• 한국세라믹학회지
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• 제33권10호
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• pp.1117-1123
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• 1996

• 한국세라믹학회지
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• 제25권6호
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• pp.645-654
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• 1988

The microstructure and electrical characteristics of ZnO-Bi2O3 ceramics containing 5mol% Bi2O3 have been studied in relation to sintering temperature and mode. The distribution and thickness of Bi2O3 intergranular layer was varied with sintering temperature and mode. Intergranular layer was more homogeneous with increasing sintering temperature, when sintering by direct heating and rapid cooling mode showed the best distribution of intergranular layer. These microstructural changes affected electrical characteristics directly, at 140$0^{\circ}C$ and C mode obtained high value of electrical resistivity and nonlinear exponent. Varistor voltage decreased with increasing sintering temperature, increased with decreasing holding time at high temperature. Barrier voltage obtained by calculation was about 1.5V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.8-11
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• 1988

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})0_3-BaTiO_3PbTiO_3(0.05{\leq}x{\leq}0.20, 0.05{\leq}y{\leq}0.15$) ternary compound ceramics were fabricated by the mixed oxide method. The dielectric properties with temperature and frequency of the specimens were investigated. Relative dielectric constants of the specimens were increased with $BaTiO_3$ contents. Increasing the $BaTiO_3$contents, the variation in the relative dielectric constant with frequency, the temperature coefficient of capacitance (TCC) and the dielectric loss were decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.284-284
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• 2007

In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.284-289
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• 2014

The effects of additives (Nb, Bi and Cr) on the microstructure, varistor properties, and aging behavior of V/Mn/Co/ La/Dy co-doped zinc oxide ceramics were systematically investigated. An analysis of the microstructure showed that all of the ceramics that were modified with various additives were composed of zinc oxide grain as the main phase, and secondary phases such as $Zn_3(VO_4)_2$, $ZnV_2O_4$, and $DyVO_4$. The $Bi_2O_3$-modified samples exhibited the lowest density, the $Nb_2O_5$-modified sample exhibited the largest average grain size, and the $Cr_2O_3$-modified samples exhibited the highest breakdown field. All additives improved the non-ohmic coefficient (${\alpha}$) by either a small or a large margin, and in particular an $Nb_2O_5$ additive noticeably increased the non-ohmic coefficient to be as large as 36. The $Bi_2O_3$-modified samples exhibited the highest stability with variation rates for the breakdown field and for the non-ohmic coefficient (${\alpha}$) of -1.2% and -26.3%, respectively, after application of a DC accelerated aging stress of 0.85 EB/$85^{\circ}C$/24 h.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
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• pp.114-114
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• 1993

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.342-342
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• 2008

The low temperature sintering and microwave dielectric properties of ceramic/glass composites which were composed of ceramics in the $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ and zinc borosilicate glass/bismuth-zinc borosilicate glass were investigated with a view to applying the microwave dielectrics to low temperature co-fired ceramics. The $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ addition of 5 wt% ZBS and BZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, pyrochlore phase was observed in the all composition. $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ with 5 wt% BZBS glasss demonstrated 70 as the dielectric constant ($\varepsilon_r$), 2,500 GHz as the Q$\times$f value, and -40 ppm/$^{\circ}C$ as TCF.

• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.835-839
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• 2004

The surge characteristics of ZnO varistors consisting of $ZnO-{Pr}_6{O}_11-CoO-{Cr}_2{O}_3-{Er}_2{O}_3$ceramics were investigated at various sintering temperatures. As sintering temperature raises, the varistor voltage was decreased from 341.2 to 223.1 V/mm, the nonlinear exponent was decreased from 64,9 to 44.1. On the other hand, the leakage current exhibited a minimum(0.64 $\mu$A) at 134$0^{\circ}C$, The clamping capability was slightly deteriorated with increasing sintering temperature. On the whole, the ZPCCE-based ZnO varistors exhibited good clamping voltage characteristics as exhibiting the clamping voltage ratio of 1.85 ∼ 1.92 approximately at surge current of 100 A.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.49-49
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• 2008

ZnO-based varistors have been widely used for voltage stabilization or transient surge suppression in electric power systems and electronic circuits. Recently, It has reported that the varistor behavior with nonlinear coefficient of 6~17 in Mn-doped ZnO. In this study we have chosen the composition of ZnO-$TeO_2-Mn_3O_4$ (ZTM) system to the purpose of whether varistor behavior appeared in doped ZnO by the solid state sintering or not. We investigated the sintering and electric properties of 0.5~3.0 at% Mn doped ZnO-1.0 at% $TeO_2$ system. Electrical properties, such as current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy were conducted. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. The average grain size of sintered samples was at about $3{\mu}m$ and decreased with increasing Mn contents. It was found that a good varistor characteristics were developed in ZTM system sintered at $1100^{\circ}C$ (nonlinear coefficient $\alpha$ ~ 60). The results of C-V characteristics such as barrier height ($\Theta$), donor density ($N_d$), depletion layer (W), and interface state density ($N_t$) in ZTM ceramics were $4\times10^{17}cm^{-3}$, 0.7 V, 40 nm, and $1.6\times10^{12}cm^{-2}$, respectively. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots in ZTM system.

• 한국재료학회지
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• 제13권10호
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• pp.645-650
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• 2003

The microstructure and electrical characteristics of $Pr_{6}$ $O_{11}$ -based ZnO varistor ceramics composed of $ZnO-Pr_{6}$ $O_{ 11}$/$-CoO-Cr_2$$O_3$-$Dy_2$$O_3$-based ceramics were investigated with $Dy_2$$O_3$content in the range of 0.0∼2.0 mol%. As $Dy_2$$O_3$content was increased, the average grain size was decreased in the range of 18.6∼4.7 $\mu\textrm{m}$ and the density of the ceramic was decreased in the range of 5.53∼4.34 g/㎤. While, the varistor voltage was increased in the range of 39.4∼436.6 V/mm and the nonlinear exponent was in the range of 4.5∼66.6 with increasing $Dy_2$$O_3$content. The addition of $Dy_2$$O_3$highly enhanced the nonlinear properties of varistors, compared with the varistor without $Dy_2$$O_3$. In particular, the varistor with $Dy_2$$O_3$ content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 66.6 and the leakage current is 1.2 $\mu\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of $(4.19∼0.33) ${\times}$10^{18}$ //㎤ and $(5.38∼1.74) ${\times}$10^{12}$ $\textrm{cm}^2$, respectively, with increasing $Dy_2$$O_3$content. The minimum dissipation factor of 0.0302 was obtained from 0.5mol% $Dy_2$$O_3$.