1 |
C.-W. Nahm and H.-S. Kim, Mater. Lett., 57, 1544 (2003)
DOI
ScienceOn
|
2 |
C.-W. Nahm and H.-S. Kim, Mater. Lett., 56, 379 (2002)
DOI
ScienceOn
|
3 |
Y.-S. Lee, K.-S. Liao and T.-Y. Tseng, J. Amer. Ceram. Soc, 79, 2379 (1996)
DOI
ScienceOn
|
4 |
C.-W. Nahm and C.-H. Park, J. Mater. Sci., 35, 3037 (2000)
DOI
ScienceOn
|
5 |
C.-W. Nahm, Mater. Lett., 47, 182 (2001)
DOI
ScienceOn
|
6 |
C.-W. Nahm, Y.-C. Jung, H.-S. Kim, J. of KIEEME (in Korean), 15, 244 (2002)
|
7 |
A. B. Alles and V. L. Burdick, J. Appl. Phys., 70, 6883 (1991)
DOI
|
8 |
C.-W. Nahm, H.-S. Kim, J. of KIEEME (in Korean), 15, 664 (2002)
|
9 |
C.-W. Nahm and B.-C. Shin, Sci.: J. Mater. Sci.: Mater. Electron., 13, 111 (2002)
DOI
ScienceOn
|
10 |
C.-W. Nahm and B.-C. Shin, Mater. Lett., 57, 1322 (2003)
DOI
ScienceOn
|
11 |
C.-W. Nahm, Mater. Lett., 57, 1317 (2003)
DOI
ScienceOn
|
12 |
T. K. Gupta, J. Amer. Ceram. Soc, 73, 1817 (1990)
DOI
|
13 |
C.-W. Nahm, J. Mater. Sci. Lett., 21, 201 (2002)
DOI
ScienceOn
|
14 |
S. Shichimiya, M. Yamaguchi, N. Furuse, M. Kobayashi and S. Ishibe, IEEE Trans. Pow. Deliv. 13, 465 (1998)
DOI
ScienceOn
|
15 |
J. C. Wurst and J. A. Nelson, J. Amer. Ceram. Soc, 55, 109 (1972)
DOI
|
16 |
K. Mukae, K. Tsuda and I. Nagasawa, J. Appl. Phys., 50, 4475 (1979)
DOI
|
17 |
L. Hozer, Semiconductor ceramics; grain boundary effects, Ellis Horwood, 21 (1994)
|
18 |
C.-W. Nahm, Y.-C. Jung, Kor. J. Mat. Res., 7, 1033 (1997)
|
19 |
L. M. Levinson and H. R. Philipp, Amer. Ceram. Soc. Bull., 65, 639 (1986)
|
20 |
A. B. Alles, R. Puskas, G. Callahan and V. L. Burdick, J. Amer. Ceram. Soc., 76, 2098 (1993)
DOI
ScienceOn
|
21 |
L. M. Levinson and H. R. Philipp, Am. Ceram. Soc. Bull., 65, 639 (1986)
|
22 |
G. D. Mahan, J. Appl. Phys., 54, 3825 (1983)
DOI
ScienceOn
|
23 |
C.-W. Nahm, H.-S. Kim, J. of KIEEME (in Korean), 15, 776 (2002)
|