• Title/Summary/Keyword: ZnO buffer

Search Result 152, Processing Time 0.033 seconds

Influence of Ag Nano-buffer Layer Thickness on the Opto-electrical Properties of AZO/Ag Transparent Electrode Films (Ag 나노완충층 두께에 따른 AZO/Ag 투명전극의 전기광학적 특성 연구)

  • Eom, Tae-Young;Song, Young-Hwan;Moon, Hyun-Joo;Kim, Dae-Hyun;Cho, Yun-Ju;Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
    • /
    • v.29 no.6
    • /
    • pp.272-276
    • /
    • 2016
  • Al doped ZnO (AZO) single layer and AZO/Ag bi-layered films were deposited on the glass substrates by radio frequency and direct current magnetron sputtering and then the effect of Ag buffer layer on the electrical and optical properties of the films was investigated. The thicknesses of AZO upper layer was kept as 100 nm, while Ag buffer layer was varied from 5 to 15 nm. The observed results mean that opto-electrical properties of the AZO films is influenced with Ag buffer layer and AZO film with 10 nm thick Ag buffer layer show the higher opto-electrical performance than that of the AZO single layer film prepared in this study.

Fabrication of a Cu2ZnSn(S,Se)4 thin film solar cell with 9.24% efficiency from a sputtered metallic precursor by using S and Se pellets

  • Gang, Myeong-Gil;Hong, Chang-U;Yun, Jae-Ho;Gwak, Ji-Hye;An, Seung-Gyu;Mun, Jong-Ha;Kim, Jin-Hyeok
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2015.08a
    • /
    • pp.86.2-86.2
    • /
    • 2015
  • Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

  • PDF

Electrogenerated Chemiluminescence Sensor Based on Tris(2,2'-bipyridyl) ruthenium(II) Immobilized in the Composite Film of Multi-walled Carbon Nanotube/Sol-gel Zinc oxide/Nafion

  • Choi, Eun-Jung;Kang, Chang-Hoon;Choi, Han-Nim;Lee, Won-Yong
    • Bulletin of the Korean Chemical Society
    • /
    • v.30 no.10
    • /
    • pp.2387-2392
    • /
    • 2009
  • A composite film of multi-walled carbon nanotube (MWCNT)/sol-gel-derived zinc oxide(ZnO)/Nafion has been utilized as an efficient immobilization matrix for the construction of a highly sensitive and stable tris(2,2'-bipyridyl) ruthenium(II) (Ru(${bpy)_3}^{2+})$ electrogenerated chemiluminescence (ECL) sensor. The electrochemical and ECL behaviors of Ru(${bpy)_3}^{2+})$ ion-exchanged into the composite film were strongly dependent upon the sol-gel preparation condition, the amount of MWCNT incorporated into the ZnO/Nafion composite film, and the buffer solution pH. The synergistic effect of MWCNTs and ZnO in the composite films increased not only the sensitivity but also the long-term stability of the ECL sensor. The present ECL sensor based on the MWCNT/ZnO/Nafion gave a linear response ($R^2$ = 0.999) for tripropylamine concentration from 500 nM to 1.0 mM with a remarkable detection limit (S/N = 3) of 15 nM. The present ECL sensor showed outstanding long-term stability (94% initial signal retained for 5 weeks). Since the present ECL sensor exhibits large response towards NADH, it could be applied as a transduction platform for the ECL biosensor in which the NADH is produced from the dehydrogenase-based enzymatic reaction in the presence of NA$D^+$ cofactor.

Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates

  • Han, Ki-Lim;Cho, Hyeon-Su;Ok, Kyung-Chul;Oh, Saeroonter;Park, Jin-Seong
    • Electronic Materials Letters
    • /
    • v.14 no.6
    • /
    • pp.749-754
    • /
    • 2018
  • Previous studies have reported on the mechanical robustness and chemical stability of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on plastic substrates both in flat and curved states. In this study, we investigate how the polyimide (PI) substrate affects hydrogen concentration in the a-IGZO layer, which subsequently influences the device performance and stability under bias-temperature-stress. Hydrogen increases the carrier concentration in the active layer, but it also electrically deactivates intrinsic defects depending on its concentration. The influence of hydrogen varies between the TFTs fabricated on a glass substrate to those on a PI substrate. Hydrogen concentration is 5% lower in devices on a PI substrate after annealing, which increases the hysteresis characteristics from 0.22 to 0.55 V and also the threshold voltage shift under positive bias temperature stress by 2 ${\times}$ compared to the devices on a glass substrate. Hence, the analysis and control of hydrogen flux is crucial to maintaining good device performance and stability of a-IGZO TFTs.

Simple fabrication route for vertically-aligned CZTS nanorod arrays for photoelectrochemical application based on AAO template

  • Kim, Ji-Min;Yang, U-Seok;O, Yun-Jeong;Mun, Ju-Ho
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.402.2-402.2
    • /
    • 2016
  • In photoelectrochemical (PEC) water splitting, Cu2ZnSnS4 (CZTS) compound has attracted intense attention as a photocathode due to not only large optical absorption coefficient, but also earth-abundance of constituent elements and suitable band alignment. With rapid development of nanotechnology, one-dimensional nanostructures of CZTS have been investigated as a potential form to achieve high efficiency because the nanostructures are expected to be capable of capturing more light and enhancing charge separation and transport. Here, we report a well-controlled fabrication route for vertically-aligned CZTS nanorod arrays on anodic aluminium oxide (AAO) template via simple sol-gel process followed by deposition of ZnS or CdS buffer layers on the CZTS nanorod to enhance charge separation. The structure, morphology, composition, optical absorption, and PEC properties of the resulting CZTS nanorod samples were characterized using X-ray diffraction, Raman spectroscopy, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and UV-vis spectroscopy.

  • PDF

The Influence of Al Underlayer on the Optical and Electrical Properties of GZO/Al Thin Films

  • Kim, Sun-Kyung;Kim, So-Young;Kim, Seung-Hong;Jeon, Jae-Hyun;Gong, Tae-Kyung;Kim, Daeil;Choi, Dong-Hyuk;Son, Dong-Il
    • Transactions on Electrical and Electronic Materials
    • /
    • v.14 no.6
    • /
    • pp.321-323
    • /
    • 2013
  • 100 nm thick Ga doped ZnO (GZO) thin films were deposited with DC and RF magnetron sputtering at room temperature on glass substrate and Al coated glass substrate, respectively. and the effect of the Al underlayer on the optical and electrical properties of the GZO films was investigated. As-deposited GZO single layer films had an optical transmittance of 80% in the visible wavelength region, and sheet resistance of 1,516 ${\Omega}/{\Box}$, while the optical and electrical properties of GZO/Al bi-layered films were influenced by the thickness of the Al buffer layer. GZO films with 2 nm thick Al film show a lower sheet resistance of 990 ${\Omega}/{\Box}$, and an optical transmittance of 78%. Based on the figure of merit (FOM), it can be concluded that the thin Al buffer layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

Properties of Extracellular Cytosine Deaminase from Arthrobacter sp. JH-13 (Arthrobacter sp.JH-13이 생산하는 세포외 Cytosine Deaminase의 성질)

  • Yeeh, Yeehn;Park, Jeong-Hae;Jun, Hong-Ki
    • Korean Journal of Microbiology
    • /
    • v.23 no.3
    • /
    • pp.177-183
    • /
    • 1985
  • Some properties of an extracellular cytosine deaminase produced from Arthrobacter sp.JH-13 were examined after 20-80% of ammonium sulfate fractionation. Among some substrates, this enzyme utilized cytosine and 5-fluorocytosine as a substrate. The optimum pH and temperature for the activity of this enzyme were found to be near 8.0 and $40^{\circ}C$, respectively. The ensyme was more stable in 0.2M of Tris-HCl buffer than 0.2M of potassium phosphate buffer. The enzyme was generally stable below $50^{\circ}C$, but inactivated completely at $70^{\circ}C$. 1mM of $Fe^{3+},\;K^+\;and\;Na^+$ increased the enzyme activity, but 0.01mM of $Co^{2+},\;Cu^{2+},\;Ni^{2+},\;Hg^{2+},\;Ag^{2+},\;Zn^{2+},\;Ba^{2+},\;and\;Mg^{2+}$ markedly inactivated the enzyme activity. 0.1mM of p-chloromercuribenzoate, trichloroacetic acid, and N-ethylmaleimide compleyely inhibited the enzyme activity, but 0.1mM of 2-mercaptoethanol slightly increased the enzyme activity.

  • PDF