• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.808-814
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• 2001

The electrical properties and stabiltiy of Pr$_{6}$O$_{11}$ -based ZnO varistors, which are composed of ZnO-Pr$_{6}$O$_{11}$-Cr$_{2}$O$_{3}$-Er$_{2}$O$_{3}$ based ceramics, were investigated in the Er$_{2}$O$_{3}$ content range of 0.5 to 2.0 mol%. As Er$_{2}$O$_{3}$content is increased up to approximaterly 1.0mol%, the nonlinearity was decreased. Increasing Er$_{2}$O$_{3}$ content further caused the nonlinearity to increase. The varistors with 2.0 mol% Er$_{2}$O$_{3}$ exhibited a high nonlinearity, in which the nonlinear exponent is 47.41 and the leakage current is 1.82 $\mu$A. Furthermore, they showed a very excellent stability, in which the variation rates of the varistor voltage, the nonlinear exponent, and leakage current are -0.52%, -4.09%, and 152.75%, respectively, under DC accelerated aging stress, such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12h).2h).TEX>/12h).2h).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.74-80
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• 2017

This study focuses on the effects of doping $Zn_2BiVO_6$ and $Co_3O_4$ on the sintering and electrical properties of ZnO; where, ZZ consists of 0.5 mol% $Zn_2BiVO_6$ in ZnO, and ZZCo consists of 1/3 mol% $Co_3O_4$ in ZZ. As ZnO was sintered at about $800^{\circ}C$, the liquid phases, which are composed of $Zn_2BiVO_6$ and $Zn_2BiVO_6$-rich phases, were found to be segregated at the grain boundaries of sintered ZZ and ZZCo, respectively, which demonstrates that $V_o^{\cdot}$(0.33~0.36 eV) are formed as dominant defects according to the analysis of admittance spectroscopy. As $Co_3O_4$ is doped to ZZ, the resistivity of ZnO decreases to ~38%, while donor density ($N_d$), interface state density ($N_t$), and barrier height (${\Phi}_b$) increase twice higher than those of ZZ, according to C-V characteristics. This result harbingers that ZZCo and its derivative compositions will open the gate for ZnO to be applied as more progressive varistors in the future, as well as the advantageous opportunity of manufacturing ZnO chip varistors at lower sintering temperatures below $900^{\circ}C$.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.586-591
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• 2019

This study describes the doping effect of $Yb_2O_3$ on microstructure, electrical and dielectric properties of $ZnO-V_2O_5-MnO_2-Nb_2O_5$ (ZVMN) ceramic semiconductors sintered at a temperature as low as $900^{\circ}C$. As the doping content of $Yb_2O_3$ increases, the ceramic density slightly increases from 5.50 to $5.54g/cm^3$; also, the average ZnO grain size is in the range of $5.3-5.6{\mu}m$. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of $Yb_2O_3$ is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% $Yb_2O_3$ reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of $2.46-7.41{\times}10^{17}cm^{-3}$ with increasing doping content of $Yb_2O_3$ and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of $Yb_2O_3$ reaches 0.1 mol%, whereas further doping increases it. The value of $tan{\delta}$ increases from 0.209 to 0.268 with the doping content of $Yb_2O_3$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.581-584
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• 2000

This paper describes the effect of lightning impulse current on ZnO varistors(390 V, 6.5 kA) used in low-voltage AC mains as a protective device against transient overvoltages. A lightning impulse current standardized in IEC 61000-4-5 is applied to the varistors, and the energy applied to the varistor at each time is about 12 J. In the experiment, various Parameters such as leakage current, reference voltage are measured with the number of applied impulse current. Also, micro-structure changes of the varistors after applying the lightning impulse current of 200 times are compared. The electrical characteristics of the varistors are degraded by overtime impulse current, showing increase in leakage current and decrease in reference voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.101-104
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• 1989

Thermal Electet of the Zinc Oxide varistor has been studied in the temperature range of -130~200[$^{\circ}C$] and the electric field of 6[kV/m]. It appears that there are four peaks of thermally stimulated current; $\alpha$, $\beta$, ${\gamma}$ and $\delta$ spectra appearing at the temperature range of 160, 130, 20 and -30[$^{\circ}C$], respectively. It seems that the origin of $\alpha$, $\beta$, ${\gamma}$ and $\delta$ peaks are associated with the depolarization of donor ions in the depletion layer, the detrapping of trapped electron in the surface, the detrapping of trapped electron in the donor level and the detrapping of trapped electron between grain and intergranular, respectively.

• Fire Science and Engineering
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• v.10 no.4
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• pp.3-12
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• 1996

The aim of the present study is to find out the effect of cooling rate on the electrical behavior of ZnO varistors. The microstructure, 1-V characteristics and complex impedance spectra were investigated under the change of cooling rates. It is found that at cooling rate $200^{\circ}$/h, nonlinearity and breakdown voltage reached a maximum value which may show that good intergranular layer is formed as a results of proper cooling rate. Complex Impedance spectras were measured as a function of frequency range 100Hz to 13MHz to determine grain and grainboundary resistance. The semicircles were attributed to the dependence of grain and grainboundary resistance on cooling rates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1085-1091
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• 2006

The microstructure, electrical properties, and its stability of (Pr, Co, Cr, La)-doped ZnO varistors were investigated at different sintering temperatures in the range of $1230{\sim}1300^{\circ}C$. As the sintering temperature increased, the sintered density increased from 5.50 to $5.77g/cm^3$, the varistor voltage decreased from 777.9 to 108.0 V/mm, the nonlinear coefficient decreased from 77.0 to 7.1, and the leakage current increased from $0.4{\mu}A\;to\;50.6{\mu}A$. On the other hand, the donor concentration increased from $0.90{\times}10^{18}\;to\;2.59{\times}10^{18}/cm^3$ and the barrier height decreased from 1.89 to 0.69 eV with increasing temperature. The stability of nonlinear electrical properties was obtained from sintering temperature of $1260^{\circ}C$. The varistors sintered at $1260^{\circ}C$ marked the high electrical stability, with $%{\Delta}V_{1mA}=+1.9%,\;%{\Delta}a=10.6%,\;and\;%{\Delta}I_L=+20%$ for DC accelerated aging stress state of $0.95V_{1mA}/150^{\circ}C/24h$.

• Electrical & Electronic Materials
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• v.6 no.1
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• pp.69-79
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• 1993

ZnO 바리스터는 전기전자 장치에 비이상적인 써어지 혹은 잡음신호가 침입하는 것을 막기위해서 폭넓게 사용되고 잇다. 많은 연구자들은 저전압 바리스터를 제조하기 위해서 요러가지 방법을 제시하였다. 그렇지만 그러한 방법들은 6V이하의 동작 전압을 갖는 바리스터를 제조하기는 어렵다. 본 연구에서는 새로운 3-성분 종입자법으로 제조한 바리스터의 전도특성을 보고하고자 한다. 온도범위 20-150.deg.C 및 전류 범위 $10^{-8}$~$10^{-1}$A/$cm^{2}$에서 관찰된 바리스터의 전도특성은 측정전류가 증가함에 따라서 다른 기구를 갖는 3개의 영역으로 구분되었다. 측정전류가 $10^{-3}$ A/$cm^{2}$이하인 경우에 오옴전도 혹은 누설전류 영역으로 해석 할 수 있었다. 측정 전류가 $10^{-3}$ A/$cm^{2}$ 부근에서는 이중 쇼트키 장벽에 의한 전도로 해석할 수 있었으며 또한 $10^{-3}$ A/$cm^{2}$ 이상의 전류 영역에서는 턴넬 전도 전류로 해석 할 수 있었다. 이상의 결과로 부터 3-성분 종입자법으로 저전압 바리스터를 제조하는 방법은 지금까지 보고된 어느 다른 방법보다도 우수하며 그 전도기구를 제시하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1061-1066
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• 2006

This paper presents the electrical characteristics with manufacturing process and performance evaluation of high performance zinc oxide varistors. ZnO varistors were fabricated with typical ceramic production methods with different thickness and the structural and electrical characteristics of ZnO varistors were investigated. All varistors exhibited high density, which was in the range of $5.41{\sim}5.49g/cm^3$. In the electrical properties, the reference voltage increased in the range of $4.410{\sim}5.250kV$ with increasing their thickness and the residual voltage exhibited the same trends as the reference voltage. In the long duration current impulse withstand test, E-2 and F-1 samples failed at the two and four shots of impulse current, respectively, but E-1 and F-2 samples survived 18 shots during the test. Before and after this test, the variation ratio of residual voltage of E-1 and F-2 samples were -0.34 % and 0.05 %, respectively, which were in the acceptance range of 5 %. According to the results of tests, it is thought that if the fabrication process such as insulating coating, sintering condition, and soldering method is improved, these ZnO varistors would be possible to apply to the station class arresters in the near future.

• Proceedings of the KIEE Conference
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• 2003.11a
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• pp.174-177
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• 2003

Kinds of most frequent faults happened on overhead distribution system are the single line-to-ground fault, the line-to-line fault and the two line-to-ground fault. Occasionally, the three line-to-ground fault and the disconnection of a wire are happened in severe conditions. In this study, the single line-to-ground fault, the line-to-line fault, two line-to-ground fault on three-phase four-wire overhead distribution system were experimentally simulated and characteristics of total leakage current of distribution arrester caused by these faults were investigated. Also, the changing aspect of total leakage current of distribution arrester caused by voltage variation was investigated. In a consequence, abnormal voltages caused by voltage variation, the line-to-line fault, the two line-to-ground fault have a little effect on total leakage current of ZnO arrester. But abnormal voltages caused by the single line-to-ground fault have an important effect on total leakage current of ZnO arrester.