• Korean Journal of Materials Research
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• v.14 no.3
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• pp.224-228
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• 2004

Respectively the powder made of ZnO added $SnO_2$ was prepared by coprecipitation method and the thick film gas sensor was fabricated by screen-printing technique, The morphology and phase of the powder and film was investigated by SEM and XRD. The specific area of the particle was linearly increased with ZnO contents. Target gas was di(propylene glycol) methylether ($CH_3$($OC_3$$H_{6}$ )$_2$OH, DPGME), which is simulant gas of blister gas. The gas sensing characteristics for DPGME were examined with flow type measurement system and the concentrations of target gas were controlled from 500 ppb to 1500 ppb. ZnO (2 wt%) added $SnO_2$ showed maximum sensitivity to DPGME at $300^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.6 no.6
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• pp.451-457
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• 1997

The thick films of oxide semiconductors such as $WO_{3}$, $SnO_{2}$ and ZnO for the $NO_{2}$ detection of sub-ppm range have been prepared and their characteristics were investigated. It is showed that the optimum operating temperatures of the sensors are $300^{\circ}C$ and $220{\sim}260^{\circ}C$ for $WO_{3}$-based and $SnO_{2}$-based thick films, and ZnO-based thick films, respectively. Since the resistance of ZnO-based thick films are extremely high($>10^{6}{\Omega}$), the signal to noise ratio was comparatively low. In order to determine the selectivity, the films are exposed to the interfering gases such as ozone, ammonia, methane and the mixture of carbon monoxide and propane. $WO_{3}$-ZnO(3 wt.%) and $SnO_{2}-WO_{3}$(3 wt.%) thick film sensors show high sensitivity, good selectivity, excellent reproducibility and the linearity of $NO_{2}$ concentration versus sensor resistance. The preliminary results clearly demonstrated that the sensor can be successfully applied for the detection of $NO_{2}$ in sub-ppm range.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3723-3729
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• 2010

We investigated the high-excitation voltage cathodoluminescence (CL) performance of blue light-emitting (ZnS:Ag,Al,Cl) and green light-emitting (ZnS:Cu,Al) phosphors coated with metal oxides ($SiO_2$, $Al_2O_3$, and MgO). Hydrolysis of the metal oxide precursors tetraethoxysilane, aluminum isopropoxide, and magnesium nitrate, with subsequent heat annealing at $400^{\circ}C$, produced $SiO_2$ nanoparticles, an $Al_2O_3$ thin film, and MgO scale-type film, respectively, on the surface of the phosphors. Effects of the phosphor surface coatings on CL intensities and aging behavior of the phosphors were assessed using an accelerating voltage of 12 kV. The MgO thick film coverage exhibited less reduction in initial CL intensity and was most effective in improving aging degradation. Phosphors treated with a low concentration of magnesium nitrate maintained their initial CL intensities without aging degradation for 2000 s. In contrast, the $SiO_2$ and the $Al_2O_3$ coverages were ineffective in improving aging degradation.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.418-424
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• 2008

The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.

• Journal of IKEEE
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• v.24 no.2
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• pp.435-440
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• 2020

ZnO:Al films with about 500 nm thick were prepared by RF magnetron sputtering. The ZnO:Al films were annealed at 100 ℃, 200 ℃, 300 ℃, and 400 ℃ for 10 h, respectively. The resistivity, carrier concentration, and mobility variation of ZnO:Al films with heat treatments were measured. The causes of the resistivity variation of ZnO:Al films with heat treatments were investigated by utilizing the results of x-ray diffraction and field emission scanning electron microscope. The energy band gap, Urbach energy, and refractive index were obtained from the transmittance of ZnO:Al films. The change in electrical properties of the ZnO:Al film was explained in relation to the optical properties.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.394-401
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• 2009

This paper reports the structural and optical properties of ZnO/glass thin films grown by radio-frequency magnetron sputtering with a powder target. In contrast to ZnO ceramic target typically used, a ZnO raw powder target was sputtered in this study. ZnO grew with the (0002) preferred orientation along the surface normal direction. Initially, the surface of ZnO thin films was flat considerably and then it became rougher as the thickness increased. The optical transmittance was as high as 88% in the range of 400-1000 nm. The bandgap energy of 3.23 eV at the 220 nm thick sample was estimated.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.106-109
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• 2022

The green-emitting Zn₂SiO₄:Mn²⁺ phosphor film was evaluated in a xenon excimer lamp. The phosphor film with 2 ㎛ thick was formed of monolithic structure on the inner side of quartz through a long-time annealing process of coated ZnO solution doped with Mn²⁺ ion and SiO₂ of quartz tube. The coated quartz was filled with 100 torr of xenon gas, and simultaneously both sides was melt and sealed. The xenon-field quartz tube was discharge by applying the voltage of 15 kV with a frequency of 26 kHz, and emitted the glow with dominant peak at 172 nm. The vacuum ultraviolet excited the inner-side coated Zn₂SiO₄:Mn²⁺ phosphor film, which emitted the pure and strong green light.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.527-530
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• 2009

We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20 nm-thick $Al_2O_3$ for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at $200^{\circ}C$. Whether top or bottom gate is biased for sweep, our TFT almost symmetrically operates under a low voltage of 5 V showing a field mobility of ~0.4 $cm^2/V{\cdot}s$ along with the on/off ratio of $5{\times}10^4$. The threshold voltage of our DG TFT was systematically controlled from 0.5 to 2.0 V by varying counter gate input from +5 to -2 V.

• Korean Journal of Materials Research
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• v.24 no.8
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• pp.413-416
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• 2014

The effects of an addition of CNT on the sensing properties of nano ZnO:CNT-based gas sensors were studied for $H_2S$ gas. The nano ZnO sensing materials were grown by a hydrothermal reaction method. The nano ZnO:CNT was prepared by ball-milling method. The weight range of the CNT addition on the ZnO surface was from 0 to 10%. The nano ZnO:CNT gas sensors were fabricated by a screen-printing method on alumina substrates. The structural and morphological properties of the ZnO:CNT sensing materials were investigated by XRD, EDS, and SEM. The XRD patterns revealed that nano ZnO:CNT powders with a wurtzite structure were grown with (1 0 0), (0 0 2), and (1 0 1) dominant peaks. The size of the ZnO was about 210 nm, as confirmed by SEM images. The sensitivity of the nano ZnO:CNT-based sensors was measured for 5 ppm of $H_2S$ gas at room temperature by comparing the resistance in air with that in target gases.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.301-307
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• 2017

The purpose of this study is to investigate the electrical properties of thick-film resistor (TFR) prepared from $CaO-ZnO-B_2O_3-Al_2O_3-SiO_2$ (CZBAS) glass containing $RuO_2$ particles. $RuO_2$-glass composite powder was made by mixing and melting oxide powders of constituents. For comparison, $RuO_2$ powder was simply mixed with glass powder. $RuO_2$-40wt% glass composite and mixture were dispersed in an organic binder to obtain printable resistor paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C/min$ in an ambient atmosphere. $RuO_2$-glass composite sample showed much higher resistance compared to the simple mixed sample. This could be attributed to the difference in conducting mechanism. After sintering at $850^{\circ}C$, temperature coefficient of resistance of composite sample was lower than that of simple-mixed sample. TFR with dense and homogeneous microstructure could be obtained by using $RuO_2$-glass composite powder.