• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.325-327
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• 2011

In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a $SiO_2/Si$ substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.136-137
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• 2007

In this study, a single ZnO nanowire - CdTe nanoparticle nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of ZnO nanowire-based field effect transistor (FET) devices with CdTe nanoparticles embedded in the $Al_2O_3$ gate materials and without the CdTe nanoparticles.

• Progress in Superconductivity
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• v.13 no.2
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• pp.90-96
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• 2011

We investigated the properties of artificial pinning centers of YBCO multilayer films in which $Y_2O_3$ and ZnO nanoparticles are uniformly introduced by using the pulsed laser deposition (PLD) technique. $Y_2O_3$ and ZnO nanoparticles were deposited on top of YBCO buffer layer and the density of nanoparticles was controlled by varying the number of nanoparticle layers. YBCO superconducting layers with total thickness of 250 nm were deposited on top of $Y_2O_3$ and ZnO nanoparticles. Based on analyses of the surface morphology, the transition temperature $T_c$, and the critical current density $J_c$, we discussed the difference between the two kinds of nanoparticles as flux pinning centers.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.1
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• pp.105-108
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• 2011

Newly-developed fabrication of a p-n heterojunction diode constructed with a p-Si nanowire (NW) and an n-ZnO nanoparticle (NP) thin-film by the dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 Vp-p at the input frequency of 1 MHz, the most efficient assembly of the n-ZnO NPs is shown for the fabrication of the p-n heterojunction diode with a p-Si NW. The p-n heterojunction diode fabricated in this study represents current rectifying characteristics with the turn on voltage of 1.1 V. The diode can be applied to the fabrication of optoelectrical devices such as photodetectors, light-emitting diodes (LEDs), or solar cells based on the high conductivity of the NW and the high surface to volume ratio of the NP thin film.

• Journal of Sensor Science and Technology
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• v.31 no.2
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• pp.125-130
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• 2022

We describe the importance of zinc oxide nanoparticle (ZnO NP) concentration in the enhancement of electrical properties in a lead sulfide quantum dot (PbS QD)-based shortwave infrared (SWIR) photodetector. ZnO NPs were synthesized using the sol-gel method. The concentration of the ZnO NPs was controlled as 20, 30 and 40 mg/mL in this study. Note that the ZnO NPs layer is commonly used as an electron transport layer in PbS QDs SWIR photodetectors. The photo-to-dark ratio, which is an important parameter of a photodetector, was intensively examined to evaluate the electrical performance. The 20 mg/mL condition of ZnO NPs exhibited the highest photo-to-dark ratio value of 5 at -1 V, compared with 1.8 and 0.4 for 30 mg/mL and 40 mg/mL, respectively. This resulted because the electron mobility decreased when the concentration of ZnO NPs was higher than the optimized value. Based on our results, the concentration of ZnO NPs was observed to play an important role in the electrical performance of the PbS QDs SWIR photodetector.

• Journal of the Korean Magnetics Society
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• v.24 no.3
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• pp.81-85
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• 2014

Nano-sized Ba-ferrite, Ni-Zn ferrite and $BaFe_{12}O_{19}/Ni_{0.5}Zn_{0.5}Fe_2O_4$ nanocomposite ferrite were prepared by sol-gel combustion method. Nanocomposite was calcined at temperature range of $600{\sim}900^{\circ}C$ for 1 h. According to the diffraction patterns, hard/soft nanocomposite was indicated to the coexistence of the magnetoplumbite structural $BaFe_{12}O_{19}$ and spinel $Ni_{0.5}Zn_{0.5}Fe_2O_4$ and agree with the standard data (JCPDS 10-0325). The particle size of nanocomposite turn out to be less than 90 nm. The nanocomposite ferrite shows a single-phase magnetization behavior, implying that the hard magnetic phase and soft magnetic phase were well exchange-coupled. The specific saturation magnetization ($M_s$) of the nanocomposite is located between hard ($BaFe_{12}O_{19}$) and soft ferrite ($Ni_{0.5}Zn_{0.5}Fe_2O_4$). The remanence (Mr) of nanocomposite ferrite is much higher than that for the individual $BaFe_{12}O_{19}$ and $Ni_{0.5}Zn_{0.5}Fe_2O_4$ ferrite. $(BH)_{max}$ is increased, generally.

• Journal of Sensor Science and Technology
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• v.26 no.3
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• pp.204-208
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• 2017

Highly uniform and well-dispersed Zeolitic Imidazolate Framework-7 (ZIF-7) particles were prepared by the precipitation of $Zn^{2+}$ using benzimidazole, which were converted into ZnO nanoparticles by heat treatment at $500^{\circ}C$ for 24 h. The ZIF-7 derived ZnO nanoparticles showed abundant mesopores, high surface area, and good dispersion. The gas sensing characteristics toward 5 ppm acetone, ethanol, trimethylamine, ammonia, p-xylene, toluene, benzene, and carbon monoxide and carbon dioxide were investigated at $350-450^{\circ}C$. ZIF-7 derived ZnO nanoparticles exhibited high response to 5 ppm acetone ($R_a/R_g=57.6$; $R_a$: resistance under exposure to the air, Rg: resistance under exposure to the gas) at $450^{\circ}C$ and negligible cross-responses to other interference gases (trimethylamine, ammonia, p-xylene, toluene, benzene, carbon monoxide, carbon dioxide) and relatively low responses to ethanol. ZIF derived synthesis of metal oxide nanoparticles can be used to design high performance acetone sensors.

• Korean Journal of Materials Research
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• v.20 no.9
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• pp.483-487
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• 2010

To fabricate $TiO_2$ nanoparticle-based dye sensitized solar cells (DSSCs) at a low-temperature, DSSCs were fabricated using hydropolymer and ZnO nanoparticles composites for the electron transport layer around a low-temperature ($200^{\circ}C$). ZnO nanoparticle with 20 nm and 60 nm diameter were used and Pt was deposited as a counter electrode on ITO/glass using an RF magnetron sputtering. We investigate the effect of ZnO nanoparticle concentration in hydropolymer and ZnO nanoparticle solution on the photoconversion performance of the low temperature fabricated ($200^{\circ}C$) DSSCs. Using cis-bis(isothiocyanato)bis(2,20 bipyridy1-4,40 dicarboxylato) ruthenium (II) bis-tetrabutylammonium (N719) dye as a sensitizer, the corresponding device performance and photo-physical characteristics are investigated through conventional physical characterization techniques. The effect of thickness of the ZnO photoelectrode and the morphology of the ZnO nanoparticles with the variations of hydropolymer to ZnO ratio on the photoconversion performance are also investigated. The morphology of the ZnO layer after sintering was examined using a field emission scanning electron microscope (FE-SEM). 60 nm ZnO nanoparticle DSSCs showed an incident photon-to-current conversion efficiency (IPCE) value of about 7% higher than that of 20 nm ZnO nanoparticle DSSCs. The maximum parameters of the short circuit current density ($J_{sc}$), the open circuit potential ($V_{oc}$), fill factor (ff), and efficiency ($\eta$) in the 60 nm ZnO nanoparticle-based DSSC devices were 4.93 mA/$cm^2$, 0.56V, 0.40, and 1.12%, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.6
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• pp.238-244
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• 2007

Nano-sized ZnO crystals were successfully incorporated using ion exchange method in TMA-A zeolite synthesized by the hydrothermal method. The optimal composition for the synthesis of TMA-A zeolite was resulted in a solution of $Al(i-pro)_3$:2.2 TEOS:2.4 TMAOH:0.3 NaOH:200 $H_2O$. 0.3g of TMA-A zeolite and 5mol of $ZnCl_2$ solution were employed for the preparation of ZnO incorporated TMA-A zeolite. The ZnO incorporated TMA-A zeolite precursors, prepared from the process of mixing, stirring, centrifugal separation and drying, were calcined at temperatures from 400 to $600^{\circ}C$ for 3 h. The crystallization process of ZnO incorporated TMA-A zeolite was analyzed by X-ray diffraction (XRD). The Brunaur-Emett-Teller (BET) surface area of the ZnO incorporated TMA-A zeolite was measured. Subsequently, the morphology and the particle size depending on the temperature and time were observed using scanning electron microscopy(SEM), transmission electron microscopy(TEM) and particle size analyzer.

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.135-135
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• 2005