• Korean Journal of Materials Research
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• v.8 no.8
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• pp.672-677
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• 1998

The following work examines the growth rate and microstructure of the $AI_2O_3$-composite formation by melt oxdation of pentad AI-alloys. The I weight % of each metal elements Cu and Ni were added to AI-IMg-3Si-3Zn and AI-IMg- 3Si-5Zn alloys. The diffenent pentad AI-alloys were oxidized 20 hours long at 1373K and 1473K. The oxidation rates were determined by observing the weight gain. The macro- and microstructure of formed oxide layer were examined by optical microscopy. The AI-IMg-3Si-5Zn-lCu alloy revealed the best oxidation behavior, but formedoxide layer was inhomogeneous.The oxidation rate were accelerated, and the uniform growth of the oxide layer with fine microstructure were obtained by putting a thin layer of $SiO_2$ on the surface of the alloy.

• Korean Journal of Materials Research
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• v.7 no.8
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• pp.660-667
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• 1997

AI-Mg-합금의 용융산화에 의해 생성되는 AlO$_{2}$O$_{3}$-복합재료의 미세구조에 미치는 합금원소의 영향을 연구하였다. AI-1Mg 합금과 AI-3Mg 합금을 기본으로하여 Si, Zn, Sn, Cu, Ni, Ca, Ce를 1, 3, 5 %를 무게비로 첨가하였다. 각 합금을 1473K에서 20시간 유지하여 산화시킨 후 산화층의 거시적 형상과 미세구조를 광학현미경으로 관찰하였다. 각 미세구조의 상분율을 상분석기로 측정하였다. 산화층의 최첨단면은 SEM과 EDX로 관찰하고 분석하였다. Cu나 Ni를 첨가한 합금으로부터 성장한 산화층의 미세구조가 가장 치밀하였다. Zn이 포함된 합금으로부터 성장한 산화층 최첨단 성장면에는 ZnO가 관찰되었다. Zn이 포함되지 않은 다른 합금의 성장 전면에는 항상 MgAi$_{2}$O$_{4}$상이 관찰되었다.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.33-38
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• 1997

The green emitting phosphors of the Field Emission Display(FED), Al codoped ZnGa$_{2}$O$_{4}$:Mn, were synthesized and sintered at high temperature. From X-ray diffraction measurements, it was confirmed that poly crystalline ZnGa$_{2}$O$_{4}$ and ZnAI$_{2}$O$_{4}$ solid solution coexist in Al codoped ZnGa$_{2}$O$_{4}$:Mn. Photoluminescence spectra of Al codoped ZnGa$_{2}$O$_{4}$:Mn show that the main peak position is shifted from 504 nm to 513 nm with the increase of Al concentration. The brightness was improved with the amount of Al dopant. It showed the maximum value at the doping level of 0.03 mole and then, it degraded rapidly. These results are due to the superposition of emission from . ZnGa$_{2}$O$_{4}$:Mn and ZnAI$_{2}$O$_{4}$:Mn.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.10a
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• pp.177-179
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• 2009

In order to investigate the possible application of ZnO films as a transparent conducting oxide (TCO) electrode, ZnO:Al films were prepared by RF magnetron sputtering method. The effects of surface treatment and doping concentration on the structural and electrical properties of ZnO films were mainly studied experimentally. Five-inch PDP cells using either a ZnO:Al or indium tin oxide (ITO) electrode were also fabricated separately under the same manufacturing conditions. The luminous properties of both the transparent conducting oxide electrode were measured and compared with each other. By doping the ZnO target with 2 wt% of Al2O3, the film deposited at a chemical surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. And DBD surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. Although the luminance and luminous efficiency of the transparent conducting oxide electrode using ZnO:AI are lower than those of the cell with the ITO electrode by about 10%, these values are sufficient enough to be considered for the normal operation of TCO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.242-248
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• 2008

The structural, optical and electrical properties of ZnO films doped with 1.5 at% of 3A materials(B, Al, Ga, In) were studied by sol-gel process. The films were found to be c-axis (002) oriented hexagonal structure on glass substrate, when post heated at 500 $^{\circ}C$. The surface of the films showed a uniform and nano size microstructure and the crystalline size of doped films decreased. The lattice constants of ZnO:B/Al/Ga increased than that of ZnO, while ZnO:In decreased. All the films were highly transparent(above 90 %) in the visible region. The energy gaps of ZnO:B/Al/Ga were increased a little, but that of ZnO:In was not changed. The resistivities of ZnO:Al/Ga/In were less than 0.1 $\Omega$cm. All the films showed a semiconductor properties in the light or temperature, however ZnO:In was less sensitive to it. A figure of merit of ZnO:In had the highest value of 0.025 $\Omega^{-1}$ in all samples.

• Solar Energy
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• v.19 no.1
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• pp.29-36
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• 1999

ZnO/n-Si junctions were fabricated by spin coating with ZnO precursor produced by the sol-gel process. In order to increase the electrical conductivity of ZnO films, the films were n-doped with Al impurity and subsequently annealed at about $450^{\circ}C$ under reducing environments. The ohmic contacts between n-Si and AI for a bottom electrode were successfully fabricated by doping the rear surface of Si substrate with phosphorous atoms. The front surface of the substrate was also doped with phosphorous atoms for improving the efficiency of the solar cells. Consequently, conversion efficiencies ranging up to about 5.3% were obtained. These efficiencies were found to decrease slowly with time because of the oxide films formed at the ZnO/Si interface upon oxygen penetration through the porous ZnO. Oxygen barrier layers could be necessary in order to prevent the reduction of conversion efficiencies.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1710-1712
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• 1999

암모니아가스에 민감한 In이 도핑된 ZnO(ZnO:In) 박막을 In 박막$(100{\AA})$ 및 ZnO박막$(3000{\AA})$의 연속적인 증착과 열처리공정을 통하여 제조하고, 이와 같은 방법으로 Al과 In이 도핑된 ZnO (ZnO:Al, In) 박막을 In 박막과 ZnO:Al 박막의 연속적인 증착과 같은 조건에서의 열처리를 통하여 제조하였다. 기판은 $1000{\AA}$의 산화막이 열적으로 성장되어 있는 Si 기판을 사용하였다. In/ZnO 및 In/ZnO:Al 박막 이중층의 열처리온도에 따른 구조적 및 전기적 특성을 x-선회절기, 주사전자현미경, 오제전자분광법 및 4점측정시스템을 통하여 조사하였다. 이들 막에 대하여 열처리온도에 따른 암모니아가스에 대한 감도, 선택성 및 시간응답특성을 구하였다. 열처리온도 $400^{\circ}C$, 동작온도 $300^{\circ}C$에서 100 ppm의 암모니아가스를 주입한 결과 140 %의 최대감도를 나타내었으며 CO, $NO_x$ 가스에 대한 감도는 아주 낮은 것으로 나타났다.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.256-262
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• 1998

산소이온전도체 13mol% CaO안정화 $ZrO_{2}$에 대한 $AI_{2}$$O_{3}$의 첨가효과를 살펴보기 위해 출발원료분말을 ($Zr_{0.87}$ $Ca_{0.13}$ O$1.87_{1-x}$ $AI_{2}$$O_{3}$)x,(x=0,0.01,0.02,0.03,0.05)와 같은 조성이 되도록 공침법으로 합성하고 $1400^{\circ}C$에서 소결시켜, $AI_{2}$$O_{3}$의 첨가에 따른 /grain size의 변화, $AI_{2}$$O_{3}$의 형태 및 존재위치, 소결밀도의 변화, 그리고 저항률의 변화를 살펴보았다. 그 결과, 결정립의 크기는 1mol% A $I_{2}$$O_{3}$첨가까지는 증가하였고, 2mol%첨가이상에서는 입계로 석출하기 시작한 $AI_{2}$$O_{3}$의 pinning효과에 기인되어 감소하였다. 또 1mol% $AI_{2}$$O_{3}$첨가시에 격자상수값의 급격한 감소가 보여지고, 그 이상에서는 변화가 별로 없어 13mol%CaO안정화 $ZnO_{2}$의 고용도한은 최대 1mol%임을 알 수 있었다. 전기전도도 또한 1mol% $AI_{2}$$O_{3}$첨가시에 증가됨을 나타냈다. $ZrO_{2}$에의 고용도한까지의 $AI_{2}$$O_{3}$첨가는 결정립성장을 촉진시키며 밀도값의 증대를 가져오고 전기전도도의 증가를 가져오는 긍정적인 효과를 나타냈다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.88-92
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• 2003

In this paper, the characteristics of the ZnO films deposited on AI bottom electrode and the temperature effects on the ZnO film growth are presented along with the fabrication and their evaluation of the film bulk acoustic wave resonator (FBAR) devices. All the films used in this work were deposited using a radio-frequency (RF) magnetron sputtering technique. Growth characteristics of the ZnO films are shown to have a strong dependence on the deposition temperatures ranged from room temperature to 35$0^{\circ}C$ regardless of the RF power applied for sputtering the ZnO target. In addition, according to the growth characteristics of the distinguishably different micro-crystal structures and the degree of the c-axis preferred orientation, the deposition temperatures can be divided into 3 temperature regions and 2 critical temperatures in-between. Overall, the ZnO films deposited at/below 20$0^{\circ}C$ are seen to have columnar grains with a highly preferred c-axis orientation where the full width at half maximum (FWHM) of X-ray diffraction rocking curve is 14$^{\circ}$. Based on the experimental findings, several FBAR devices were fabricated and measured. As a result, the FBAR devices show return loss of ~19.5dB at resonant frequency of ~2.05GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.26-29
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• 2001

ZnO thin film had been deposited on the glass by Evaporation Ramped method. and electrical and resistivity were investigated. Evaporation gas($O_{2}$,) pressure was 10mTorr~100mTorr, chamber pressure was $2{\times}10^{-5}$, and then ZnO film were deposited. AI-doped ZnO thin film had the lowest resistivity ($1{\times}10^{4}\;{\Omega}{\cdot}cm$), and then carrier concentration and Hall mobility were$6.27{\times}10^{20}\;cm^{3}$ and $22.04 cm^{2}/V{\cdot}s$, respectively. When ZnO film had been deposited by Ramp6ed method compared with normal method and investigated resistivity.