Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

The Characteristic on Electrical Resistivity of Zno film by Ramped method

선택적 증착에 의해서 제작한 ZnO 박막의 전기저항률 특성

  • Published : 2001.05.11
Download PDF
⟨ Previous Next ⟩

Abstract

ZnO thin film had been deposited on the glass by Evaporation Ramped method. and electrical and resistivity were investigated. Evaporation gas($O_{2}$,) pressure was 10mTorr~100mTorr, chamber pressure was $2{\times}10^{-5}$, and then ZnO film were deposited. AI-doped ZnO thin film had the lowest resistivity ($1{\times}10^{4}\;{\Omega}{\cdot}cm$), and then carrier concentration and Hall mobility were$6.27{\times}10^{20}\;cm^{3}$ and $22.04 cm^{2}/V{\cdot}s$, respectively. When ZnO film had been deposited by Ramp6ed method compared with normal method and investigated resistivity.

Keywords