• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.121-124
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• 1998

Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.

• Journal of the Korean Magnetics Society
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• v.12 no.5
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• pp.195-200
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• 2002

Low temperature sintering of Co$_2$Z type Ba ferrites with various oxide additives has been studied. Co$_2$Z phase was obtained by 2 step calcination and XRD peaks showed a good agreement with the peaks of the standard Co$_2$Z phase, except for some minor extra peaks. ZnO-B$_2$O$_3$ glass, ZnO-B$_2$O$_3$ and CuO, ZnO-B$_2$O$_3$ and Bi$_2$O$_3$, and ZnO-Bi$_2$O$_3$ glass were added to lower sintering temperatures. Specimens were sintered at the temperature range between 900 $^{\circ}C$ and 1000 $^{\circ}C$. In the single addition of ZnO-B$_2$O$_3$ glass, the specimen with 7.5 wt％ showed the highest shrinkage. Specimens with complex addition of ZnO-B$_2$O$_3$ glass with CuO or Bi$_2$O$_3$ showed higher shrinkages and initial permeabilities than single addition of ZnO-B$_2$O$_3$ glass. Shrinkages and initial permeabilities of the specimens with ZnO-Bi$_2$O$_3$ glass were higher than those of ZnO-B$_2$O$_3$ glass addition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.45-45
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• 2009

우리는 ZnO Template를 사용한 열기상법을 이용하여 수직 배양한 ZnO nanorods와 ZnO Nanopencils를 성장하였고, Dependency temperature Photoluminescence(PL)의 분석을 통하여 광학적 특성에 대해 분석을 하였다. ZnO 나노구조는 100K 이하의 온도에서 donor-bound exciton가 dominant하고, 100K 이상의 온도에서는 free exciton과 그들의 phonon-replica emission이 dominant한 것을 알 수 있었다. 하지만, ZnO nanorods와 nanopencils은 다른 exciton-phonon coupling의 strength에 의한 surface defects에 의해 excitonic emissions의 다른 거동을 보이는 것을 알았다. 이것으로 인해 상온 PL에서 ZnO nanopencil은 nanorods에 비해 52meV의 red shift를 보였다.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.385-390
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• 2010

We studied the optical characteristics of ZnO:Al and $Al_2O_3$ coated ZnO nanorods. When ZnO:Al is deposited around the undoped ZnO nanorods, thermal diffusion of Al into ZnO gives rise to decrease the binding energy of neutral donor bound exciton whereas an insulating Al2O3 is coated around ZnO, we found that semiconducor-insulator interface states play an important role in optical quenching.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.1
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• pp.118-124
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• 2007

This paper presents the effects of the injected number and amplitude of impulse current on the service life of ZnO varistors for low voltages. To analyze the effects of lightning impulse currents on the performance of ZnO varistors, the measurements of resistive leakage current and power dissipation at the power frequency ac voltage before and after the injections of the $8/20[{\mu}s]$ impulse currents were made. As a consequence, the duration and amplitude of resistive leakage current flowing through ZnO varistor were increased with increasing the number of injections of the $8/20[{\mu}s]$ impulse currents. It is desirable that the service life of ZnO varistors should be evaluated as a function of the number and amplitude of lightning impulse current.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2133-2139
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• 2012

A new system using $TiO_2$ (nano-sized, band-gap 3.14 eV)-impregnated spherical ZnS (micro-sized, band-gap 2.73 eV) nano/micro-composites (Ti 0.001, 0.005, 0.01, and 0.05 mol %/ZnS) was developed to enhance the production of hydrogen from methanol/water splitting. The ZnS particles in a spherical morphology with a diameter of about 2-4 mm which can absorb around 455 nm were prepared by hydrothermal method. This material was used as a photocatalyst with loading by nano-sized $TiO_2$ (20-30 nm) for hydrogen production. The evolution of $H_2$ from methanol/water (1:1) photo splitting over the $TiO_2$/ZnS composite in the liquid system was enhanced, compared with that over pure $TiO_2$ and ZnS. In particular, 1.2 mmol of $H_2$ gas was produced after 12 h when 0.005 mol % $TiO_2$/ZnS nano/micro-composite was used. On the basis of cyclic voltammeter (CV) and UV-visible spectrums results, the high photoactivity was attributed to the larger band gap and the lower LUMO in the $TiO_2$/ZnS composite, due to the decreased recombination between the excited electrons and holes.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.293-300
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• 2005

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at $400^{\circ}C$. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are $2.69\times10cm^{-3}$ and $52.137cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, $E_g(T)=3.5128eV{\cdot}(9.51\times10^{-4}eV/K)T^2/(T+280K)$. After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of $V_{zn},\;V_o,\;Zn_{int},\;and\;O_{int}$ showned on PL spectrum are classified as a donors or accepters type. We confirm that $ZnO:Li/Al_2O_3$ in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.429-429
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• 2008

The structural stability and the elastic modulus of hexagonal ZnO nanowires and nanotubes are investigated using atomistic simulations based on the shell model. The ZnO nanowire with (10-10) facets is energetically more stable than that with (11-20). Our calculations indicate that the structural change of ZnO nanowires with (10-10) facets is sensitive to the diameter. With decreasing the diameter of ZnO nanowires, the unit-cell length is increased while the bond-length is reduced due to the change of surface atoms. Unlike the conventional layered nanotubes, the energetic stability of single crystalline ZnO nanotubes is related to the wall thickness. The potential energy of ZnO nanotubes with fixed outer and inner diameters decreases with increasing wall thickness while the nanotubes with same wall thickness are independent of the outer and inner diameters. The transformation of single crystalline ZnO nanotubes with double layer from wurtzite phase to graphitic suggests the possibility of wall-typed ZnO nanotubes. The size-dependent Young's modulus for ZnO nanowires and nanotubes is also calculated. The diameter and the wall thickness play a significant role in the Young's modulus of single crystalline ZnO nanowires and nanotubes, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.204.1-204.1
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• 2015

We studied the electrical properties and gate bias stress (GBS) stability of thin film transistors (TFTs) with multi-stacked InZnO layers. The InZnO TFTs were fabricated via solution process and the In:Zn molar ratio was 1:1. As the number of InZnO layers was increased, the mobility and the subthreshold swing (S.S) were improved, and the threshold voltage of TFT was reduced. The TFT with three-layered InZnO showed high mobility of $21.2cm^2/Vs$ and S.S of 0.54 V/decade compared the single-layered InZnO TFT with $4.6cm^2/Vs$ and 0.71 V/decade. The three-layered InZnO TFTs were relatively unstable under negative bias stress (NBS), but showed good stability under positive bias stress (PBS).

• Advances in nano research
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• v.5 no.3
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• pp.193-201
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• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.