• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.11
• /
• pp.9-18
• /
• 2003

Two configurations of Film Bulk Acoustic Wave Resonators with acoustic quater-wave bragg reflector layers are theoretically analyzed using equivalent circuits and the difference of their characteristics are discussed. We compare the characteristics of λ/2 mode to those of ideal FBAR with top and bottom electrode contacting air and the characteristics of λ/4 mode to those of ideal FBAR with top electrode contacting air and bottom electrode clamped. We assume that the piezoelectric film is ZnO, the electrode is A1 and the substrate is Si, ABCD parameters are extracted and input impedance is calculated by converting the equivalent circuit from Mason equivalent circuits to the simplified equivalent circuits that ABCD parameters are extracted possible, From the variation of resonance frequency due to the change of thickness of reflector layers and the variation of electrical Q due to the change of mechanical Q of reflector layers, it is confirmed that the reflector layer just under the bottom electrode have the greatest effect on the varation of resonance frequency and electrical Q. It is shown that the number of reflector layers required for the saturation of electrical Q decreases with the increase of the impedance ratio of reflector layers and electrical Q of λ/2 mode is larger than that of λ/4 mode, Electromechanical coupling factor is independent of the number of layers, The impedance ratio of reflector layers becomes larger as the electromechanical coupling factor becomes larger, The electromechanical coupling factor of the two mode are smaller than those of ideal FBARs because of the trapping of acoustic energy in the reflector layers, The insertion loss of the ladder filter decreases with the increase of the number of reflector layers but the bandwidth is not affected much by the number of reflector layers, As the impedance ratio of reflector layers becomes larger the insertion loss becomes smaller and the bandwidth becomes wider, In our analysis of the two mode, characteristics of λ/2 mode appear to be slightly more favorable than that of λ/4 mode

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.230-231
• /
• 2009

펄스 레이저 층착법 (이하 PLD)은 다성분계 산화물 박막 또는 다층구조의 박막 제작에 매우 유용한 기술이다. 본 실험에서는 KrF 엑시머 레이저를 이용하여 pt on Si 기판 위에 150nm 두께의 $Bi_{1.5}ZnNb_{1.5}O_7$(이하 BZN) 박막을 다양한 기판온도에서 제작하였다. XRD를 이용하여 BZN 박막의 구조적 특성을 분석하였고, 박막을 MIM 구조로 제작하여 유정적 특성을 측정하였다. 제조한 BZN 박막은 $500^{\circ}C$ 이상에서 결정질을, $500^{\circ}C$ 이하의 온도에서는 비정질 특성을 보였다. 유전 특성은 100 - 400$^{\circ}C$ 영역에서는 온도가 증가함에 따라 졸은 특성을 나타내었고, $500^{\circ}C$에서부터는 감소하였다. 증착 온도 $400^{\circ}C$에서 제작한 BZN 박막이 유전상수가 67.8, 유전 손실이 0.006으로 가장 줄은 유전특성을 나타내었다.

• Proceedings of the KIEE Conference
• /
• 1992.07b
• /
• pp.794-798
• /
• 1992

We present an optical Voltage and current sensor using $BSO(Bi_{12}SiO_{20})$ monocrystal. The voltage and current sensor consist of PBS(Polarizing Beam Splitter), 1/4 wavelength plate, ZnSe, Selfoc lens, LED, and PIN-PD etc. Magnetic core was made using permalloy for applying magnetic field to current sensor effectively. Current was measured from 100 to 1,600 ampere and accuracy was about ${\pm}$5%. The accuracy could be improved to ${\pm}$l% after reducing the nonlinear property of BSO crystal using our own program in PC (IBM286). We noticed that these data were not influenced by 154,000 voltage at all. Applied voltage was reduced to 1/20 using capacitors. And experiment was carried out up to 450V of the reduced voltage. The data fran optical voltage sensor was similar to that from conventional voltage sensor. The accuracy of the data was within about ${\pm}$1%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.82-82
• /
• 2008

One-dimensional (1D) nanowires have been received much attention due to their potential for applications in various field. Recently some logic applications fabricated on various nanowires, such as ZnO, CdS, Si, are reported. These logic circuits, which consist of two- or three field effect transistors(FETs), are basic components of computation machine such as central process unit (CPU). FETs fabricated on nanowire generally have surrounded shapes of gate structure, which improve the device performance. Highly integrated circuits can also be achieved by fabricating on nano-scaled nanowires. But the numerical and SPICE simulation about the logic circuitry have never been reported and analyses of detailed parameters related to performance, such as channel doping, gate shapes, souce/drain contact and etc., were strongly needed. In our study, NAND and NOT logic circuits were simulated and characterized using 2- and 3-dimensional numerical simulation (SILVACO ATLAS) and built-in spice module(mixed mode).

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.145-148
• /
• 2007

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

• Journal of the Korean institute of surface engineering
• /
• v.20 no.4
• /
• pp.144-153
• /
• 1987

In the case of dipping the Ni-Resist cast iron into molten aluminum with iron content, the thickness of intermetallic compound was remarkably increased with increasing iron content. The thickness was shown by following equation in the range of 1-3% iron content; $x=22.5t^{1/2}+4.47{\cdot}t{\cdot}(Fe%)$. where, x is thickness(${\mu}m$), t the time (minute), Fe% the iron w/o. When the Ni-Resist cast iron was dipped into the molten aluminum containing zinc content, the intermetallic compound thickness was also increased with increasing zinc contents. And thickness was represented by the following equation in the range of 2-10% zinc content; $x=3.46t^{1/2}+0.27{\cdot}t{\cdot}(Zn%)$. However, in the case of dipping the Ni-resist cast iron into molten aluminum with silicon content, the thickness of intermetallic compound was decreased with increasing silicon content, as shown in the following equation; $x=7.17t^{1/2}-0.15{\cdot}t{\cdot}(Si%)$. The intermetallic compound formed onto Ni-Resist cast iron was identified to be $FeAl_3\;and\;Fe_3Al$. As the result of hardness measurement, the peak hardness appeared in the intermetallic compound at near interface of the cast iron and the compound.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.34 no.2
• /
• pp.99-104
• /
• 2021

Ion-beam sputtering (IBS) was used to deposit semiconducting IZTO (indium zinc tin oxide) thin films onto heavily-doped Si substrates using a sintered ceramic target with the nominal composition In0.4Zn0.5Sn0.1O1.5, which could work as a channel layer for oxide TFT (oxide thin film transistor) devices. The crystallization behavior and electrical properties were examined for the films in terms of deposition parameters, i.e. target tilt angle and substrate temperature during deposition. The thickness uniformity of the films were examined using a stylus profilometer. The observed difference in electrical properties was not related to the degree of crystallization but to the deposition temperature which affected charge carrier concentration (n), electrical resistivity (ρ), sheet resistance (Rs), and Hall mobility (μH) values of the films.

• Resources Recycling
• /
• v.2 no.2
• /
• pp.27-38
• /
• 1993

In this study, we investigated the grinding and sedimentation(elutriation) process of the dusts for the effective separation of high purity iron and iron oxides. For characterization of the dust, particle size distribution and chemical composition, were examined. The results obtained in this study may be summarized as follows : 1. The converter CF(clarifier) dust of the Pohang 1st, 2nd steel making factory and EC(Evaporation Cooler), EP(Eltrostatic precititator) dust of the Kwangyang 2nd steel making factory are composed $\alpha$-Fe(21~50%), FeO(wustite)$Fe_3$$O_4$(magnetite), $Fe_2$$O_3$, CaO, $Al_2$$O_3$, $SiO_2$, and etc. 2. Pure iron has ductile characteristic in nature, particle size of the pure iron increase by increasing the grinding time. On the other hand, it is conformed that bo고 particles of hematite and magnetite become less than 325 mesh after 10 minutes grinding. 3. By applying the elutriation technique for the EC dust of the Kwangyang 2nd steel making factory, the iron powder of high content more than 99.17% of pure Fe was recovered with 37.8% yield at grinding time for 40 minutes. 4. By applying the elutriation technique for the CF dust of the Pohang 2nd steel making factory, the iron powder of high content more than 98.38% of pure Fe was recovered with 44.42% yield at grinding time for 40 minutes. 5. When magnetic separation was performed using plastic bonding magnet of 70 gauss, more than 98% Fe grade of iron powder was recovered in the size range +65 -200 mesh but the recovery of it was low.

• Journal of the Korean Ceramic Society
• /
• v.43 no.2 s.285
• /
• pp.136-141
• /
• 2006

The stabilizing behavior of heavy metals in the silicate glass containing Electric Arc Furnace dust (EAF dust) were studied by the Toxic Characterization Leaching Procedure (TCLP) test, and the change of crystalline phase and glass network structure were investigated as a function of EAF dust content added. The glass containing EAF dust of $30\;wt\%$ an oxygen/network former ratio(R) of $2\~3$ allowing a fairly stable network structure thus showed much lower heavy metal leaching concentration than that for containing EAF dust above $50\;wt\%$ at TCLP test. For the glass containing EAF dust $50\~60\;wt\%$, however, the R was over 3, which weakened the glass network structure and increased the heavy metals leachate. Adding the EAF dust to a glass decreased the degree of Si-O-Si symmetry and increased the number of non-bridging oxygen, which decreased the chemical durability of glasses. When the dust content in a glass was over $70\;wt\%$, the Zn and Fe ions reacted to form the spinel crystal rather than to bind to network structure of glass and leaching concentration of those ions from the specimen decreased, so the spinel phase could be attributed to lowering a heavy metal leaching.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.245-245
• /
• 2012

차세대 디스플레이로 각광받고 있는 AMOLED에 대한 관심이 높아짐에 따라 구동 소자의 연구가 활발히 이루어지고 있다. 산화물 반도체 박막 트랜지스터는 비정질 실리콘 박막 트랜지스터에 비해 100 $cm^2$/Vs 이하의 높은 이동도와 우수한 전기적 특성으로 AMOLED 구동 소자로서 학계에서 입증되어왔고, 현재 여러 기업에서 산화물 반도체를 이용한 박막 트랜지스터 제작 연구가 활발히 이루어지고 있다. 본 연구는 열처리 조건을 가변하여 제작한 산화물 반도체 박막 트랜지스터의 전기적 특성 분석을 목적으로 한다. 실리콘 기판에 oxidation 공정을 이용하여 SiO2 100 nm, DC스퍼터링을 이용하여 ITZO (Indium-Tin-Zinc Oxide) 산화물 반도체 박막 50 nm, 증착된 산화물 반도체 박막의 열처리 후, evaporation을 이용하여 source/drain 전극 Ag 150 nm 증착하여 박막 트랜지스터를 제작하였다. 12 sccm의 산소유량, 1시간의 열처리 시간에서 열처리 온도 $400^{\circ}C$, $200^{\circ}C$의 샘플은 각각 이동도 $29.52cm^2/V{\cdot}s$, $16.15cm^2/V{\cdot}s$, 문턱전압 2.61 V, 6.14 V, $S{\cdot}S$ 0.37 V/decade, 0.85 V/decade, on-off ratio 5.21 E+07, 1.10 E+07이었다. 30 sccm의 산소유량, 열처리 온도 $200^{\circ}C$에서 열처리 시간 1시간, 1시간 30분 샘플은 각각 이동도 $12.27cm^2/V{\cdot}s$, $10.15cm^2/V{\cdot}s$, 문턱전압 8.07 V, 4.21 V, $S{\cdot}S$ 0.89 V/decade, 0.71 V/decade, on-off ratio 4.31 E+06, 1.05 E+07이었다. 산화물 반도체의 열처리 효과 분석을 통하여 높은 열처리 온도, 적은 산소의 유량, 열처리 시간이 길수록 이동도, 문턱전압, $S{\cdot}S$의 산화물 박막 트랜지스터 소자의 전기적 특성이 개선되었다.