• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.349-352
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• 2012

ZnO thin films were deposited on a-, c- and m- plane oriented 4H-SiC substrates by pulsed laser deposition. ZnO nanowires were formed on substrates by tube furnace. Shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. Average surface roughness and root mean square surface roughness were measure by atomic force microscope. Optical properties were investigated by Photoluminescence measurement. Density of ZnO nanowires grown on a-, c- and m-plane oriented 4H-SiC substrates were 17.89 ${\mu}m^{-2}$, 9.98 ${\mu}m^{-2}$ and 2.61 ${\mu}m^{-2}$, respectively.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.15-19
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• 2003

In This paper, we developed 1.96 GHz air gap type FBAR BPF using ZnO as piezoelectric sputtered by RF magnetron at room temperature. FBAR BPF was fabricated by sputtering bottom electrode (Al), ZnO as piezoelectric and top electrode (Mo) on Si wafer one by one with RF magnetron sputter, then Si was dry etched to make an air hole. XRD test result of fabricated FBAR BPF showed that ZnO crystal was well pre-oriented as (002) and sigma value of XRC was 1.018. IL(Insertion loss) showed excellent result as 1 dB.

• Particle and aerosol research
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• v.6 no.2
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• pp.51-59
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• 2010

ZnO quantum dots embedded in a silica matrix without agglomeration were synthesized from $TEOS:Zn(NO_3)_2$ solutions in one-step process by aerosol-gel method. It was successfully demonstrated that the size of ZnO Q-dots could be controlled from 2 to 7 mm verified by a high resolution transmission electron microscope observation. The line scanning energy dispersive X-ray spectroscopy(EDS) revealed that the Q-dots existed preferentially inside SiO2 sphere when Zn/Si < 0.5. However, the Q-dots distributed homogeneously all over the sphere when Zn/Si > 1.0. Blue-shifted UV/Vis absorption peak observation confirmed the quantum size effect on the optical properties. The photoluminescence(PL) emission peaks of the powders at room temperature were consistent with previous reports in the following aspects: 1) PL characteristics are dominated by two peaks of deep-level defect-related emissions at 2.4 - 2.8 eV, 2) the first defect-related peak at 2.4 eV was blue shifted due to the quantum size effect with decreasing the concentration of $Zn(NO_3)_2$(decreasing the size of ZnO q dots). More interestingly, the existence of surface-exposed ZnO q dots affects greatly the second defect PL peak at 2.8 eV.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.26.1-26.1
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• 2011

We investigated the atomic layer deposition (ALD) process for nitrogen doped ZnO and the application for n-ZnO : N/p-Si (NW) coaxial hetero-junction photodetectors. ALD ZnO:N was deposited using diethylzinc (DEZ) and diluted $NH_4OH$ at $150^{\circ}C$ of substrate temperature. About 100~300 nm diameter and 5 um length of Si nanowires array were prepared using electroless etching technique in 0.108 g of $AgNO_3$ melted 20 ml HF liquid at $75^{\circ}C$. TEM images showed ZnO were deposited on densely packed SiNW structure achieving extraordinary conformality. When UV (360 nm) light was illuminated on n-ZnO:N/p-SiNW, I-V curve showed about three times larger photocurrent generation than film structure at 10 V reverse bias. Especially, at 660 nm wave length, the coaxial structure has 90.8% of external quantum efficiency (EQE) and 0.573 A/W of responsivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.271-278
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• 2006

Green light emitting $Zn_2SiO_4$Mn and Al co-doped $Zn_2SiO_4$:Mn phosphor were synthesized by a sol-gel method combined with a furnace firing. The luminescent properties of the sample have been investigated. We have found that the phosphor powder with uniform shape show the maximum luminescent intensity when it is prepared with sol-gel method and fired at relatively high temperature ($1100{\sim}1300^{\circ}C$).

• Journal of Information Display
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• v.1 no.1
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• pp.35-41
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• 2000

Manganese-doped $Zn_2SiO_4$ phosphors well known as a green emitter with high luminescence efficiency were prepared by the homogeneous precipitation method, and their photoluminescence properties under vacuum-ultraviolet (VUV) excitation were investigated. $Zn_2SiO_4$:Mn phosphors obtained by this method have exhibited a high luminance of property and a spherical shape of particles. In particular, the green emission intensity of zinc orthosilicate prepared as containing around 2 mole% of manganese was much stronger than that of the commercial $Zn_2SiO_4$:Mn phosphor, while the decay time was longer. However, addition of $Al^{3+}$ and $Li^+$ into $Zn_2SiO_4$:Mn composition has significantly diminished the decay time of the phosphor without much degradation of the emission intensity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.968-971
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• 2003

Due to a low efficiency of phosphor with large Stoke shift in Vacuum Ultra Violet (VUV) excitation environment, new PDP phosphors which can be excited in UV excitation environment need to be developed. In this study, $Zn_2SiO_4:Tb$ phosphor was synthesized by solid-state reaction method at $1300^{\circ}C$ with varying Tb concentration, and its cross relaxation effect was observed by Photoluminescence (PL) measurement. In order to decrease $^5D_3{\to}7F_j$ transition with blue emission in $Zn_2SiO_4:Tb$ phosphor, Dy, co-activator element, was added to $Zn_2SiO_4:Tb$ phosphor. In 254nm excitation environment, broad-emission peak was observed around 524nm, green emission.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.121-124
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• 2007

The $Zn_2SiO_4:Mn$ phosphors were prepared using polymer matrix technique in order to improve the performance of green emitting phosphors for plasma display panel(PDP). $Zn_2SiO_4:Mn$ phosphor exhibits a strong green emission around 520-530 nm. The emission intensity and particle size of powders were controlled by sintering temperature and raw material composition. The zinc silicate $Zn_2SiO_4:Mn$ single phase were obtained at lower temperature than prepared by solid-state reaction method. PL luminance of $Zn_2SiO_4:Mn$ phosphor was similar to the commercial material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.71-75
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• 2014

To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.471-477
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• 1991

Effects of ZnO, PbO and SiO2 on the grain growth and magnetic properties of Sr-ferrite were investigated. (1) Addition of ZnO to Sr-ferrite increased remanence, but decreased coercivity and maximum energy product. (2) Addition of PbO up to 0.5 wt% increased (B$.$H)max of Sr-ferrite, but addition more than 0.5 wt% decreased (B$.$H)mzx (3) SiO2 addition to the 0.5 wt% PbO doped Sr-ferrite decreased remanence and increased coercivity. The coercivity increase in due to the grain refinement effect of SiO2. But addition of SiO2 more than 0.5 wt% invoked a decrease of coercivity and (B$.$H)max of Sr-ferrite due to abnormal grain growth. Sr-ferrite magnet having maximum energy product of 3.7MGOe was fabricated by using the roasting product of Pyrrhotite.