[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/JKEM.2012.25.5.349

Photoluminescence Characteristics of ZnO Nanowires Grown on a-, c- and m-plane Oriented 4H-SiC Substrates

Kim, Ik-Ju (Department of Electronic Materials Engineering, Kwangwoon University)
Yer, In-Hyung (Department of Electrical Engineering, Korea University)
Moon, Byung-Moo (Department of Electrical Engineering, Korea University)
Kang, Min-Seok (Department of Electronic Materials Engineering, Kwangwoon University)
Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)

Publication Information

Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.5, 2012 , pp. 349-352 More about this Journal

Abstract

ZnO thin films were deposited on a-, c- and m- plane oriented 4H-SiC substrates by pulsed laser deposition. ZnO nanowires were formed on substrates by tube furnace. Shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. Average surface roughness and root mean square surface roughness were measure by atomic force microscope. Optical properties were investigated by Photoluminescence measurement. Density of ZnO nanowires grown on a-, c- and m-plane oriented 4H-SiC substrates were 17.89 ${\mu}m^{-2}$ , 9.98 ${\mu}m^{-2}$ and 2.61 ${\mu}m^{-2}$ , respectively.

Keywords

4H-SiC; Substrate orientation; ZnO; Nanowire; Photoluminescence;

Citations & Related Records

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KSCI

Photoluminescence Characteristics of ZnO Nanowires Grown on a-, c- and m-plane Oriented 4H-SiC Substrates 4H-SiC 기판의 a-, c-, m-면방향에 따른 ZnO 나노선의 Photoluminescence 특성 분석

Photoluminescence Characteristics of ZnO Nanowires Grown on a-, c- and m-plane Oriented 4H-SiC Substrates