• 한국재료학회지
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• 제26권2호
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• pp.84-89
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• 2016

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.711-715
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• 2007

Properties of organic light-emitting diodes (OLEDs) with aluminum-doped zinc oxide (ZnO:Al) anodes showed different behaviors from OLEDs with indium tin oxide (ITO) anodes according to driving conditions. OLEDs with ITO anodes gave higher current density and luminance in lower voltage region and better EL and power efficiency under lower current density conditions, However, OLEDs with ZnO:Al anodes gave higher current density and luminance in higher voltage region over about 8V and better EL and power efficiency under higher current density over $200mA/cm^2$. These seemed to be due to the differences in conduction properties of semiconducting ZnO:Al and metallic ITO. OLEDs with ZnO:Al anodes showed nearly saturated efficiency under high current driving conditions compared with those of OLEDs with ITO anodes. This meant better charge balance in OLEDs with ZnO:Al anodes. These properties of OLEDs with ZnO:Al anodes are useful in making bright display devices with efficiency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.252-253
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• 2011

ZnO-based thin film transistors (TFTs) are of great interest for application in next generation flat panel displays. Most research has been based on amorphous indium-gallium-zinc-oxide (IGZO) TFTs, rather than single binary oxides, such as ZnO, due to the reproducibility, uniformity, and surface smoothness of the IGZO active channel layer. However, recently, intrinsic ZnO-TFTs have been investigated, and TFT- arrayss have been demonstrated as prototypes of flat-panel displays and electronic circuits. However, ZnO thin films have some significant problems for application as an active channel layer of TFTs; it was easy to change the electrical properties of the i-ZnO thin films under external conditions. The variable electrical properties lead to unstable TFTs device characteristics under bias stress and/or temperature. In order to obtain higher performance and more stable ZnO-based TFTs, HZO thin film was used as an active channel layer. It was expected that HZO-TFTs would have more stable electrical characteristics under gate bias stress conditions because the binding energy of Hf-O is greater than that of Zn-O. For deposition of HZO thin films, Hf would be substituted with Zn, and then Hf could be suppressed to generate oxygen vacancies. In this study, the fabrication of the oxide-based TFTs with HZO active channel layer was reported with excellent stability. Application of HZO thin films as an active channel layer improved the TFT device performance and bias stability, as compared to i-ZnO TFTs. The excellent negative bias temperature stress (NBTS) stability of the device was analyzed using the HZO and i-ZnO TFTs transfer curves acquired at a high temperature (473 K).

• 한국표면공학회지
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• 제54권5호
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• pp.260-266
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• 2021

Synthesizing low-dimensional structures of oxide semiconductors is a promising approach to fabricate highly efficient gas sensors by means of possible enhancement in surface-to-volume ratios of their sensing materials. In this work, vertically aligned zinc oxide (ZnO) nanorods are successfully synthesized on a transparent glass substrate via seed-mediated hydrothermal synthesis method with the use of a ZnO nanoparticle seed layer, which is formed by thermally oxidizing a sputtered Zn metal film. Structural and optical characterization by x-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy reveals the successful preparation of the ZnO nanorods array of the single hexagonal wurtzite crystalline phase. From gas sensing measurements for the nitrogen dioxide (NO₂) gas, the vertically aligned ZnO nanorod array is observed to have a highly responsive sensitivity to NO₂ gas at relatively low concentrations and operating temperatures, especially showing a high maximum sensitivity to NO₂ at 250 ℃ and a low NO₂ detection limit of 5 ppm in dry air. These results along with a facile fabrication process demonstrate that the ZnO nanorods synthesized on a transparent glass substrate are very promising for low-cost and high-performance NO₂ gas sensors.

• Journal of the Korean Physical Society
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• 제73권9호
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• pp.1351-1355
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• 2018

The photocurrent characteristics of zinc-oxide (ZnO) thin-film transistors (TFTs) prepared using radio-frequency sputtering and spin-coating methods were investigated. Various characterization methods were used to compare the physical and the chemical properties of the sputtered and the spin-coated ZnO films. X-ray photoelectron spectroscopy was used to investigate the chemical composition and state of the ZnO films. The transmittance and the optical band gap were measured by using UV-vis spectrometry. The crystal structures of the prepared ZnO films were examined by using an X-ray diffractometer, and the surfaces of the films were investigated by using scanning electron microscopy. ZnO TFTs were prepared using both sputter and solution processes, both of which showed photocurrent characteristics when illuminated by light. The sputtered ZnO TFTs had a photoresponsivity of 3.08 mA/W under illumination with 405-nm light while the solution-processed ZnO TFTs had a photoresponsivity of 5.56 mA/W. This study provides useful information for the development of optoelectronics based on ZnO.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.789-794
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• 2008

Zinc oxide (ZnO) has been widely studied for its practical applications such as transparent conduction electrodes for flat panel displays and solar cells. Especially, ZnO films show good chemical stability against hydrogen plasma, absence of toxicity, abundance in nature, and then suitable for photovoltaic applications. However, the fabrication process of thin film solar cells require a high substrate temperature and/or post heat treatment. Therefore, the layers have to withstand high temperatures, requiring an excellent stability without degrading their electronic and optical properties. In this paper, we investigated the stability of zinc oxide (ZnO) films doped with aluminum and hydrogen. Doped ZnO films were prepared by r.f. magnetron sputter and followed by heat treatment at different temperatures and for various times.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권3호
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• pp.111-114
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• 2002

Using the plasma that we developed to generate a low-temperature plasma at atmospheric pressure, we have investigated the etching possibility of an air-exposed zinc oxide(ZnO) thin films. Hydrogen and methane radicals generated from the plasma were observed and their intensity was found to be dependent on the isomer of butyl acetate by an analysis with optical emission spectrosxopy. The etching ability of this plasma was evaluated by an emission intensity, etching time, rf power.

• 한국표면공학회지
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• 제33권4호
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• pp.229-232
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• 2000

C-axis oriented zinc oxide thin films were deposited on glass substrate by reactive Facing Targets Sputtering (FTS) system. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alphastep (Tencor) analyses. The Facing Targets Sputtering system can deposit thin film in plasma-free situation and change the deposition condition in wide range. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature $300^{\circ}C$, inter targets distance 100mm. In the conditions, the rocking curve of zinc oxide thin films deposited on ZnO/Glass was $3.9^{\circ}$.

• 자원리싸이클링
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• 제15권4호
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• pp.44-51
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• 2006

대부분 전기로 분진 처리공정은 전기로 분진으로부터 아연을 회수하기 위하여 전기로 분진에 함유된 산화아연의 환원제로 탄소를 사용한다. 본 연구에서는 산화아연의 탄소열환원반응에 관한 전기로 분진의 주성분 중의 하나인 산화철의 영향에 대하여 속도론적으로 조사되었다. 실험은 반응온도 1173 K-1373 K 범위에서 중량감량법을 이용하여 수행되었다. 실험결과, 적절한 량의 산화철 첨가는 산화아연의 탄소열환원반응 속도를 증진시키는 것으로 나타났다. 이것은 산화철이 산화아연의 탄소열환원반응에서 탄소의 gasification 반응을 촉진시키기 때문으로 관찰되었다. 표면화학반응이 율속인 shrinking core model 1173 - 1373 K 범위에서 고체 탄소에 의한 산화아연의 환원반응 속도 데이터를 분석하는데 유용한 것으로 분석되었다. ZnO-C 반응계에서 활성화 에너지는 224kJ/mol (53 kcal/nol)로, $ZnO-Fe_{2}O_{3}-C$ 반응계에서 활성화 에너지는 175kJ/mol(42kca1/mol)로 그리고 ZnO-밀스케일-C 반응계에서 활성화 에너지는 184 kJ/mol (44 kcal/mol)로 각각 계산되었다.

• Asian-Australasian Journal of Animal Sciences
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• 제17권12호
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• pp.1635-1640
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• 2004

Two experiments were conducted to evaluate developmental gene expression of antimicrobial peptide PR-39 and effect of zinc oxide on gene regulation of PR-39 in piglets using semi-quantitative RT-PCR analysis. In experiment 1, fifteen female Tai-Hu pigs (a local breed in China) in five groups, each of three pigs at 1, 14, 28, 42 and 56 days of age were used to determine effect of age and weaning on mRNA expression of PR-39. In experiment 2, nine groups of pigs (total seventy-two female 36 days-age weanling Tai-Hu piglets) were assigned to three treatments (${ZnO}_0$, ${ZnO}_{100}$ and ${ZnO}_{3000}$). The feeding experimental period lasted 15 days. After feeding experiment, nine pigs with three animals in each treatment were chosen to determine the effect of ZnO on PR-39 mRNA expression of pigs. The results showed that PR-39 mRNA levels increased steadily in postnatal day 1-28 (preweaning), and weaning significantly decreased PR-39 mRNA expression of piglets (p<0.05). ${ZnO}_{3000}$ (3,000 mg zinc/kg diet) significantly increased PR-39 mRNA expression (p<0.05) when piglets were feed ${ZnO}_{3000}$ diet for 15 days. ${ZnO}_{100}$ (100 mg zinc/kg diet) also increased PR-39 gene expression, but the result was not statistically significant (p>0.05). The result was in accordance with the effect of ${ZnO}_{3000}$ and ${ZnO}_{100}$ on weight gain of piglets and prevention of diarrhea.