• Title/Summary/Keyword: ZnCdSe

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Nitric Oxide Detection of Fe(DTC)3-hybrizided CdSe Quantum Dots Via Fluorescence Energy Transfer

  • Chang-Yeoul, Kim
    • Journal of Powder Materials
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    • v.29 no.6
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    • pp.453-458
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    • 2022
  • We successfully synthesize water-dispersible CTAB-capped CdSe@ZnS quantum dots with the crystal size of the CdSe quantum dots controlled from green to orange colors. The quenching effect of Fe(DTC)3 is very efficient to turn off the emission light of quantum dots at four molar ratios of the CdSe quantum dots, that is, the effective covering the surface of quantum dots with Fe(DTC)3. However, the reaction with Fe(DTC)3 for more than 24 h is required to completely realize the quenching effect. The highly quenched quantum dots efficiently detect nitric oxide at nano-molar concentration of 110nM of NO with 34% of recovery of emission light intensity. We suggest that Fe(DTC)3-hybridized CdSe@ZnS quantum dots are an excellent fluorescence resonance energy transfer probe for the detection of nitric oxide in biological systems.

Fabrication Process of Light Emitting Diodes Using CdSe/CdS/ZnS Quantum Dot

  • Cho, Nam Kwang;Kang, Seong Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.428-428
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    • 2013
  • Red color light emitting diodes were fabricated using CdSe/CdS/ZnS quantum dots (QDs). Patterned indium-tin-oxide (ITO) was used as a transparent anode, and oxygen plasma treatment on a surface of ITO was performed. Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was spin coated on the ITO surface as a hole injection layer. Then CdSe/CdS/ZnS QDs was spin coated and thermal treatment was performed for the cross-linking of QDs. TiO2 was coated on the QDs as an electron transport layer, and 150 nm of aluminum cathode was formed using thermal evaporator and shadow mask. The device shows a pure red color emission at 606 nm wavelength. Device characteristics will be presented in detail.

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Quantum dot sensitized ZnO nanowire array for solar cell application

  • Seol, Min-Su;Kim, Hui-Jin;Kim, U-Seok;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.384-384
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    • 2011
  • 양자점 감응형 태양전지는 염료감응형 태양전지와 비슷한 구조를 가지지만, 유기물 염료를 대신하여 무기물 양자점을 사용함으로서 기존 유기물 염료가 가지는 한계점을 극복할 수 있다. 양자점을 광감응 염료로 사용하는 경우 양자제한효과(quantum confinement effect)에 의해 양자점의 사이즈조절만으로 밴드갭을 조절할 수 있어 광학적 특성 조절이 용이하며, 유기물 염료보다 광흡수 능력도 뛰어나다. 더불어, 하나의 광자를 흡수하여 두개 이상의 전자-정공쌍을 만들 수 있는(multiple exciton generation) 가능성이 있어 기존 태양전지가 가지는 이론적 한계효율(Shockley-Queisser limit)을 뛰어넘을 수 있다. 본 연구에서는 고효율의 양자점 감응형 태양전지 개발을 위해, ZnO 나노선 구조에 CdS, CdSe 양자점을 증착한 CdSe/CdS/ZnO 나노선 헤테로구조를 수열합성법으로 합성하였다. 증착한 CdSe/CdS 양자점이 태양광의 가시광 전 영역을 흡수하여 전자-정공을 생성하며, 세 물질 간의 밴드구조를 통해 양자점에서 생성된 전자가 ZnO 나노선으로 포집되고, 바닥전극으로 직접연결이 되어있는 1차원의 나노선 구조를 통해 전자를 효율적으로 운반할 수 있다.

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InP/ZnS Core/shell as Emitting Layer for Quantum Dot LED

  • Kwon, Byoung-Wook;Son, Dong-Ick;Lee, Bum-Hee;Park, Dong-Hee;Lim, Ki-Pil;Woo, Kyoung-Ja;Choi, Heon-Jin;Choi, Won-Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.451-451
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    • 2012
  • Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

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Photoanode Effects Based ZnO Sheets (ZnO Sheets 기반 Photoanode Effects)

  • Park, Mi-Yeong;Kim, Yeong-Tae;Im, Dong-Chan;Lee, Gyu-Hwan;Jeong, Yong-Su
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.197-197
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    • 2009
  • 전기도금방법으로 여러형태의 ZnO 나노구조를 ITO/glass 위에 전착하였다. 그 중 sheet 형태의 ZnO 나노구조 위에 $TiO_2$와 CdSe 나노입자를 전기화학적 방법으로 전착하여 유 무기 복합태양전지 및 염료감응형 태양전지의 anode로 적용하였다. 동일조건 하에서 ZnO-CdSe 형태의 전극을 사용하였을 때 Jsc, Voc 값이 상대적으로 다른 전극에 비해 증가하였다.

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Solar Energy Conversion by the Regular Array of TiO2 Nanotubes Anchored with ZnS/CdSSe/CdS Quantum Dots Formed by Sequential Ionic Bath Deposition

  • Park, Soojeong;Seo, Yeonju;Kim, Myung Soo;Lee, Seonghoon
    • Bulletin of the Korean Chemical Society
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    • v.34 no.3
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    • pp.856-862
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    • 2013
  • The photoanode electrode of $TiO_2$ nanotubes (NTs) anchored with ZnS/CdSSe/CdS quantum dots (QDs) was prepared by anodization of Ti metal and successive ionic layer adsorption and reaction (SILAR) procedure. The tuning of the band gap of CdSSe was done with controlled composition of Cd, S, or Se during the SILAR. A ladder-like energy structure suitable for carrier transfer was attained with the photoanode electrode. The power conversion efficiency (PCE) of our solar cell fabricated with the regular array of $TiO_2$ NTs anchored with CdSSe/CdS or CdSe/CdS QDs [i.e., (CdSSe/CdS/$TiO_2NTs$) or (CdSe/CdS/$TiO_2NTs$)] was PCE = 3.49% and 2.81% under the illumination at 100 mW/$cm^2$, respectively. To protect the photocorrosion of our solar cell from the electrolyte and to suppress carrier recombination, ZnS was introduced onto CdSSe/CdS. The PCE of our solar cell with the structure of a photoanode electrode, (ZnS/CdSSe/CdS/$TiO_2$ NTs/Ti) was 4.67% under illumination at 100 mW/$cm^2$.

Eco-Friendly Emissive ZnO-Graphene QD for Bluish-White Light-Emitting Diodes

  • Kim, Hong Hee;Son, Dong Ick;Hwang, Do-Kyeong;Choi, Won Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.627-627
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    • 2013
  • Recently, most studies concerning inorganic CdSe/ZnS quantum dot (QD)-polymer hybrid LEDs have been concentrated on the structure with multiple layers [1,2]. The QD LEDs used almost CdSe materials for color reproduction such as blue, green and red from the light source until current. However, since Cd is one of six substances banned by the Restriction on Hazardous Substances (RoHS) directive and classified into a hazardous substance for utilization and commercialization as well as for use in life, it was reported that the use of CdSe is not suitable to fabricate a photoelectronic device. In this work, we demonstrate a novel, simple and facile technique for the synthesis of ZnO-graphene quasi-core.shell quantum dots utilizing graphene nanodot in order to overcome Cd material including RoHS materials. Also, We investigate the optical and structural properties of the quantum dots using a number of techniques. In result, At the applied bias 10 V, the device produced bluish-white color of the maximum brightness 1118 cd/$m^2$ with CIE coordinates (0.31, 0.26) at the bias 10 V.

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