• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.156-161
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• 2015

The electronic structures of the potential candidate semiconductor nanoparticles for dye-sensitized solar cell (DSSC), such as $ZnSnO_3$ and $Zn_2SnO_4$, have been investigated by employing X-ray photoemission spectroscopy (XPS). The measured X-ray diffraction patterns show that $ZnSnO_3$ and $Zn_2SnO_4$ samples have the single-phase ilmenite-type structure and the inverse spinel structure, respectively. The measured Zn 2p and Sn 3d core-level XPS spectra reveal that the valence states of Zn and Sn ions are divalent (Zn 2+) and tetravalent (Sn 4+), respectively, in both $ZnSnO_3$ and $Zn_2SnO_4$. On the other hand, the shallow core-level measurements show that the binding energies of Sn 4d and Zn 3d core levels in $ZnSnO_3$ are lower than those in $Zn_2SnO_4$. This work provides the information on the valence states of Zn and Sn ions and their chemical bonding in $ZnSnO_3$ and $Zn_2SnO_4$.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.155-162
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• 2002

The sensing properties of carbon monooxide were investigated as a function of mixing ratio and the lamination structure of 3mol% ZnO-doped $SnO_2$ and 3mol% $SnO_2$-doped ZnO. The lamination structures were fabricared monolayer, double layer, and hetero layer of $SnO_2$, Zno, and theirs mixture composition using thick film process. There was no second phase by the reaction of $SnO_2$ and ZnO. The conductance was decreased by the addition of ZnO in $SnO_2$, but it was increased with the addition of $SnO_2$ in ZnO. The conductance was increased with temperature and the inlet of CO. There was no improvement of sensitivity in the structure of mono- and double-layer. The hetero-layer structure, however, of $SnO_2$ 3ZnO-ZnO $3SnO_2$ showed the higher resistivity and the highest sensitivity. Ohmic characteristics was confirmed by the linear properties for I-V measurements.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.213-219
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• 1994

The formations of spinel and colors of ZnO-Fe2O3-TiO2-SnO2 system have been researched on the basis of ZnO-Fe2O3 system. Specimens were prepared by substituting Fe3+, with Ti4+ or Sn4+ when mole ratios between Fe3+ and Ti4+ or between Fe3+ and Sn4+ were 0.2 mole. The reflectance measurement and X-ray diffraction analysis of the formation of spinel and the colors of there specimens were carried out. ZnO-Fe2O3 system in which Fe2O3 was substituted with SnO2 and TiO2 was formed the spinel structure of 2ZnO.TiO2, 2ZnO.SnO2, ZnO.Fe2O3. The stable stains which were colored with yellow and brown could be manufactured.

• Journal of the Korean Ceramic Society
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• v.14 no.3
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• pp.187-192
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• 1977

For the purpose researching to the influence of tetrahedral and octahedral preference of cations of $Ni^{2+}$, $Ti^{4+}$ upon the formation and the color development of the $ZnO-SnO_2$ spinel containing $Ni^{2+}$ and $Ti^{4+}$ ions, the gradual substitution of $Ni^{2+}$ ions for $Zn^{2+}$ ions and of $Ti^{4+}$ ions for $Sn^{4+}$ ions of the spinel in NiO-ZnO-$SnO_2$-$TiO_2$ system was carried out. On samples prepared by calcining the oxide and basic cabonate mixtures at $1300^{\circ}C$ for 2 hours, the X-ray analysis, measurement of reflectance and the test of their stabilaity as a glaze pigment were also carried out. The results are summarized as follows 1) Single spinel was formed completely to x=1 in the $xNiO\cdot(2-x)ZnO\cdot{SnO}_2$system, and gave brilliant lightgreen hue. Moreover, $NiO\cdot{ZnO}\cdot{SnO}_2$ formed easily spinel than $NiO\cdot{MgO}\cdot{SnO}_2$ because Zn^{2+}$ ions had more strong tetrahedral preference than $Mg^{2+}$ ions. 2) As the gradual substitution of $Ti^{4+}$ ions for $Sn^{4+}$ ions in $NiO\cdot{MgO}\cdot{SnO}_2$ system, the spinels formed well and was nearly not changed in the hue. 3) The results of glaze test. (1) As the gradual substitution of $Ni^{2+}$ ions for $Zn^{2+}$ ions, the color changed from dull white to graish broun gradually in calcium-zinc glaze and calcium glaze, and from white to beige in tile glaze. (2) As the gradual substitution of $Ti^{4+}$ ions for $Sn^{4+}$ ions in $NiO-ZnO-SnO_2-TiO_2$ system, the color was become dull generally and was not change in tile glaze.

• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.173-187
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• 2021

In the present research, a simple electrochemical sensor based on a carbon paste electrode (CPE) modified with ZnO-Zn₂SnO₄-SnO₂ and graphene (ZnO-Zn₂SnO₄-SnO₂/Gr/CPE) was developed for the direct, simultaneous and individual electrochemical measurement of Acetaminophen (AC), Caffeine (Caf) and Ascorbic acid (AA). The synthesized nano-materials were investigated using scanning electron microscopy, X-ray Diffraction, Fourier-transform infrared spectroscopy, and electrochemical impedance spectroscopy techniques. Cyclic voltammetry and differential pulse voltammetry were applied for electrochemical investigation ZnO-Zn₂SnO₄-SnO₂/Gr/CPE, and the impact of scan rate and the concentration of H⁺ on the electrode's responses were investigated. The voltammograms showed a linear relationship between the response of the electrode for individual oxidation of AA, AC and, Caf in the range of 0.021-120, 0.018-85.3, and 0.02-97.51 μM with the detection limit of 8.94, 6.66 and 7.09 nM (S/N = 3), respectively. Also, the amperometric technique was applied for the measuring of the target molecules in the range of 0.013-16, 0.008-12 and, 0.01-14 μM for AA, AC and, Caf with the detection limit of 6.28, 3.64 and 3.85 nM, respectively. Besides, the ZnO-Zn₂SnO₄-SnO₂/Gr/CPE shows an excellent selectivity, stability, repeatability, and reproducibility for the determination of AA, AC and, Caf. Finally, the proposed sensor was successfully used to show the amount of AA, AC and, Caf in urine, blood serum samples with recoveries ranging between 95.8% and 104.06%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.304-308
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• 2012

Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.446-450
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• 2012

The important factors in sensors are sensitivity, selectivity, and response time. Oxide semiconductors are high sensitivity, fast response and the advantage of miniaturization. Zn-doped $SnO_2$ materials have been synthesized in order to improve the selectivity of the sensor. ZnO/$SnO_2$ crystals were prepared by a simple hydrothermal process and ultrasound pretreated hydrothermal process. ZnO/$SnO_2$ urchins were fabricated in the precursor solution with [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 and rod structures were fabricated ratio of 1:1 and 1:3. Surface area ratio was increased by increasing the ratio of [$Sn^{4+}$]. The sensitivity of sensors were highest at the [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 in ethanol, acetaldehyde, toluene, and nitric oxide.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.3
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• pp.111-119
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• 2018

We report the post-annealing effect of Sn doped ZnO (ZnO:Sn) thin film grown on sapphire (001) substrate using radio-frequency powder sputtering method. During thermal annealing in a vacuum atmosphere, the ZnO:Sn thin film is transformed into a porous thin film. Based on X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analyses, a possible mechanism for the production of pores is presented. Sn atoms segregate to form clusters that act as catalysts to dissociate Zn-O bonds. The Zn and O atoms subsequently vaporize, leading to the formation of pores in the ZnO:Sn thin film. We also found that Sn clusters were oxidized to form SnO or $SnO_2$ phases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.41-44
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• 1997

Using the 2 probe mothods, AC coductivities, dielectric loss factors, capacitances, and impedances were investigated to study. The electrical and sensing properties for SnO$_2$ added ZnO. In air The electrical conductivity of SnO$_2$added ZnO decrease by increasing the content of SnO$_2$, and the relative dielectric constants for 0.05, 5, 7 SnO$_2$ added ZnO are 55, 20, 14, respectively. In 3000ppm CO Gas. relative dielectric constants for 3, 5mol% SnO$_2$ added ZnO are 163, 68, respectively.