• KIEE International Transactions on Electrophysics and Applications
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• 제5C권3호
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• pp.97-101
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• 2005

ZnO thin films were grown at different plume-substrate (P-S) angles of 90$^{\circ}$ (on-axis PLD), 45$^{\circ}$ and 0$^{\circ}$ (off-axis PLD) using pulsed laser deposition. The x-ray diffraction pattern exhibiting a dominant (002) and a minor (101) peak of ZnO indicates all films were strongly c-axis oriented. By observing of (002) peak, the FWHMs of ZnO (002) peaks decreased and c-axis lattice constant approached the value of bulk ZnO as P-S angle decreased. Whereas the carrier concentration of ZnO thin film deposited at P-S angle of 90$^{\circ}$ was ~ 10$^{19}$ /cm$^{3}$, the Hall measurement of ZnO thin films deposited at P-S angles of 0$^{\circ}$ and 45$^{\circ}$ was impossible due to the decrease of the carrier concentration by the improvement of stoichiometry and crystalline quality. By decreasing P-S angle, the grain size of the films and the UV intensity investigated by photoluminescence (PL) increased and UV peak position showed red shift. The improvement of properties in ZnO thin films deposited by off-axis technique was due to the decrease of repulsive force between a substrate and the particle in plume and the relaxation of supersaturation.

• 마이크로전자및패키징학회지
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• 제14권3호
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• pp.15-20
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• 2007

플라스틱 기판에 적용이 가능한 최대 공정온도 $270^{\circ}C$ 이하에서 ZnO-TFT 소자를 제작하였다. ZnO-TFT 소자는 bottom gate 구조로 제작되었으며, ICP-CVD로 형성된 $SiO_2$ 산화물 게이트 공정을 제외하고는 모든 박막증착 공정은 RF-magnetron sputtering process를 이용하였다. ZnO 박막은 Ar과 $O_2$ gas 유량의 비율에 따라 여러 가지 조건에서 RF-magnetron sputtering 시스템을 이용하여 상온에서 증착하였다. Ar과 $O_2$ gas의 비율에 따라 제작된 TFT 소자는 모두 enhancement 모드의 소자특성을 나타내었고, 또한 가시광선영역에 있어 80% 이상의 높은 투과율을 보였다. ZnO 증착시 순수 Ar을 사용하여 제작된 ZnO-TFT의 경우에, $1.2\;cm^2/Vs$의 field effect mobility, 8.5 V의 threshold voltage, 그리고 $5{\times}10^5$의 높은 on/off ratio, 1.86 V/decade의 swing voltage로 가장 우수한 전기적 특성을 보였다.

• 한국표면공학회지
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• 제41권4호
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• pp.169-173
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• 2008

The objective of this study is to coat the $SiO_2$ layer uniformly on the ZnS:Cu phosphors by using Sol-Gel method. From results of SEM micrographs observation, XRD and XPS analysis, it could be confirmed that $SiO_2$ layer was relatively well coated on ZnS:Cu particles. $Ag_2S$ was used as a decoding chemical to analyze the dense and uniform coating performance of $SiO_2$ layer on phosphor particles. It could be concluded that phosphors synthesized from our two step replacement method showed strong blue peak comparing to other method and rather weak green peak also. Obtained particle size of phosphors were about 20m diameter. Luminescence properties of the phosphors were examined by photoluminescence spectra at the excitation wavelength of 270 nm.

• 한국재료학회지
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• 제15권5호
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• pp.293-300
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• 2005

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at $400^{\circ}C$. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are $2.69\times10cm^{-3}$ and $52.137cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, $E_g(T)=3.5128eV{\cdot}(9.51\times10^{-4}eV/K)T^2/(T+280K)$. After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of $V_{zn},\;V_o,\;Zn_{int},\;and\;O_{int}$ showned on PL spectrum are classified as a donors or accepters type. We confirm that $ZnO:Li/Al_2O_3$ in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.429-429
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• 2008

The structural stability and the elastic modulus of hexagonal ZnO nanowires and nanotubes are investigated using atomistic simulations based on the shell model. The ZnO nanowire with (10-10) facets is energetically more stable than that with (11-20). Our calculations indicate that the structural change of ZnO nanowires with (10-10) facets is sensitive to the diameter. With decreasing the diameter of ZnO nanowires, the unit-cell length is increased while the bond-length is reduced due to the change of surface atoms. Unlike the conventional layered nanotubes, the energetic stability of single crystalline ZnO nanotubes is related to the wall thickness. The potential energy of ZnO nanotubes with fixed outer and inner diameters decreases with increasing wall thickness while the nanotubes with same wall thickness are independent of the outer and inner diameters. The transformation of single crystalline ZnO nanotubes with double layer from wurtzite phase to graphitic suggests the possibility of wall-typed ZnO nanotubes. The size-dependent Young's modulus for ZnO nanowires and nanotubes is also calculated. The diameter and the wall thickness play a significant role in the Young's modulus of single crystalline ZnO nanowires and nanotubes, respectively.

• Advances in nano research
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• 제5권3호
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• pp.193-201
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• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

• 센서학회지
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• 제29권3호
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• pp.156-161
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• 2020

In this study, hierarchical mesoporous CuO spheres, ZnO flowers, and heterojunction CuO/ZnO nanostructures were fabricated via a facile hydrothermal method. The as-prepared materials were characterized in detail using various analytical methods such as powder X-ray diffraction, micro Raman spectroscopy, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and transmission electron microscopy. The obtained results are consistent with each other. The H₂S-sensing characteristics of the sensors fabricated based on the CuO spheres, ZnO flowers, and CuO/ZnO heterojunction were investigated at different temperatures and gas concentrations. The sensor based on ZnO flowers showed a maximum response of ~141 at 225 ℃. The sensor based on CuO spheres exhibited a maximum response of 218 at 175 ℃, whereas the sensor based on the CuO/ZnO nano-heterostructure composite showed a maximum response of 344 at 150 ℃. The detection limit (DL) of the sensor based on the CuO/ZnO heterojunction was ~120 ppb at 150 ℃. The CuO/ZnO sensor showed the maximum response to H₂S compared with other interfering gases such as ethanol, methanol, and CO, indicating its high selectivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.160-162
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• 2003

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The substrate temperatures was $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}\;and\;299\;cm^2V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T\;+\;463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, Vo, $Zn_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type.

• 청정기술
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• 제25권1호
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• pp.46-55
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• 2019

CdS 및 CdZnS/ZnO를 침전법으로 제조하여 가시광선하에서의 로다민 B의 광분해 반응에 대한 광촉매로 이용하였다. 제조된 광촉매들은 X선 회절분석기와 UV-vis 확산반사 분광법 등으로 특성을 분석하였으며, 그 결과 원하는 결정구조를 지닌 광촉매들이 생성되었으며 또한 CdS 및 CdZnS/ZnO 두 가지 광촉매 모두 자외선뿐만 아니라 가시광선 영역의 빛도 효율적으로 흡수함을 알 수 있었다. 여러 종류의 활성 화학종에 대한 포집제들을 첨가하면서 각각의 광촉매에 대한 활성을 조사하였으며, 특히 두 가지 촉매상에서의 반응기구 차이점에 중점을 두고 고찰하였다. 이때 $CH_3OH$, KI 및 p-benzoquinone을 각각 ${\cdot}OH$ 라디칼, 광여기 정공 그리고 ${\cdot}O_2{^-}$ 라디칼에 대한 포집제로 이용하였다. 각각의 광촉매상에서는 서로 다른 반응기구에 의해서 반응이 진행되는 것으로 나타났다. CdS 광촉매 반응에서는 ${\cdot}O_2{^-}$ 라디칼이 그리고 CdZnS/ZnO 광촉매 반응에 있어서는 광여기 정공이 중요한 역할을 하는 것으로 판단되며, 따라서 CdS와 CdZnS/ZnO 각각의 광촉매상에서는 발색단 골격의 탈알킬화 반응 및 발색단 콘쥬케이트 구조의 절단 과정을 통하여 반응이 우선적으로 진행된다는 것을 알 수 있었다. 이러한 결과들은 CdS, CdZnS 그리고 ZnO 각각 반도체들의 전도대와 가전자대의 띠끝 전위와 활성 화학종 생성에 대한 산화환원 전위의 차이에 주로 기인한 것으로 생각된다.

• 한국결정성장학회지
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• 제24권2호
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• pp.70-76
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• 2014

아연결정유약에 Anatase 형 $TiO_2$에 의해 생성되는 $Zn_2TiO_4$가 효과적인 결정 생성제로 나타났다. 이에 저온에서 생성되는 $Zn_2TiO_4$를 인위적으로 합성하여 유약의 미치는 효과를 규명하였다. 첨가 $Zn_2TiO_4$는 저온에서 생성되는 결정으로 아연결정 W의 핵으로 작용하는 것으로 밝혀졌다. 합성된 $Zn_2TiO_4$를 유약에 5 wt% 첨가하면 유약 내에 결정생성이 증가하며 안정적으로 유지된다. 특히, $Zn_2TiO_4$ 합성 시 발색제로 CoO, NiO, CuO를 각각 고용시켜 유약에 첨가하면 발색제의 고용효과가 커져 Willemite 결정의 다양한 발색에 큰 효과를 얻을 수 있다.