• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.308-311
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• 2015

V₂O₅/Mn₃O₄/Nb₂O₅ codoped zinc oxide varistor ceramics were sintered at a temperature range as low as 875~950℃. The voltage clamping characteristics of V₂O₅/Mn₃O₄/Nb₂O₅ codoped zinc oxide varistor ceramics were investigated at a pulse current range of 1~50 A. The sintering temperature had a significant effect on clamp voltage ratio, which exhibits surge protection capabilities. The varistor ceramics sintered at 875℃ exhibited the best clamping characteristics, in which the clamp voltage ratio was 2.69 at a pulse current of 50 A. The varistor ceramics sintered at 900℃ exhibited the highest electrical stability, where = 3,824 V/cm (initial 3,909 V/cm), and E_{1 mA/cm²} = 27 (initial 39) after application of a pulse current of 100 A.

• Restorative Dentistry and Endodontics
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• 제16권2호
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• pp.118-125
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• 1991

Eighty - eight recently extracted teeth were used to evaluate the leakage characteristics of the following retrofilling materials; amalgam, zinc oxide eugenol cement, glass - ionomer cement, and cermet glass - ionomer cement. Root canals were prepared with step - back method and obturated with gutta percha and zinc oxide eugenol sealer. Root apex were resected 2 mm from apex and class I cavities were prepared with 2 mm or 4 mm depth. The cavities were filled with above materials. After application of varnish on all surface except resected surface, the roots were placed in 1 % methylene blue solution for 6 days. After longitudinal polishing to expose cental parts of filled materials, penetrated depths of dye were measured. The results were as follws. 1. As retrofilling material, glass ionomer cement filling groups showed less leakage than the other groups except zinc oxide eugenol cement filling group(p<0.01). 2. Amalgam filling groups had greater leakage than zinc oxide eugenol cement filling group(p<0.01). 3. 4 mm depth of retrofilled cavity had no effect on leakage characteristics compared with 2 mm depth cavity(p>0.05). 4. Glass ionomer cement and cermet glass ionomer cement filling groups showed less apical leakage than amalgam filling groups. But there was no statistical significance(p>0.05). 5. There was no difference in apical leakage between glass ionomer cement filling groups and cermet glass ionomer cement filling groups(p>0.05).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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• pp.22-24
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• 2003

In this work, in order to investigate the effect of multiple lightning impulse currents on zinc oxide arrester blocks. We have been designed and fabricated a multi-impulse generator which can produce quintuple voltages with $1.2/50{\mu}s$ to 100kV and quintuple currents with $8/20{\mu}s$ to 12kA and we have evaluated the characteristics of zinc oxide arrester block using several electrical and physical methods after the multi-impulse test. It was found that the multi-impulse failures of ZnO arrester blocks were mainly caused by surface flashover and the multi-impulse currents test would be more suitable than single impulse current test in evaluation of the characteristics of zinc oxide arrester blocks corresponding to actual situations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.159-159
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• 2008

투명전도체 (transparent conducting oxides: TCOs) 는 일반적으로 $10^3\Omega^{-1}Cm^{-1}$의 전도도, 가시광 영역에서 80%이상의 투명성을 가지는 재료로서, 액정 박막 표시 장치(TFT-LCD), 광기전성 소자, 유기 발광 소자, 에너지 절약 창문, 태양전지(sollar cell) 등 전극으로 사용되고 있다. 최근에는 TCO의 전도도특성을 조절하여 반도성특성을 가진 투명 산화물 반도체(transparent oxide semiconductor: TOS) 을 이용한 박막 트랜지스터 연구가 활발히 진행 중이다. 기존의 실리콘을 기반으로 하는 박막 트랜지스터의 낮은 이동도, 불투명성의 특성을 가지고 있지만, 산화물 박막트랜지스터는 높은 이동도를 발현 할 수 있을 뿐만 아니라, 넓은 밴드갭 에너지를 갖는 산화물을 이용하므로 투명한 특성도 발현 할 수 있어 차세대 디스플레이의 구동소자로서 응용연구가 되고 있다. 이에 본 연구에서는 박막트랜지스터 channel layer로서의 Indium-Tin-Zinc oxide 적용특성을 조사하였다. Indium, Tin, Zinc 의 혼합비율을 다양하게 조절하여 타겟을 제작하였다. 이를 RF magnetron sputtering 를 이용하여 박막으로 성장시켰으며, 기판으로는 glass 기판을 사용하였다. 박막 성장시 아르곤과 산소의 비율을 다양하게 조절하였다. 성장시킨 박막은 Hall effect, Transmittance, Work function, XRD등을 이용하여 전기적, 광학적, 구조특성을 평가하였다. Indium-Tin-Zinc Oxide(ITZO) 을 channel layer로 사용하여 Thin-film transistor 을 제작하여, TFT의 I-V 및 stability특성을 평가하였다.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2011년도 춘계학술논문집 1부
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• pp.327-331
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• 2011

Zinc oxide (5, 10 and 15 wt%) impregnated NaZSM-5 zeolite synthesized using rice husk ash as silica source was tested for $CO_2$ adsorption. The materials were characterized by XRD, SEM-EDS, $CO_2$-TPD and BET techniques. The heat of the reaction (${\Delta}$Hr) derived from DSC for ZnO(10%)/NaZSM-5 was found to be 495 Btu/lb and the maximum $CO_2$ adsorption capacity of ZnO(10%)/NaZSM-5 is 140 mg/g of sorbent. Extraction of silica from the agricultural waste, rice husk and its use in the zeolite synthesis is an added advantage in this study. Hence, from the study it is concluded that zinc oxide impregnated NaZSM-5 could be treated as novel material for $CO_2$ adsorption as they were found to be regenerable, selective and recyclable.

• Restorative Dentistry and Endodontics
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• 제16권1호
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• pp.25-40
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• 1991

Four root canal sealers, Apatite Root Sealer I and II composed mainly of hydroxyapatite/tricalciumphosphate, Sealapex containing calcium hydroxide, and Roth Sealer composed of zinc oxide - eugenol were compared on the culture of L929 fibroblasts. MIT (Methyl Thiazole Tetrazolium Bromide) colorimetric technique was used to measure the mitochondrial dehydrogenase activity. Results were as follows: 1. Hydroxyapatite/tricalcium phosphate mixed sealers were significantly less toxic compared with calcium hydroxide and zinc oxide - eugenol type sealers. High pH of the calcium hydroxide sealer and release of eugenol component from the zinc oxide - eugenol type sealer were presumed to be the cause of the toxicity of these two sealers. In no cases, there were more cytoblastic effects in hydroxyapatite/tricalcium phosphate mixed sealers compared to the control groups. 2. In all experimental groups, toxicity was decreased as dilutions were increased. However in zinc oxide-eugenol type sealer the cell activity was weakened for all dilution groups. 3. Regarding the effect of setting time, Apatite I and Sealapex were less toxic as the setting progressed. Apatite II kept constant regardless of the different time ellapsed after setting but Roth sealer revealed significantly higher toxicity for all experimental groups. 4. Comparing two different culture periods of 24 hours and 72 hours, Apatite I showed higher cell activities in longer period(72 hours) while Apatite II did not. Sealapex and Roth sealer, however, showed significantly lower cell activities in longer period.

• 한국표면공학회지
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• 제41권1호
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• pp.6-11
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• 2008

An Indium Zinc Oxide(IZO) transparent conductive layer was deposited on a large size glass substrate by using magnetron dc sputtering method with varying a deposition temperature. As the deposition temperature decreased to a room temperature, the sheet resistance of IZO film increased. But this deposition temperature range is included in an applicable to a device. From a standpoint of the sheet resistance, the differences of the sheet resistance were not great and the uniformity of the layer was uniformed around 10%. Crystallization particles were shown on the surface of the layer as deposition temperature increased, but these particles were not shown on the surface of the layer as deposition temperature decreased to the room temperature. It didn't make a scrap of difference in a transmittance of varying deposition temperature. Therefore, it is concluded that IZO thin film manufactured by the room temperature deposition condition can be used as a large size transparent conductive layer of a liquid crystal display device.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.659-667
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• 1997

The influence of SiO$_2$on the microstructure and electrical properties of zinc oxide varistor was investigated. Zn$_2$SiO$_4$third phase in the sintered body was found at grain boundaries, multiple grain junctions, and occasionally within ZnO grains. This phase acted as a grain growth inhibitor, which retard the grain growth of the ZnO matrix by impeding migration on the grain boundaries. As SiO$_2$ addition increases, average grain size decreased from 40.6${\mu}{\textrm}{m}$ to 26.9${\mu}{\textrm}{m}$ due to the pinning effect by Zn$_2$SiO$_4$ and drag effect by Si segregation at grain boundaries, the breakdown voltage consequently increased. When SiO$_2$ addition is increased, interface state density decreased, however, the barrier height increased by decrease of donor concentration, as a result, the nonlinear exponent increased and leakage current decreased. While, as SiO$_2$ addition increase, it was found that the apparent dielectric loss factor shows a tendency of decrease. Wholly, electrical properties of zinc oxide varistor can be said to be improved by SiO$_2$addition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.446-447
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• 2007

The rapid thermal annealing effect of transparent IZTO(indium zinc oxide) and IAZO(indium alminium zinc oxide) films grown on glass substrate for solar cell or flat panel displays(FPDs) was studied. We prepared IZTO using RF magnetron sputtering and IAZO using DC co-sputtering method. Subsequently, using rapid thermal annealing(RTA) system, prepared IZTO and IAZO films were annealed at 300, 400, 500, $600^{\circ}C$ for 90sec. In addition, Electrical and optical characteristics were measured by Hall effect measurement and UV/Vis spectrometer examinations, respectively. To analyze structural properties and surface smoothness of the IZTO and IAZO films, XRD and SEM examinations were performed, respectively. It was shown that IZTO and IAZO films exhibited microcrystalline structure over $400^{\circ}C$ and amorphous structural regardless of RTA temperature, respectively.

• 반도체디스플레이기술학회지
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• 제17권2호
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• pp.57-60
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• 2018

Recently, Thin-film transistors (TFTs) are fundamental building blocks for state-of-the-art microelectronics, such as flat-panel displays and system-on-glass. Zinc oxide thin films have the advantage that they can grow at low temperature and can obtain high charge movility. Also the zinc oxide thin film can be used to control the resistance according to the oxygen content, so it is very easy to obtain the desired physical properties. In this paper, we fabricated a zinc oxide thin film on a polished copper substrate through a solution process, then improved the crystallinity through a geat treatment porcess, and studied to transfer it on a flexible substrate after the heat treatment was completed.