• 한국재료학회지
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• 제18권10호
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• pp.529-534
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• 2008

The hydrogen gas sensing properties of a zinc oxide nanowire structure were studied. Porous zinc oxide nanowire structures were fabricated by oxidizing zinc deposited on a single-wall carbon nanotube (SWNT) template. This revealed a porous ZnO-SWNT composite due to the porosity in the SWNT film. The gas sensing properties were compared with those of zinc oxide thin films deposited on SiO2/Si substrates in sensitivity and operating temperature. The composite structure showed higher sensitivity and lower operating temperature than the zinc oxide film. It showed a response even at room temperature while the film structure did not.

• 한국재료학회지
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• 제26권6호
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• pp.311-319
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• 2016

In this study, an environment-friendly synthetic strategy to process zinc oxide nanocrystals is reported. The biosynthesis method used in this study is simple and cost-effective, with reduced solvent waste via the use of fruit peel extract as a natural ligation agent. The formation of ZnO nanocrystals using a rambutan peel extract was observed in this study. Rambutan peels has the ability to ligate zinc ions as a natural ligation agent, resulting in ZnO nanochain formation due to the presence of an extended polyphenolic system over the whole incubation period. Via transmission electron microscopy, successful formation of zinc oxide nanochains was confirmed. TEM observation revealed that the bioinspired ZnO nanocrystals were spherical and/or hexagonal particles with sizes between 50 and 100 nm.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.676-677
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• 2006

Synthesis of zinc oxide nanorods, sheets and flower like structure were done by the sol-gel method using zinc acetate dihydrate and sodium hydroxide at $80^{\circ}C$ with 12 hours refluxing time nanorods, in case of as synthesized powder, with diameter of 20-60nm. Annealing at higher temperature (300 and $500^{\circ}C$,) in air ambient changes the morphology to sheet and flower like structure. The standard peak of zinc oxide was observed in IR at $523cm^{-1}$. The UV-VIS spectroscopy of zinc oxide shows a characteristic peak at 375nm.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.543-551
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• 2012

In this study, transparent conducting Al-doped Zinc Oxide (AZO) films with a thickness of 150 nm were prepared on corning glass substrate by the RF magnetron sputtering with using a Al-doped zinc oxide (AZO), ($Al_2O_3$: 2 wt%) target at room temperature. This study investigated the effect of rapid thermal annealing temperature and oxygen ambient on structural, electrical and optical properties of Al-doped zinc oxide (AZO) thin films. The films were annealed at temperatures ranging from 400 to $700^{\circ}C$ by using Rapid thermal equipment in oxygen ambient. The effect of RTA treatment on the structural properties were studied by x-ray diffraction and atomic force microscopy. It is observed that the Al-doped zinc oxide (AZO) thin film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas reveals the strongest XRD emission intensity and narrowest full width at half maximum among the temperature studied. The enhanced UV emission from the film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas is attributed to the improved crystalline quality of Al-doped zinc oxide (AZO) thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.207.2-207.2
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• 2013

Oxide-based thin film transistors have been attempted as powerful candidates for driving circuits for active-matrix organic light-emitting diodes and transparent electronics. The oxide TFTs are based on the amorphous multi-component oxides involving zinc, indium, and/or tin elements as main cation sources. The current work employed RF sputtering in order to deposit zinc-tin oxide thin films applicable to transparent oxide thin film transistors. The deposited thin film was characterized and probed in terms of materials and devices. The physical/chemical characterizations were performed using X-ray diffraction, Atomic Force Microscopy, Spectroscopic Ellipsometry, and X-ray Photoelectron Spectroscopy. The thin film transistors were fabricated using a bottom-gated structure where thermally-grown silicon oxide layers were applied as gate-dielectric materials. The inherent properties of oxide thin films are combined with the corresponding device performances with the aim to fabricating the multi-component oxide thin films being optimized towards transparent electronics.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.6-11
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• 2019

For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO₄ laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.

• 한국전기전자재료학회논문지
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• 제28권7호
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.10-10
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• 2009

We have fabricated transparent and flexible thin film transistor(TFT) on polyethylene terephthalate(PET) substrate using Zinc Oxide (ZnO) and Indium Tin Oxide (ITO) film as active layer and electrode. The transfer printing method was used for printing the device layer on target plastic substrate at room temperature. This approach have an advantage to separate the high temperature annealing process to improve the electrical properties of ZnO TFT from the device process on plastic substrate. The resulting devices on plastic substrate presented mechanical and electrical properties similar with those on rigid substrate.

• International journal of advanced smart convergence
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• 제1권1호
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• pp.61-64
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• 2012

The ultraviolet and visible light responsive properties of the amorphous indium gallium zinc oxide thin film transistor have been investigated. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistor operate in the enhancement mode with saturation mobility of $6.99cm^2/Vs$, threshold voltage of 13.5 V, subthreshold slope of 1.58 V/dec and an on/off current ratio of $2.45{\times}10^8$. The transistor was subsequently characterized in respect of visible light and UV illuminations in order to investigate its potential for possible use as a detector. The performance of the transistor is indicates a high-photosensitivity in the off-state with a ratio of photocurrent to dark current of $5.74{\times}10^2$. The obtained results reveal that the amorphous indium gallium zinc oxide thin film transistor can be used to fabricate UV photodetector operating in the 366 nm.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.896-901
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• 2005

The microstructure and electrical properties of praseodymium-based zinc oxide varistors were investigated at various cobalt oxide contents in the range of $0.5{\~}5.0 mol\%$. The ceramic density increased in the range of $5.25{\~}5.55 g/cm^3$ with increasing cobalt oxide content. The varistor doped with cobalt oxide of $1.0 mol\%$ exhibited the highest nonlinearity, with 66.6 in nonlinear exponent and 1.2 $\mu$A in leakage current. The donor concentration, density of interface states, and tamer height were in the range of $(1.06{\~}1.69){\times}10^{18}/cm^3$, $(3.11 {\~}3.56){\times}10^{12}/cm^2$, and 0.80${\~}$1.07 eV, respectively.