• Journal of Surface Science and Engineering
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• v.33 no.4
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• pp.229-232
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• 2000

C-axis oriented zinc oxide thin films were deposited on glass substrate by reactive Facing Targets Sputtering (FTS) system. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alphastep (Tencor) analyses. The Facing Targets Sputtering system can deposit thin film in plasma-free situation and change the deposition condition in wide range. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature $300^{\circ}C$, inter targets distance 100mm. In the conditions, the rocking curve of zinc oxide thin films deposited on ZnO/Glass was $3.9^{\circ}$.

• Resources Recycling
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• v.15 no.4 s.72
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• pp.44-51
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• 2006

Most electric arc furnace dust (EAFD) treatment processes to recover zinc from EAFD employ carbon as a reducing agent for the zinc oxide in the EAFD. In the present work, the reduction reaction of zinc oxide with carbon in the present of iron oxide was kinetically studied. The experiments were carried out at temperatures between 1173 K and 1373 K under nitrogen atmosphere using a weight-loss technique. From the experimental results, it was concluded that adding the proper amount of iron oxide to the reactant accelerates the reaction rate of zinc oxide with carbon. This is because iron oxide in the reduction reaction of zinc oxide with carbon promotes the carbon gasification reaction. The spherical shrinking core model for a surface chemical reaction control was found to be useful in describing kinetics of the reaction over the entire temperature range. The reaction has an activation energy of 53 kcal/mol (224 kJ/mol) for ZnO-C reaction system, an activation energy of 42 kcal/mol (175 kJ/mol) for $ZnO-Fe_{2}O_{3}-C$ reaction system, and an activation energy of 44 kcal/mol (184 kJ/mol) for ZnO-mill scale-C reaction system.

• Asian-Australasian Journal of Animal Sciences
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• v.17 no.12
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• pp.1635-1640
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• 2004

Two experiments were conducted to evaluate developmental gene expression of antimicrobial peptide PR-39 and effect of zinc oxide on gene regulation of PR-39 in piglets using semi-quantitative RT-PCR analysis. In experiment 1, fifteen female Tai-Hu pigs (a local breed in China) in five groups, each of three pigs at 1, 14, 28, 42 and 56 days of age were used to determine effect of age and weaning on mRNA expression of PR-39. In experiment 2, nine groups of pigs (total seventy-two female 36 days-age weanling Tai-Hu piglets) were assigned to three treatments (${ZnO}_0$, ${ZnO}_{100}$ and ${ZnO}_{3000}$). The feeding experimental period lasted 15 days. After feeding experiment, nine pigs with three animals in each treatment were chosen to determine the effect of ZnO on PR-39 mRNA expression of pigs. The results showed that PR-39 mRNA levels increased steadily in postnatal day 1-28 (preweaning), and weaning significantly decreased PR-39 mRNA expression of piglets (p<0.05). ${ZnO}_{3000}$ (3,000 mg zinc/kg diet) significantly increased PR-39 mRNA expression (p<0.05) when piglets were feed ${ZnO}_{3000}$ diet for 15 days. ${ZnO}_{100}$ (100 mg zinc/kg diet) also increased PR-39 gene expression, but the result was not statistically significant (p>0.05). The result was in accordance with the effect of ${ZnO}_{3000}$ and ${ZnO}_{100}$ on weight gain of piglets and prevention of diarrhea.

• Toxicological Research
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• v.35 no.1
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• pp.83-91
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• 2019

Nanoparticles (NPs) have been recognized as both useful tools and potentially toxic materials in various industrial and medicinal fields. Previously, we found that zinc oxide (ZnO) NPs that are neurotoxic to human dopaminergic neuroblastoma SH-SY5Y cells are mediated by lipoxygenase (LOX), not cyclooxygenase-2 (COX-2). Here, we examined whether human bone marrow-derived mesenchymal stem cells (MSCs), which are different from neuroblastoma cells, might exhibit COX-2- and/or LOX-dependent cytotoxicity of ZnO NPs. Additionally, changes in annexin V expression, caspase-3/7 activity, and mitochondrial membrane potential (MMP) induced by ZnO NPs and ZnO were compared at 12 hr and 24 hr after exposure using flow cytometry. Cytotoxicity was measured based on lactate dehydrogenase activity and confirmed by trypan blue staining. Rescue studies were executed using zinc or iron chelators. ZnO NPs and ZnO showed similar dose-dependent and significant cytotoxic effects at concentrations ${\geq}15{\mu}g/mL$, in accordance with annexin V expression, caspase-3/7 activity, and MMP results. Human MSCs exhibited both COX-2 and LOX-mediated cytotoxicity after exposure to ZnO NPs, which was different from human neuroblastoma cells. Zinc and iron chelators significantly attenuated ZnO NPs-induced toxicity. Conclusively, these results suggest that ZnO NPs exhibit both COX-2- and LOX-mediated apoptosis by the participation of mitochondrial dysfunction in human MSC cultures.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• Korean Journal of Materials Research
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• v.30 no.5
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• pp.239-245
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• 2020

Synthesizing one-dimensional nanostructures of oxide semiconductors is a promising approach to fabricate highefficiency photoelectrodes for hydrogen production from photoelectrochemical (PEC) water splitting. In this work, vertically aligned zinc oxide (ZnO) nanorod arrays are successfully synthesized on fluorine-doped-tin-oxide (FTO) coated glass substrate via seed-mediated hydrothermal synthesis method with the use of a ZnO nanoparticle seed layer, which is formed by thermally oxidizing a sputtered Zn metal thin film. The structural, optical and PEC properties of the ZnO nanorod arrays synthesized at varying levels of Zn sputtering power are examined to reveal that the optimum ZnO nanorod array can be obtained at a sputtering power of 20 W. The photocurrent density and the optimal photocurrent conversion efficiency obtained for the optimum ZnO nanorod array photoanode are 0.13 mA/㎠ and 0.49 %, respectively, at a potential of 0.85 V vs. RHE. These results provide a promising avenue to fabricating earth-abundant ZnO-based photoanodes for PEC water oxidation using facile hydrothermal synthesis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.682-688
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• 2009

A periodic away of zinc oxide(ZnO) micro-rods as fabricated by using chemical bath deposition and photo-lithography. Vertically aligned ZnO micro-rods array was successfully grown by chemical bath deposition method on ZnO seed layer. The ZnO seed layer was deposited on glass and the patterning was made by standard photo-lithography technique. The selective growth of ZnO micro-rods as achieved with the masked ZnO seed layer. The fabricated ZnO micro rods were found to be single crystalline and have grown along hexagonal c-axis direction of (0002) which is same as the preferred growth orientation of ZnO seed layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.211.1-211.1
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• 2013

We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.

• Journal of Sensor Science and Technology
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• v.31 no.2
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• pp.125-130
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• 2022

We describe the importance of zinc oxide nanoparticle (ZnO NP) concentration in the enhancement of electrical properties in a lead sulfide quantum dot (PbS QD)-based shortwave infrared (SWIR) photodetector. ZnO NPs were synthesized using the sol-gel method. The concentration of the ZnO NPs was controlled as 20, 30 and 40 mg/mL in this study. Note that the ZnO NPs layer is commonly used as an electron transport layer in PbS QDs SWIR photodetectors. The photo-to-dark ratio, which is an important parameter of a photodetector, was intensively examined to evaluate the electrical performance. The 20 mg/mL condition of ZnO NPs exhibited the highest photo-to-dark ratio value of 5 at -1 V, compared with 1.8 and 0.4 for 30 mg/mL and 40 mg/mL, respectively. This resulted because the electron mobility decreased when the concentration of ZnO NPs was higher than the optimized value. Based on our results, the concentration of ZnO NPs was observed to play an important role in the electrical performance of the PbS QDs SWIR photodetector.

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.257-260
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• 2010

Zinc oxide (ZnO) bottom-contact thin-film transistors (TFTs) were prepared by the use of injector type atomic layer deposition. Two hybrid gate oxide systems of different polarity polymers with silicon oxide were examined with the aim of improving the properties of the transistors. The mobility and threshold voltage of a ZnO TFT with a poly(4-dimethylsilyl styrene) (Si-PS)/silicon oxide hybrid gate dielectric had values of 0.41 $cm^2/Vs$ and 24.4 V, and for polyimide/silicon oxide these values were 0.41 $cm^2/Vs$ and 24.4 V, respectively. The good hysteresis property was obtained with the dielectric of hydrophobicity. The solid output saturation behavior of ZnO TFTs was demonstrated with a $10^6$ on-off ratio.