• 제목/요약/키워드: Zero bias

검색결과 131건 처리시간 0.029초

비-가우시안 잡음하의 적응 시스템을 위한 바이어스된 영-오차확률 (Biased Zero-Error Probability for Adaptive Systems under Non-Gaussian Noise)

  • 김남용
    • 인터넷정보학회논문지
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    • 제14권1호
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    • pp.9-14
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    • 2013
  • 영-오차확률 성능 기준은 오차 샘플들이 직류 바이어스 잡음의 영향을 받을 때 적응 시스템에 사용되기에는 제약이 따른다. 이 논문에서는 바이어스 변수를 오차 분포에 도입하고 바이어스된 오차확률에서 오차를 0 으로 하여 새로운 성능 기준인 바이어스된 영-오차확률을 제안하였다. 또한, 확장 필터 구조를 기반으로 제안된 성능 기준을 최대화 함으로써 적응 알고리듬을 도출하였다. 통신 채널 등화에 대한 시뮬레이션 결과로부터 제안된 성능기준에 기반한 이 알고리듬이 강한 충격성 잡음과 직류-바이어스 잡음의 환경에서 동요 없이 오차 샘플들을 0 으로 집중시키는 성능을 보였다.

Experimental investigation on the degradation of SiGe LNAs under different bias conditions induced by 3 MeV proton irradiation

  • Li, Zhuoqi;Liu, Shuhuan;Ren, Xiaotang;Adekoya, Mathew Adefusika;Zhang, Jun;Liu, Shuangying
    • Nuclear Engineering and Technology
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    • 제54권2호
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    • pp.661-665
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    • 2022
  • The 3 MeV proton irradiation effects on SiGe low noise amplifier (LNA) (NXP BGU7005) performance under different voltage supply VCC (0 V, 2.5 V) conditions were firstly experimental studied in this present work. The S parameters including S11, S22, S21, 1 dB compression point and noise figure (NF) of the test samples under different bias voltage supply were measured and compared before and after 3 MeV proton irradiation. The total proton irradiation fluence was 1 × 1015 protons/cm2. The maximum degradation quantities of the gain S21 and NF of the test samples under zero bias are measured respectively 1.6 dB and 1.2 dB. Compared with the samples under 2.5 V bias supply, the maximum degradation of S21 and NF are respectively 1.1 dB and 0.8 dB in the whole frequency band. It is noteworthy that the gain and NF of SiGe LNAs under zero-bias mode suffer enhanced degradation compared with those under normal bias supply. The key influence factors are discussed based on the correlation of the SiGe device and the LNA circuit. Different process of the ionization damage and displacement damage under zero-bias and 2.5 V bias voltage supply contributed to the degradation difference. The underlying physical mechanisms are analyzed and investigated.

초전도체와 d-wave 초전도체 근접효과 접합에서의 터널링 상태밀도함수 (Tunneling Density of States in Superconductor/d-wave Superconductor Proximity Junction)

  • Lee, H. J.;Yonuk Chong;J. I. Kye;Lee, S. Y.;Z.G. Khim
    • Progress in Superconductivity
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    • 제2권2호
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    • pp.57-64
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    • 2001
  • We have calculated the tunneling density of states (TDOS) of a metal/d-wave superconductor proximity junction, where the metal stands fur the normal metal, 5-wave superconductor, and d-wave superconductor. The tunneling direction is through the ab-plane of the d-wave superconductor. Because of the sign change in the order parameter experienced in the multiple Andreev reflection, there appears a finite TDOS at zero bias for duty geometry, which results in the anomalous zero bias conductance peak(ZBCP). For $d_{x2-y2}$ geometry, however, no TDOS peak appears at zero bias. We have calculated TDOS for various crystal orientation of HTSC and compared with the experimental conductance.

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지불거부응답의 판별 (Detecting Protest Responses)

  • 오형나
    • KDI Journal of Economic Policy
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    • 제34권1호
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    • pp.135-168
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    • 2012
  • 조건부가치측정법(contingent valuation method)은 비시장재의 경제적 가치를 추정하는 방법의 하나로, 공공사업의 경제적 편익을 계산하는 데 이용되어 왔다. 지불거부응답(protest responses)은 본인의 선호와 상관없이 설문과정에서 공공사업에 대해 단 1원도 지불할 의사가 없다고 응답하는 행동으로, 전체 CVM 응답의 25% 정도를 차지한다. 본 연구는 평가 대상이 된 공공재의 가치 추정에 있어 지불거부응답 행동에 의한 편의(bias)를 최소화하기 위해, 자신의 선호에 의해 지불의사액이 '0'이라고 답한 응답으로부터 지불거부응답을 판별해 내는 문항(protest response filtering items)과 그 미시적 근거를 제시한다. 이를 위해 본 논문은 선호에 기반한 지불의사액을 '잠재적 지불의사액(implicit willingness-to-pay)'이라고 정의함으로써 설문과정에서 선호체계 이외에 다양한 요인이 작용하여 결정된 '구술된 지불의사액(stated willingness-to-pay)'과 구분하였다. 한편, 한국개발연구원(KDI)에서 주관한 20여 건의 CVM 데이터를 이용한 실증분석 결과에 의하면, 지불거부응답은 무작위가 아닌 응답자의 사회 경제적 특징에 의해 체계적으로 발생한다. 이는 지불거부응답을 공공재의 경제적 가치 추정에서 제외시킬 때 선택편의(selectivity bias)가 발생할 수 있음을 의미한다.

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A Novel Compensator for Eliminating DC Magnetizing Current Bias in Hybrid Modulated Dual Active Bridge Converters

  • Yao, Yunpeng;Xu, Shen;Sun, Weifeng;Lu, Shengli
    • Journal of Power Electronics
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    • 제16권5호
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    • pp.1650-1660
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    • 2016
  • This paper proposes a compensator to eliminate the DC bias of inductor current. This method utilizes an average-current sensing technique to detect the DC bias of inductor current. A small signal model of the DC bias compensation loop is derived. It is shown that the DC bias has a one-pole relationship with the duty cycle of the left side leading lag. By considering the pole produced by the dual active bridge (DAB) converter and the pole produced by the average-current sensing module, a one-pole-one-zero digital compensation method is given. By using this method, the DC bias is eliminated, and the stability of the compensation loop is ensured. The performance of the proposed compensator is verified with a 1.2-kW DAB converter prototype.

A Study on Bias Effect on Model Selection Criteria in Graphical Lasso

  • Choi, Young-Geun;Jeong, Seyoung;Yu, Donghyeon
    • Quantitative Bio-Science
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    • 제37권2호
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    • pp.133-141
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    • 2018
  • Graphical lasso is one of the most popular methods to estimate a sparse precision matrix, which is an inverse of a covariance matrix. The objective function of graphical lasso imposes an ${\ell}_1$-penalty on the (vectorized) precision matrix, where a tuning parameter controls the strength of the penalization. The selection of the tuning parameter is practically and theoretically important since the performance of the estimation depends on an appropriate choice of tuning parameter. While information criteria (e.g. AIC, BIC, or extended BIC) have been widely used, they require an asymptotically unbiased estimator to select optimal tuning parameter. Thus, the biasedness of the ${\ell}_1$-regularized estimate in the graphical lasso may lead to a suboptimal tuning. In this paper, we propose a two-staged bias-correction procedure for the graphical lasso, where the first stage runs the usual graphical lasso and the second stage reruns the procedure with an additional constraint that zero estimates at the first stage remain zero. Our simulation and real data example show that the proposed bias correction improved on both edge recovery and estimation error compared to the single-staged graphical lasso.

Dynamic Magneto-mechanical Behavior of Magnetization-graded Ferromagnetic Materials

  • Chen, Lei;Wang, Yao
    • Journal of Magnetics
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    • 제19권3호
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    • pp.215-220
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    • 2014
  • This study investigates the dynamic magneto-mechanical behavior of magnetization-graded ferromagnetic materials Terfenol-D/FeCuNbSiB (MF). We measure the dynamic magneto-mechanical properties as a function of the DC bias magnetic field ($H_{dc}$). Our experimental results show that these dynamic magneto-mechanical properties are strongly dependent on the DC bias magnetic field. Furthermore, the dynamic strain coefficient, electromechanical resonance frequency, Young's moduli, and mechanical quality factor of Terfenol-D/FeCuNbSiB are greater than those of Terfenol-D under a lower DC bias magnetic field. The dynamic strain coefficient increases by a factor of between one and three, under the same DC bias magnetic field. In particular, the dynamic strain coefficient of Terfenol-D/FeCuNbSiB at zero bias achieves 48.6 nm/A, which is about 3.05 times larger than that of Terfenol-D. These good performances indicate that magnetization-graded ferromagnetic materials show promise for application in magnetic sensors.

Two dimensional tin sulfide for photoelectric device

  • Patel, Malkeshkumar;Kim, Joondong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.389.1-389.1
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    • 2016
  • The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

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Spin injection and transport properties of Co/Au/Y$Ba_2$$Cu_3$$O_y$ tunnel junctions

  • Lee, Kiejin;Kim, Sunmi;Ishibashi, Takauki;Cha, Deokjoon
    • Progress in Superconductivity
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    • 제3권1호
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    • pp.70-73
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    • 2001
  • We report the spin injection and transport properties of three terminal devices of Co/Au/$YBa_2$$Cu_3$$O_{y}$(F/N/S) tunnel junctions by injection of spin-polarized quaiparticles using a cobalt ferromagnetic injector. The observed current gain depends on the thickness of Au interlayer and is directly related to the nonequilibrium magnetization due to spin relaxation effects. The tunnel characteristic of a F/N/S tunnel junctions exhibited a zero bias conductance peak (ZBCP). The suppression of the ZBCP was observed due to the suppression of Andreev reflection at the interface, which is due to the spin scattering processes at the interface between a ferromagnetic and a d-wave superconductor.r.

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Practice of causal inference with the propensity of being zero or one: assessing the effect of arbitrary cutoffs of propensity scores

  • Kang, Joseph;Chan, Wendy;Kim, Mi-Ok;Steiner, Peter M.
    • Communications for Statistical Applications and Methods
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    • 제23권1호
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    • pp.1-20
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    • 2016
  • Causal inference methodologies have been developed for the past decade to estimate the unconfounded effect of an exposure under several key assumptions. These assumptions include, but are not limited to, the stable unit treatment value assumption, the strong ignorability of treatment assignment assumption, and the assumption that propensity scores be bounded away from zero and one (the positivity assumption). Of these assumptions, the first two have received much attention in the literature. Yet the positivity assumption has been recently discussed in only a few papers. Propensity scores of zero or one are indicative of deterministic exposure so that causal effects cannot be defined for these subjects. Therefore, these subjects need to be removed because no comparable comparison groups can be found for such subjects. In this paper, using currently available causal inference methods, we evaluate the effect of arbitrary cutoffs in the distribution of propensity scores and the impact of those decisions on bias and efficiency. We propose a tree-based method that performs well in terms of bias reduction when the definition of positivity is based on a single confounder. This tree-based method can be easily implemented using the statistical software program, R. R code for the studies is available online.