• Title/Summary/Keyword: Yi Hae

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Electrical properties of sintered Ag - $SnO_2$ composite materials (소결 Ag - $SnO_2$ 합금의 전기적 특성 연구)

  • Lee, Hee-Woong;Cho, Hae-Yong;Han, Se-Won;Yi, Dong-Yoon
    • Proceedings of the KIEE Conference
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    • 1987.11a
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    • pp.231-233
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    • 1987
  • A study has been made on the electrical properties of sintered Ag-$SnO_2$ composite materials. Hardness increased with $SnO_2$ contents increasing while the electrical conductivity decreased. The weight loss after are erosion test was decreased with $SnO_2$ contents increasing to 10 (w/o) $SnO_2$.

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A Study on the Impact of IT services on the Primary Industry - focused on RFID and USN Service - (IT 서비스가 1차 산업에 미치는 영향에 대한 연구 - RFID/USN 서비스를 중심으로 -)

  • Kim, Young-Hae;Byun, Sang-Ick;Kim, Jong-Woo;Kang, Yi-Chul
    • 한국IT서비스학회:학술대회논문집
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    • 2008.11a
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    • pp.72-75
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    • 2008
  • 우리나라의 IT 산업과 기술의 발전은 전 세계가 부러워할 정도로 글로벌 경쟁력을 갖추고 있으나 다른 산업과의 융합, 특히 1차 산업과의 융합이 매우 저조한 상황이다. IT 기술을 1차 산업에 적용 하면 생산 정보 모니터링, 유통지원 시스템, 이력관리 시스템 등 다양한 서비스를 제공할 수 있어 1차 산업의 글로벌 경쟁력을 키울 수 있다. 본 논문에서는 IT 기술의 1차 산업에의 적용 방안 및 그 효과에 대해 기존의 연구 결과를 바탕으로 체계적으로 분석해 보도록 하겠다.

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The characteristics of MIS devices using difference between various band gap of the SiNx (SiNx의 band gap 차이를 이용한 MIS 소자의 메모리 특성)

  • Son, Hyuk-Joo;Jung, Sung-Wook;Jang, Kyung-Soo;Kim, Kyung-Hae;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.197-198
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    • 2008
  • 이 논문에서는 다양한 SiNx의 band gap을 이용하여 MIS 구조의 메모리 소자를 제작하고 이를 분석하였다. SiNx 박막은 증착 가스비에 따라 다양한 band gap을 가지게 된다. 본 실험에서는 $SiH_4$ 가스와 $NH_3$ 가스를 사용하여 SiNx 박막을 증착하였다. n-type 단결정 실리콘 기판위에 다양한 가스비에 따라 단일 SiNx 박막을 증착 및 분석하였고, 이를 이용하여 NNN 구조의 MIS 소자를 제작하였다. 제작된 소자는 4.6 V의 hysteresis roof 폭과 1000 초 후에 84.8 %의 retention 값을 갖는 우수한 메모리 특성을 보였다.

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Optimum Ge Profile for Higher Cut Off Frequency of SiGe HBT (SiGe HBT 소자의 높은 차단 주파수 특성을 위한 Ge profile 연구)

  • Kim, Sung-Hoon;Kim, Kyung-Hae;Lee, Hoong-Joo;Ryum, Byung-Ryul;Yi, Jun-Sin
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1803-1805
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    • 2000
  • This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with 15% triangular Ge profile shows higher cut-off frequency and DC current gain than that with 19% trapezoidal Ge profile. The cut-off frequency and BC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively.

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About the Costumes and Its Ornaments with Court's Courtesy and Manners - Based on the Official and Historical Book, "Jun, Ri Eui Kwae" - (정조(正祖)의 현륭원(顯隆園) 행차시(行次時)의 궁중의예복식고(宮中儀禮服飾考) - "정리의궤(整理儀軌)"를 중심(中心)으로 -)

  • Cho, Hyo-Soon
    • Journal of the Korean Society of Costume
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    • v.5
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    • pp.113-140
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    • 1981
  • "Jung Ri Eui Kwae" is the book, illustrated and recorded with court coutesy and manners during the King, Jung Jo's honoured coming to his own father's royal tomb "Hyun Ryung Won" of Sa Do Seh Ja(The Crown Prince to be mourned) with his own mother Hae Kyung Koong Mrs. Hong. According to this book, we can see the costumes and its ornaments of the civil and military officials and also of Yu Ryung(the maden court musician) and Dong Ki (a young Kisaeng girl) during serving at Bong Soo Dang bangquet celebrating his own mother's 60th birthday anniversary. It is interesting to review once more the royal ceremonies representing the portion of the costumes and its ornaments in the 18th century of the Yi Dynasty, Yung-Jung Jo era that is to be thought the reform period in almost every field of social system.

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Teachers' Perceptions of the Psychosocial Adjustment of Institutionalized and Home Reared Children (초·중·고교 교사가 지각한 시설아동과 일반아동의 사회심리적 적응차이)

  • Yi, Soon Hyung;Lee, Hae Seung
    • Korean Journal of Child Studies
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    • v.23 no.4
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    • pp.119-136
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    • 2002
  • This study examined teacher's perceptions of the psychosocial adjustment and problem behaviors of institutionalized children compared with home reared children. Data were collected from the teachers of institutionalized children in elementary and secondary schools. The majority of institutionalized children were regarded as not very much different from home reared children. Still, findings from this study lead to conclusions that institutionalization is likely to elevate children's risk for adjustment problems such as social withdrawal, peer violence, and academic failure. Findings that the ratio of institutionalized children attending school decreased with age lead to speculation that failure in psychosocial adjustment may lead to to dropping out of school. Finally, a practical framework for the optimal development of institutionalized children is provided, with emphasis on school-community based interventions.

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Anti-Reflection Properties of In-Situ Doped Spin-On Film

  • U. Gangopadhyay;Kim, Kyung-Hae;Park, J.H.;S.K. Dhungel;D. Mangalaraj;J. Yi;H. Saha;Kim, D.W.
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.6
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    • pp.1-4
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    • 2003
  • Anti-reflection properties of post diffusion doped spin-on source (in-situ AR coating) have been investigated in some detail. A simple experiment for reflectivity study using oblique incidence of light and necessary modification of the theory of minimum reflectivity at oblique incidence has been established. The comparative study of the in-situ AR coating with available spin-on AR film on silicon Solar Cell Surface have been investigated.

Biracial Silicon Solar Cells with Spin-on Doping and Electroless Plating

  • U. Gangopadhyay;Kim, Kyung-Hae;S.K. Dhungel;D. Mangalaraj;Park, J.H.;J. Yi
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.1
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    • pp.7-10
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    • 2004
  • A new method for fabrication of transistor like structure of the bifacial solar cell using spin-on doping and electroless plating has been proposed and the basic characteristics of the bifacial cell have been investigated. It is found that 9% increase in short circuit current is achieved with bifacial connection than the unifacial connection. Some unwanted effect of the series resistance on collection efficiency under different mode of illumination has been pointed out. Loss mechanisms inherent in the transistor like bifacial structure have also been discussed.