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http://dx.doi.org/10.4313/TEEM.2003.4.6.001

Anti-Reflection Properties of In-Situ Doped Spin-On Film  

U. Gangopadhyay (School of Electrical and Computer, Engineering, Sungkyunkwan University)
Kim, Kyung-Hae (School of Electrical and Computer, Engineering, Sungkyunkwan University)
Park, J.H. (School of Electrical and Computer, Engineering, Sungkyunkwan University)
S.K. Dhungel (School of Electrical and Computer, Engineering, Sungkyunkwan University)
D. Mangalaraj (School of Electrical and Computer, Engineering, Sungkyunkwan University)
J. Yi (School of Electrical and Computer, Engineering, Sungkyunkwan University)
H. Saha (Department of Electronics and Tele-communication Engineering, Jadavpur University)
Kim, D.W. (Samsung SDI Co. Ltd., Corporate R&D Center, Yongin City)
Publication Information
Transactions on Electrical and Electronic Materials / v.4, no.6, 2003 , pp. 1-4 More about this Journal
Abstract
Anti-reflection properties of post diffusion doped spin-on source (in-situ AR coating) have been investigated in some detail. A simple experiment for reflectivity study using oblique incidence of light and necessary modification of the theory of minimum reflectivity at oblique incidence has been established. The comparative study of the in-situ AR coating with available spin-on AR film on silicon Solar Cell Surface have been investigated.
Keywords
Solar cell; AR(Anti Reflection); SOD(Silicon On Doping);
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