• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.434-438
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• 2003

XeCl 엑시머 레이저로 펌핑되는 쌍공진기형 색소레이저와 2단 증폭시스템을 개발하여 원격계측 시스템에 적합한 두 개의 파장을 동시 또는 순차적으로 출력하였다. 개발된 쌍공진기는 1200 g/mm의 회절격자를 갖는 grazing-incidence 방법에서 제 1차 및 제 2차 회절차수를 이용하여 구성되었다. 출력특성은 스펙트럼 선폭이 10 pm이하이고, 펌프 에너지에 대하 전체효율은 6% 이상이다. 또한, 파장가변 영역은 제 1차 및 제 2차의 회절차수에 대해 각각 434-470 nm, 436-468 nm 이며, 2단의 증폭기의 증폭이득은 37dB, 추출효율은 9%이다. 개발된 레이저 증폭시스템에서 Coumarine-450의 색소로 발진하고, 이의 출력 6 mJ을 원격계측시스템에 적용하여 수원상공의 NO$_2$의 가스농도분포를 측정하였다. 이 결과 개발된 색소레이저 시스템은 원격계측 시스템의 광원으로 매우 적합함을 확인하였다.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1379-1380
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• 2007

본 연구에서는 XeCl 엑시머 레이저를 통해서 GaN를 선별적으로 고농도 도핑 할 수 있는 새로운 방법을 제안했으며, 제안된 방법에 의해 제작된 소자는 낮은 ohmic contact 저항을 나타내었다. 증착된 실리콘 film에 XeCl 엑시머 레이저를 사용하여 GaN 위에 sputtering 함으로써 조사하였으며 레이저에 의해 조사된 영역에는 ohmic contact을 형성하였다. 기존 방법에 의한 ohmic contact 저항이 0.66 ohm-mm이었던 반면, 레이저 도핑 공정에 의한 ohmic contact 저항은 0.27 ohm-mm로 효과적으로 감소되었다. SIMS 분석을 통해 레이저 조사를 하는 동안 높은 에너지에 의해 실리콘이 GaN로 확산되었으며, ohmic contact 저항이 ohmic contact 영역 아래의 도핑 농도 증가로 인해 감소한 것을 확인했다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.324-326
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• 2004

We have obtained ultra-short pulses with a wavelength of 616 nm from a Distributed Feedback Dye Laser pumped by excimer laser. Using the second harmonic generation, we obtained ultra-short pulse at 308nm in ultraviolet region and also performed amplification in 3 stages of XeCl amplifiers.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.172-177
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• 1996

We have characterized XeCl excimer-laser-induced crystallization of thin amorphous silicon films deposited by PECVD (${\alpha}$-Si:H) and LPCVD (${\alpha}$-Si). The electrical properties, surface roughness and crystallinity of crystallized thin films have been measured. The dc conductivities, crystallinity andsurface roughness of the films increased as the laser energy density and shot density were increased. The properties of laser annealed films deposited by LPCVD were better than those of thin films deposite by PECVD. We have also found that the multiple shots with relative low energy density were more benifical to the improsvement of surface roughness than the single shot with high energy density preserving the crystallinity.

• Korean Journal of Optics and Photonics
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• v.5 no.3
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• pp.386-393
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• 1994

We have investigated output characteristics of XeCI excimer laser excited by transeverse electronbeam. We used e-beam output of 880 kV, 21 kA (70 ns, FWHM) and controlled current density of e-beam by pulsed magnetic coil (4.7 kG) which was fabricated around an e-beam diode (A-K gap is 21 mm) and laser chamber. We have obtained 35 J (4 atm) of e-beam deposition energy injected into laser media. The deposition energy was converted from an exposure area of Radcolor film and rising pressure of gas media which is measured by pressure jump method. The excited volume of $320cm^{3}$ was calculated. The maximum efficiency of 1.7% was obtained with the mixing ratio of HCllXe/Ar==0.2/ 6.3/93.5% and total pressure of 3 atm. Also laser output energy and specific energy were obtained 0.52 J and 1.7 J/I, respectively. For the analysis of experimental results we have developed computer simulation code. From the good agreements with the results of experiment and simulation we could theoretically explain the XeCI* formation channel. relaxation channel, and absorption channel of 308 nm.308 nm.

• Korean Journal of Optics and Photonics
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• v.4 no.4
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• pp.447-451
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• 1993

Long pulse XeCl excimer laser with 150 ns (FWHM) pulse duration is developed using a simple capacitor-charge transfer circuit. We measured the laser pulse width varying the gas mixture ratio and capacitance ratio, which dominantly affect the pulse width. In this way we can easily stretch the pulse width from short pulse to long pulse. The pulse width was stretched by 120 ns as the partial pressure of HC1 and Xe gas was reduced under constant gas mixture ratio ([Xe]/[HCl]= 15), and by varying the capacitance ratio (Cm/Cp) under fixed pressure, the pulse width was stretched by 60 ns.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1612-1614
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• 2002

본 논문에서는 엑시머 레이저 조사에 의한 이온 농도의 분포 변화를 알아보기 위해 붕소 이온이 선택적으로 주입된 비정질 실리콘 박막 위에 XeCl (${\lambda}$=308nm) 엑시머 레이저를 조사하여 붕소이온의 수평 확산 현상을 관찰하였다. 도핑 농도의 분포를 알아보기 위해 불산/질산 용액에 의한 고농도 도핑 영역의 습식 식각을 이용하여 약 $10^{18}/cm^3$ 이하의 붕소이온을 가지는 실리콘 박막의 형태를 전자주사 현미경을 이용해서 관찰하였다. 실험 결과, $200mJ/cm^2$의 레이저 에너지가 조사될 경우, 약 100nm의 수평 확산이 일어났음을 확인 할 수 있었다.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.268-271
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• 1993

Discharge pumped high power excimer laser is a very useful light source of ultraviolet region. In this paper. the design and operation characteristics of UV pre-ionized discharge pumped XeCl laser are discussed. Maximum output power of 890mJ at the efficiency of 1.4% was achieved with 35kV charging voltage, 3.4atm of total pressure and 10pps of pulse repetition rate. Optimum HCl pressure is considered to be between 2.5 and 3.5torr.

• 전자공학회논문지 IE
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• v.43 no.2
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• pp.11-15
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• 2006

In this paper characteristics of polycrystalline silicon crystallized by excimer laser on plastic substrate under 150$^{\circ}C$ is investigated. Amorphous silicon is deposited by rf-magnetron sputter in atmosphere of Ar and He for preventing depletion effect by dehydrogenation as deposition by PECVD. After annealing by 308 nm, 30 Hz, double pulse type XeCl excimer laser, p-chnnel low temperature polycrystalline silicon TFT which maximum mobility is $64cm^2/V{\cdot}s$ at $344mJ/cm^2$ is fabricate.

• Journal of Energy Engineering
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• v.10 no.4
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• pp.379-386
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• 2001

This experimental study deals with on Nitric Oxide Formation & Reduction in Industrial Bunner. In this study, Laser-induced fluorescence (LIF) techniques have been used for quantitative measurements of Nitric Oxide. The NO A-X (0, 0) Vibrational band around 226 nm was excited using a XeCl excimer-pumped dye laser. And on-line excitation used $P_{21}+Q_1(14.5)/R_{12}+Q_2(20.5)/P_1(23.5)$ transition, for minimizing the other interferential effect. The measurements were taken NO concentration distribution in double swirling diffusion flame. In this swirl burner, NO concentration in downstream fo the flame decrease as primary/secondary air ratio increases.