• 한국표면공학회지
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• 제45권6호
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• pp.219-225
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• 2012

The aim of the present study was to investigate the corrosion resistance and characteristics of passive layer between naturally passivated and chemically passivated duplex stainless steel, UNS S31803 (EN 1.4462) using CPT, XPS, and EIS. The treatment of $HNO_3$(II) and $HNO_3$(III) in ASTM A 967 was applied. In case of chemically passivated specimen, CPT of $HNO_3$(II) and $HNO_3$(III) were higher than that of naturally passivated specimen. In addition, from XPS results, the protectiveness index (Cr/(Fe+Cr)) of chemically passivated specimens was also higher than that of naturally passivated specimen. The reason for this result is considered due to post-cleaning treatment in chemical passivation process, that is, immersion in $Na_2Cr_3O_7$ solution. The fact that $HNO_3$(II) passivation treatment showed the highest film resistance and 'n', which is exponent related with constant phase element (CPE) of passivation film, was in good agreement with results of CPS and XPS. The chemical passivation treatment was an effective method to improve corrosion resistance of duplex stainless steel.

• Korean Chemical Engineering Research
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• 제44권2호
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• pp.193-199
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• 2006

${\gamma}-Al_2O_3$에 담지한 Cu-Mn 산화물 촉매에서 톨루엔 완전산화 반응을 $160{\sim}280^{\circ}C$의 온도 범위에서 고정층 반응기로 조사하였다. BET, SEM, TPR, TPO, XPS 및 XRD를 이용하여 촉매 특성분석을 하였다. 톨루엔의 완전산화 반응은 $280^{\circ}C$ 이하에서 이루어졌으며, 적절한 Cu-Mn 담지량은 15.0 wt％Cu-10.0 wt％Mn인 것으로 나타났다. TPR/TPO 및 XPS 분석 결과, 15 Cu-10 Mn 촉매의 산화환원 봉우리가 낮은 온도로 이동하였으며 결합에너지가 높은 값으로 이동하였다. XRD 결과, 고분산된 Mn 산화물과 CuO 보다 $Cu_{1.5}Mn_{1.5}O_4$의 촉매활성 인자로서의 역할이 더욱 우수한 것으로 추측되며, 촉매의 활성은 촉매의 산화환원 능력과 촉매의 높은 산화 상태에 기인하는 것으로 사료된다.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2017년도 제48회 춘계학술대회논문집
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• pp.168-171
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• 2017

X-ray photoelectron spectroscopy(XPS) 분석법을 이용하여 FKM O-ring의 대기중에서의 노화 메카니즘을 관찰하였다. FKM O-ring은 선경 3.53mm, 내경 91.67mm인 오링을 시편으로 사용하였다. 노화 후 FKM O-ring의 oxygen 원소의 농도가 20.39%로 증가하였으며, fluorine 원소는 각각 8.29%로 감소하는 경향을 나타내었다. 이를 통하여 산소에 의한 산화 반응이 FKM O-ring의 주요 노화 반응으로 나타났다. C1s와 F1s 피크 분석 결과, FKM O-ring의 주쇄중 C-F 결합에서 산화 반응이 주로 진행되는 것으로 나타났다. 또한 O1s 피크 분석 결과, 산화 반응을 통하여 C-OH, C=O, 그리고 O=C-O 구조를 형성하며, 주로 카르복실기가 생성되는 것으로 나타났다.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.15-23
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• 2002

In this study, metal/ZnO contacts were thermally annealed at different temperatures (as-dep., 400$^{\circ}C$, 600$^{\circ}C$, 800$^{\circ}C$, 1000$^{\circ}C$) for the investigation of electrical properties, and surface and interface characteristics. The analysis of the element composition and the chemical bonding state of the surface was made by the XPS(X-ray photoelectron spectroscopy). An attempt was made to establish the electrical property-microstructure relationship for the (Ti, Au)/ZnO. The Ti/ZnO contact exhibits an ohmic characteristics with a relatively high contact resistance of 4.74${\times}$10$\^$-1/ $\Omega$$\textrm{cm}^2$ after an annealing at 400$^{\circ}C$. The contact showed a schottky characteristics when the samples were annealed at higher temperature than 400$^{\circ}C$. The transition from the ohmic to schottky characteristics was contributed from the formation of the oxide layers as was confirmed by the peaks for O-O and Ti-O bondings in XPS analysis. For the Au/ZnO contact the lowest contact resistance was obtained from the as-deposited sample. The resistance was slowly increased with annealing temperature up to 600$^{\circ}C$. The ohmic characteristics were maintained eden fort 600$^{\circ}C$ annealing. The XPS analysis showed that the Au-O intensity was dramatically decreased with temperature above 600$^{\circ}C$.

• 한국추진공학회지
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• 제23권1호
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• pp.79-92
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• 2019

Titanium hydride potassium perchlorate (THPP)는 항공우주분야에서 일반적으로 널리 사용되는 불꽃점화장치중 하나이다. 현 연구에서는 THPP에 수분 열 노화를 가했을 때, 연소과정에 끼치는 영향과 변화된 결과들을 실험적으로 밝혀내었다. 우선, Differential Scanning Calorimetry (DSC)와 isoconversional method를 적용하여 노화된 THPP 시료의 반응개시지연 및 최대반응속도의 저하를 확인하였다. 반응속도 파라미터는 첫 번째 반응에서 Viton에 의해 낮아지며 후에 잔류한 $KClO_4$의 영향으로 상승하는 경향을 보였다. 그리고 X-ray photoelectron spectroscopy (XPS)를 통해 노화된 THPP 시료에서 산화제 성분은 감소하고 연료산화효과가 두드러짐을 확인하였다. 또한 NASA Chemical Equilibrium with Applications (CEA)을 사용하여 얻은 이론발열량이 DSC로부터 구한 실험적 발열량과 비슷한 경향을 따르므로 실험적으로 구한 발열량 트렌드가 타당함을 검증할 수 있었다.

• 마이크로전자및패키징학회지
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• 제29권1호
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• pp.71-75
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• 2022

Graphene oxide를 ZnCl₂:NaCl 전해질과 함께 교반한 후 순환 전압전류법에 의해 전기화학적으로 제막하여 유기태양전지용 전자수송층 제막과정을 단순화하고 이를 갖는 유기태양전지를 제작하였다. 소자의 구조는 FTO/ZnO:graphene 전자수송층/P3HT:PCBM 광활성층/PEDOT:PSS 정공수송층/Ag이다. ETL의 형태 및 화학적 특성은 주사전자현미경(scanning electron microscopy, SEM), X선 광전자 분광법(X-ray photoelectron spectroscopy, XPS), 라만 분광법으로 확인하였다. XPS 측정결과 ZnO 금속산화물 및 탄소결합이 동시에 확인되었고, 라만 분광법에서 ZnO와 graphene 피크를 확인하였다. 제작한 태양전지의 전기적 특성을 솔라시뮬레이터로 측정하였고 0.05 V/s의 속도로 2회 제막한 ETL 소자에서 1.94%의 가장 높은 광전변환효율을 나타내었다.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.157-158
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• 2002

A surface hardenable low alloy carbon steel was implanted with medium energy (20 - 50KeV) $N_2^+$ ions to produced a modified hardened surface. The implantation conditions were varied and are given in several doses. The surface hardness of treated and untreated steels were measured using depth sensing ultra micro indentation system (UMIS). It is shown that the hardness of nitrogen ion implanted steels varied from 20 to 50GPa depending on the implantation conditions and the doses of implantation. The structure of the modified surfaces was examined by X-ray photoelectron spectroscopy (XPS). It was found that the high hardness on the implanted surfaces was as a result of formation of non-equilibrium nitrides. High-resolution XPS studies indicated that the nitride formers were essentially C and Si from the alloy steel. The result suggests that the ion implantation provided the conditions for a preferential formation of C and Si nitrides. The combination of evidences from nano-indentation and XPS, provided a strong evidence for the existence of $sp^3$ type of bonding in a suspected $(C,Si)_xN_y$ stoichiometry. The formation of ultra hard surface from relatively cheap low alloy steel has significant implication for wear resistance implanted low alloy steels.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.16-19
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• 2001

DLC films are deposited using a modified FCVA system. Carbon amorphous networks, chemical bonding states, $sp^3$ fraction, interfaces, and structures are studied as a function of substrate voltage ($0{\sim}-250V$). The $sp^3$ content in the films is evaluated by analyzing the XPS spectra(C1s). The structural properties of the surface, bulk, and interfacial layers in DLC/Si systems are quantitatively analyzed by employing XRR method. As the substrate voltage is increased, the $sp^3$ fraction is decreased by means of XPS and Raman spectroscopy. In addition, the structural properties (interfacial layer, contamination layer, and sp3 fraction) derived from XPS depth profile are relatively correlated with the XRR results.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.16-20
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• 2006

In this paper, we investigated the effects of short-term oxygen plasma treatment of semiconducting silicone layer to improve interfacial performances in joints prepared with a insulating silicone materials. Surface characterizations were assessed using contact angle measurement and x-ray photoelectron spectroscopy (XPS), and then adhesion level and electrical performance were evaluated through T-peel tests and electrical breakdown voltage tests of treated semi-conductive and insulating joints. Plasma exposure mainly increased the polar component of surface energy from $0.21\;dyne/cm^2$ to $47\;dyne/cm^2$ with increasing plasma treatment time and then leveled off. Based on XPS analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and COH on semi-conductive silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiO_x,\;x=3{\sim}4$). The oxygen plasma treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength. In addition, electrical breakdown level of joints with adequate plasma treatment was increased by about $10\;\%$ with model samples of joints prepared with a semi-conducting/ insulating silicone polymer after applied to interface.

• 한국전기전자재료학회논문지
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• 제28권6호
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• pp.365-370
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized $n^+$ Si wafers. The thickness of ~30 nm $Al_2O_3$ films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The $Al_2O_3$ films were rapid-annealed at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1,000^{\circ}C$, respectively. Active layers of ZTO films were deposited on the $Al_2O_3/SiO_2$ coated $n^+$ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of $Al_2O_3$ films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.