• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.1-6
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• 2000

X-ray lithography mask with SiC membrane and Ta absorber patterns has been fabricated using ECR plasma CVD, d.c. magnetron sputtering, and ECR plasma etching. The stress of stoichiometric SiC film was adjusted by rapid thermal annealing under $N_2$, ambient. Adjusting the working pressure during sputtering process resulted in a near-zero residual stress, reasonable density, and smooth surface morphology of Ta film. Cl-based plasma showed a good etching characteristics of Ta, and two-step etching process was implemented to suppress microloading effect fur sub-quarter $\mu\textrm{m}$ patterning.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.218-222
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• 2000

W-Ti film properties for X-ray absorber applications have been investigated with Ti composition have been investigated with Ti composition variation. W-Ti films were deposited by DC magnetron sputtering system. As the working pressure increases, film density decreases and film stress changes from compressive to tensile. The transition pressure (where the film stress in zero) and the stress gradient decrease by adding Ti into W-Ti(6.5 at.%) film shows the smallest stress gradient and transition pressure. It also shows high density ($17.7g/\textrm{cm}^3$) similar to that of pure-W ($17.8g/\textrm{cm}^3$) at the transition pressure. All the films show columnar structure, and its size decreases with increasing Ti composition. Surface roughness and thermal stability are improved by Ti-addition, resulting in a better property for X-ray absorber applications.

• Journal of the Korean Society of Radiology
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• v.4 no.1
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• pp.25-30
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• 2010

The objective of this study was to compare the resolution and density appropriate to diagnosis in chest PA radiography. In comparing the resolution, we radiographed with conventional radiography, computed radiography(CR) and digital radiography(DR) using the linear resolution phantom(Nuclear Associates-Carle Place. N.Y.). 2 radiologists and 3 radiological technologists read the resolution value by the blind test. DR, conventional radiography and CR measured 3.95, 3.58, 3.48 resolution value respectively. In analysing the density, we chose the fifty normal chest CR and DR and conventional film. We estimated the density using by densitometer(X-rite company-Model 301) in seven regions(lung field, lung field margine, mediastinum I, mediastinum II, heart shadow I, heart shadow II, diaphragm) of chest film. We adapted to analysis the Japanese chest X-ray evaluating method and table. It was scored 0(farthest density value) to 2(nearest density value). DR scored 2 at mediastinum I, mediastinum II, heart shadow I, heart shadow II and diaphragm. On the contrary with, CR scored 2 at lung field and lung field margine. Consequently, DR superior than CR and conventional radiography film compairing density and resolution. It was due to small pixel size and post processing algorithm with digital radiography.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.392-395
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• 2003

For the purpose of digital x-ray imaging, many materials such as $PbI_2$, $HgI_2$, TlBr, CdTe and CdZnTe have been under development for servaral years as direct converter layer. $Hgl_2$ film detector have recently been shown as one of the most promising semiconductor materials to be used as direct converters in x-ray digital radiography. This paper, the $HgI_2$ films are deposited on conductive-coated glass by screen printing, in which $HgI_2$ powder is embedded in a binder and solvent, and the slurry is used to coat the conductive-coated glass. We investigated electrical characteristic of the fabricated $HgI_2$ films. The x-ray response to radiological x-ray generator of 70Kvp using the current integration mode will be reported for screen printing films. These results indicate that $HgI_2$ detectors have high potential as new digital x-ray imaging devices for radiography.

• Journal of the Korea Institute of Military Science and Technology
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• v.17 no.5
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• pp.577-584
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• 2014

In this study, the behavior of a shaped charge projectile's metal jet was analyzed using flash radiography. The projectile was installed horizontally to observe the behavior of jet for enough time. While the X-ray tube heads are fixed at one point, the behavior range of the jet is wide in this experimental set up, therefore the angle between the X-ray tube heads and the jet tip is changed continuously as jet moves forward. Jet particle's locations calculated from the X-ray films become different from their real positions under this situation because of the film to object distance(FTOD) and correction for error by FTOD is required. In this study, a method was devised to correct the error by FTOD and this was applied for the investigation of jet behavior of a 70 mm caliber's shaped charge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.420-423
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• 2002

In recent years, there has been keen interest in developing f1at panel detectors for all modalities of radiology, including gerneral radiology, fluoroscopy(angiography and cardiology), electronic portal imaging, and mammography. In this paper, we report the new hybrid x-ray detector consisted of CsI(Tl) photoemission layer and a-Se photoconductor layer to resolve conventional x-ray detector such as the direct detector using a-Se and the indirect detector using CsI(Tl)/a-Si. To design the structure of CsI(Tl)/a-Se detector, the penetrated energy spectrum and absorption fraction was estimated using MCNP 4C code. Experimental results showed that the absorption fraction of $500{\mu}m-Se$ film and $150{\mu}m-CsI\left(Tl \right)/a-Se\left( 30{\mu}m \right)$ film is 70% at 70 kVp. The absorption energy is 90% at $350{\mu}m-CsI(Tl)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.79-82
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• 2003

a-Se film is known as promising medical X-ray detector material but a-Se as dopanted Tellurium is not available in X-ray detectors. a-Se thick film was grown by vacuum thermal evaporator to $3{\mu}m$ thickness. The characteristics of thick films were analyzed by XRD, U-V Meter, and SEM measurements. Te composition is 0.1, 0.3, 0.5, 0.7g. This paper is fundmental data for phosphor layer's essential parameter that selenium have absorption wavelength along to various Te concentration rate.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.6-12
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• 1995

High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

• International Journal of Ocean System Engineering
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• v.2 no.2
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• pp.106-115
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• 2012

In the present study, TiN and CrN films were coated by arc ion plating equipment onto aluminum alloy substrate, A2024. The film thickness was about 4.65 ${\mu}m$. TiN and CrN films were analyzed by X-ray diffraction and energy dispersive X-ray equipments. The Young's modulus and the micro-Vickers hardness of aluminum substrate were modified by the ceramic film coatings. The difference in Young's modulus between substrate and coating film would affect on the wear resistance. The critical load, Lc, was 75.8 N for TiN and 85.5 N for CrN. It indicated from the observation of optical micrographs for TiN and CrN films that lots of cracks widely propagated toward the both sides of scratch track in the early stage of MODE I. TiN film began to delaminate completely at MODE II stage. The substrate was finally glittered at MODE III stage. For CrN film, a few crack can be observed at MODE I stage. The delamination of film was not still occurred at MODE II and then was happened at MODE III. This agrees with critical load measurement which the adhesive strength was greater for CrN film than for TiN film. Consequently, it was difficult for CrN to delaminate because the adhesive strength was excellent against Al substrate. The wear process, which the film adheres and the ball transfers, could be enhanced because of the increase in loading. The wear weight of ball was less for CrN than for TiN. This means that the wear damage of ball was greater for TiN than for CrN film. It is also obvious that it was difficult to delaminate because the CrN coating film has high toughness. The coefficient of friction was less for CrN coating film than for TiN film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1026-1029
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• 2001

Zinc films have been deposited onto various buffer layers, Al, Al-Cu, Ag and Ag-Al, by vacuum evaporation method in order to investigate the film microstructure and its consequence on the film growth. Zn films were grown onto Al buffer layers with faster rates than on Ag buffer layers, because of the presence of preferred growth orientation. Especially, in the Zn film formation on the Ag layers, intermetallic compounds AgZn was formed to cause the different growth orientation from Zn film obtained on the Al layers.