열증착방법에 의해 제조된 Si(100)/X(500$\AA$)/Zn(1000$\AA$) 이중박막 성장에 관한 연구

A Study on the growth of Si(001)/X(500$\AA$)/Zn(1000$\AA$) double layers deposited by thermal evaporation process.

  • 신동원 (부산대학교 금속공학과) ;
  • 정순종 (한국전기연구원 전자기소자그룹) ;
  • 이동윤 (한국전기연구원 전자기소자그룹) ;
  • 민복기 (한국전기연구원 전자기소자그룹) ;
  • 정원섭 (부산대학교 금속공학과) ;
  • 송재성 (한국전기)
  • 발행 : 2001.07.01

초록

Zinc films have been deposited onto various buffer layers, Al, Al-Cu, Ag and Ag-Al, by vacuum evaporation method in order to investigate the film microstructure and its consequence on the film growth. Zn films were grown onto Al buffer layers with faster rates than on Ag buffer layers, because of the presence of preferred growth orientation. Especially, in the Zn film formation on the Ag layers, intermetallic compounds AgZn was formed to cause the different growth orientation from Zn film obtained on the Al layers.

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