한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2001년도 하계학술대회 논문집
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- Pages.1026-1029
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- 2001
열증착방법에 의해 제조된 Si(100)/X(500$\AA$ )/Zn(1000$\AA$ ) 이중박막 성장에 관한 연구
A Study on the growth of Si(001)/X(500$\AA$ )/Zn(1000$\AA$ ) double layers deposited by thermal evaporation process.
초록
Zinc films have been deposited onto various buffer layers, Al, Al-Cu, Ag and Ag-Al, by vacuum evaporation method in order to investigate the film microstructure and its consequence on the film growth. Zn films were grown onto Al buffer layers with faster rates than on Ag buffer layers, because of the presence of preferred growth orientation. Especially, in the Zn film formation on the Ag layers, intermetallic compounds AgZn was formed to cause the different growth orientation from Zn film obtained on the Al layers.