Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.07a
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- Pages.1026-1029
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- 2001
A Study on the growth of Si(001)/X(500$\AA$ )/Zn(1000$\AA$ ) double layers deposited by thermal evaporation process.
열증착방법에 의해 제조된 Si(100)/X(500$\AA$ )/Zn(1000$\AA$ ) 이중박막 성장에 관한 연구
Abstract
Zinc films have been deposited onto various buffer layers, Al, Al-Cu, Ag and Ag-Al, by vacuum evaporation method in order to investigate the film microstructure and its consequence on the film growth. Zn films were grown onto Al buffer layers with faster rates than on Ag buffer layers, because of the presence of preferred growth orientation. Especially, in the Zn film formation on the Ag layers, intermetallic compounds AgZn was formed to cause the different growth orientation from Zn film obtained on the Al layers.