• Journal of Magnetics
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• v.7 no.2
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• pp.51-54
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• 2002

The crystallization of amorphous Ba-ferrite/sapphire(001) thin films was studied in real-time synchrotron x-ray scattering experiments. In the sputter-grown amorphous films, we found the existence of epitaxial $Fe_3O_4$ interfacial crystallites (50-${\AA}$-thick), well aligned $[0.03^circ$full-width at half-maximum (FWHM)] to the sapphire [001] direction. The amorphous precursor was crystallized to epitaxial Ba-ferrite and \alpha-Fe_2O_3$grains in two steps; i) the nucleation of crystalline \alpha-Fe_2O_3$ phase started at $300^circ{C}$ together with the transformation of the $Fe_3O_4$ crystallites to the \alpha-Fe_2O_3$ crystallites, ii) the nucleation of Ba-ferrite phase occurred at temperature above $600^circ{C}$. In the crystallized films irrespective of the film thickness, the crystal domain size of the \alpha-Fe_2O_3$grains was about 250 ${\AA}$ in the film plane, similar to that of the Ba-ferrite grains.

• Current Applied Physics
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• v.18 no.11
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• pp.1230-1234
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• 2018

We report a new method of measuring the non-radiative recombination rate in bulk Silicon. Synchrotron timeresolved x-ray scattering (TRXS) combines femtometer spatial sensitivity with nanosecond time resolution to record the temporal evolution of a crystal lattice following intense ultrafast laser excitation. Modeling this data requires an Auger recombination time that is considerably slower than previous measurements, which were made at lower laser intensities while probing only a relatively shallow surface depth. We attribute this difference to an enhanced Coulomb interaction that has been predicted to occur in bulk materials with high densities of photoexcited charge carriers.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.51-51
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• 2002

나노기공물질은 특정 기반물질(matrix) 내부에 대략 나노미터크기의 기공을 함유하고 있는 물질이며 나노기공물질의 특성은 기반물질의 특성과 더불어 기공의 형태, 크기, 분포에 의해서 결정된다. 나노기공물질의 기공에 대한 정보를 측정하는 방법으로는 TEM, 흡착법, FE-SEM과 더불어 중성자 또는 X-ray 빔의 산란을 이용하는 소각중성자산란 (Small-Angle Neutron Scatering, SANS), 소각 X-ray 산란 (Small-Angle X-ray Scattering, SAXS), 중성자반사율측정 (Neutron Relfectimetry, NR), X-ray 반사율측정 (X-Ray Reflectometry, XRR) 등이 사용되고 있다. 본 발표는 대략 1 nm - 100 nm 영역의 bulk 구조와 층상구조를 측정할 수 있는 소각 중성자 산란과 중성자 반사율 측정기법을 이용한 나노기공 측정기술을 다룬다.

• Macromolecular Research
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• v.14 no.6
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• pp.588-595
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• 2006

The morphology, structure and melting behaviour of cold-crystallized isotactic polystyrene (iPS) were studied by differential scanning calorimetry (DSC), wide angle X-ray diffraction (WAXD) and small angle X-ray scattering (SAXS). The polymer was found to crystallize according to the dual-lamellar stack model. The two populations of lamellae, along with a melting-recrystallization phenomenon, determined the appearance of multiple melting peaks in DSC traces. The annealing peak was attributed to the relaxation of a rigid amorphous phase, rather than to the melting of crystalline material.

• Current Applied Physics
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• v.18 no.11
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• pp.1225-1229
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• 2018

In this paper, we investigated the electronic structures and defect states of $SrLaMgTaO_6$ (SLMTO) double perovskite structures by using resonant inelastic x-ray scattering. Recently, $Eu^{3+}$ doped SLMTO red phosphors have been vigorously investigated due to their higher red emission efficiency compared to commercial white light emitting diodes (W-LED). However, a comprehensive understanding on the electronic structures and defect states of host SLMTO compounds, which are specifically related to the W-LED and photoluminescence (PL), is far from complete. Here, we found that the PL spectra of SLMTO powder compounds sintered at a higher temperature, $1400^{\circ}C$, were weaker in the blue emission regions (at around 400 nm) and became enhanced in near infrared (NIR) regions compared to those sintered at $1200^{\circ}C$. To elucidate the difference of the PL spectra, we performed resonant inelastic x-ray spectroscopy (RIXS) at Ta L-edge. Our RIXS result implies that the microscopic origin of different PL spectra is not relevant to the Ta-related defects and oxygen vacancies.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.3-3
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• 2004

• Journal of The Korean Astronomical Society
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• v.29 no.spc1
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• pp.41-42
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• 1996

A possible cosmic X-ray background(XRB) radiation related to original antimatter is considered. If the universe is made of separating domains of antimatter and matter, the photons produced by the annihilation of electron-positron and proton-antiproton on the last scattering surface would reach us in the energy $\~$0.45 keV and $\~$60 keV respectively because of the redshift. The spectrums of X-ray radiation from annihilation are deduced and a possible observational figure is described also.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.697-698
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• 2014

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.370-373
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• 2009

X-ray lithography was employed to fabricate ITO-less high resolution sustain electrodes for plasma display panel (PDP). A polyimide film based X-ray mask and Xray sensitive Ag electrode paste were fabricated to check their effect on the patterning of Ag electrodes with less than 30 ${\mu}m$ in width. The X-ray lithographic method was found to be useful for the high resolution sustain electrode patterns due to the high penetration power and low scattering property of X-ray source.

• Journal of Adhesion and Interface
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• v.3 no.4
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• pp.19-26
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• 2002

In order to study the toughening mechanism of rubber modified polycarbonate, the sequence of development of micro-voids was investigated by real-time small angle X-ray scattering with Synchrotron radiation (SR-SAXS). The used test method was wedge test. The scattering intensity increases with increasing penetration depth of wedge, i.e. applied strain. The increase is due to the micro-void formation during deformation. This micro-void was uniformly developed in matrix and was different from large-void due to internal cavitation of rubber particle and/or debonding between rubber particle and polycarbonate matrix. The micro-void was developed at the critical strain and the radius of micro-void is around $600{\AA}$. Above the critical strain the size of micro-void remains almost constant with increasing applied strain. However, the population of micro-void increased with applied strain.