• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.193-193
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• 2011

To obtain ceramic films, the sol-gel coating technique has been broadly used with heat treatment, but crack formation tend to occur during heat treatment in thick sol-gel films. We prepared PZT thin films by sol-gel method with single-step spin coating process. The PZT solution have been synthesized using lead acetate ($Pb(CH_3COO)_2$), zirconium acetylacetonate ($Zr(OC_3H_7^n)_4$), and titanium diisopropoxide bis(acetylacetonate) 75wt% in isopropanol ($Ti(OC_3H_7^i)_2(OC_3H_7^n)_2$) as starting materials and n-propanol was selected as a solvent. The poly(vynilpyrrolidone) (PVP) was added with 0, 0.25, 0.5, 0.75, and 1 molar ratios to control viscosity of solution. We investigated influence of the viscosity on thickness, microstructure, and electrical properties of final PZT films. Thermo-gravimetric analysis and differential scanning calorimeter (TGA/DSC) was carried out from room temperature to $800^{\circ}C$ in order to measure pyrolysis temperature. Structural characteristics were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Ferroelectric and dielectric properties were measured by RT66A (Radiant) and impedance analyzer (Agilent), respectively. The thicknesses of PZT films depended on incorporation of an excess amount of PVP. Finally, we obtained PZT films of good quality without crack formation via single-step spin coating.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.255-255
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• 2011

Zinc oxide based thin films have been extensively studied in recent several years because they have very interesting properties and zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technologies don't completely satisfy the industrial requirements. In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photoelectron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Increasing of the oxygen content in the gas mixture during deposition allow to obtain high-resistive protective and insulation coatings with high adhesion to the metallic surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.211-211
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• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.409-415
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• 2012

$TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.104.2-104.2
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• 2012

이종 재료의 접합에 대한 연구는 단일 재료에서 얻을 수 없는 물리적/기계적 특성과 이종 재료의 우수한 특성을 얻을 수 있다는 장점이 있어 국내외 적으로 연구가 활발히 진행되고 있다. 이러한 이종 접합 기술은 구조재료와 에너지 변환분야에 가장 많이 사용되고 있으며, 그 외 광촉매와 Thin film, 경량구조재료 등에도 사용되고 있다. 그 중 FGM(Functional Graded Materials)는 조성의 점진적인 변화를 통하여 접합하는 방법으로 이종 재료 접합 시 발생하는 내부 응력을 해소해줌으로써 적합한 방법이라고 할 수 있다. FGM 제작에 사용되는 방법으로 널리 알려진 것들로는 plasma spraying, 원심주조, 분말 야금법, PVD, CVD 그리고 EPD(electrophoretic deposition) 등이 있다. 이중에서 EPD는 수용액이나 유기용매와 같은 분산매체 중에 콜로이드 입자의 표면에 대전되는 전하를 이용하여, 외부에서 전장을 걸어서 입자의 움직임을 제어하는 기술이다 EPD는 코팅 속도가 상대적으로 빠르고 두꺼운 코팅 층 제작이 가능하다. 또한 바인더, 윤활제 또는 가소제를 사용하지 않고 다양한 종류와 모양의 기판 위에 균일한 코팅이 가능하다는 장점이 있다. 본 연구에서는 Ni substrate를 이용하여 그 위에 Ni과 $Al_2O_3$의 조성을 점진적으로 변화시켜 FGM을 EPD 방법으로 코팅하였다. 여기서 사용된 Ni은 높은 녹는점과 좋은 연성으로 인해 성형이 용이하여 구조재료로 적합하며, $Al_2O_3$는 고내열성과 내부식성을 가지며 경도가 높다는 장점이 있다. 본 연구에서는 EPD 방식을 이용하여 Ni/$Al_2O_3$ FGM을 코팅하였으며, 코팅 후 발생하는 substrate와의 접착력 문제를 해결하기 위해서 건조 방식과 substrate의 표면 상태를 최적화하여 다층의 Ni/$Al_2O_3$ FGM을 코팅 및 소결하였다. Zeta-potential 측정을 통해 electrophoretic mobility와 suspension의 분산 안정도를 평가 할 수 있었으며, X-ray 회절 분석(XRD)을 통하여 Ni 의 환원 여부를 확인하였다. 또한 Scanning electron microscopy(SEM) 분석을 통하여 미세구조 분석을 하였고, 최종적으로 Electron Probe Micro Analyzer (EPMA) 를 이용하여 다층 구조의 조성변화를 확인함으로 Ni/$Al_2O_3$의 FGM 코팅이 이루어졌음을 확인하였다.

• Journal of Powder Materials
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• v.22 no.6
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• pp.396-402
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• 2015

The organic binder-free paste for dye-sensitized solar cell (DSSC) has been investigated using peroxo titanium complex. The crystal structure of $TiO_2$ nanoparticles, morphology of $TiO_2$ film and electrical properties are analyzed by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Electrochemical Impedance Spectra (EIS), and solar simulator. The synthesized $TiO_2$ nanopowders by the peroxo titanium complex at 150, 300, $400^{\circ}C$, and $450^{\circ}C$ have anatase phase and average crystal sizes are calculated to be 4.2, 13.7, 16.9, and 20.9 nm, respectively. The DSSC prepared by the peroxo titanium complex binder have higher $V_{oc}$ and lower $J_{sc}$ values than that of the organic binder. It can be attributed to improvement of sintering properties of $TCO/TiO_2$ and $TiO_2/TiO_2$ interface and to formation of agglomerate by the nanoparticles. As a result, we have investigated the organic binder-free paste and 3.178% conversion efficiency of the DSSC at $450^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.10 no.2
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• pp.118-124
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• 2001

When particles are dissolved in solution, they have different zeta-potentials depending on pH. Zeta-potential has an influence on particle separation, which can control particle size. And the size of $WO_3$ particle affects the sensitivity of $WO_3$ sensor for detecting NO gas. Therefore we study influence of pH on NO-sensing $WO_3$ gas sensor fabricated by Sol-Coprecipitation method. As pH increases from 2 to 7, dynamic mobility of $WO_3$ precursor was increased. When pH was 7, it showed the largest distribution separation. It means when pH is 7, we can make $WO_3$ powder which has smaller particle size. And it is confirmed by particle size analysis of $WO_3$ powder, X-ray diffration result of $WO_3$ sensing layer and surface morphology. It also affect NO sensing characteristics of $WO_3$ gas sensor. The sensing film synthesized at pH 7 showed the largest sensitivity.

• Laser Solutions
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• v.17 no.1
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• pp.1-6
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• 2014

Indium tin oxide (ITO) is an important transparent conducting oxide (TCO). ITO films have been widely used as transparent electrodes in optoelectronic devices such as organic light-emitting devices (OLED) because of their high electrical conductivity and high transmission in the visible wavelength. Finding ways to control ITO micromachining depth is important role in the fabrication and assembly of display field. This study presented the depth control of ITO patterns on glass substrate using a femtosecond laser and slit. In the proposed approach, a gaussian beam was transformed into a quasi-flat top beam by slit. In addition, pattern of square type shaped by slit were fabricated on the surfaces of ITO films using femtosecond laser pulse irradiation, under 1030nm, single pulse. Using femtosecond laser and slit, we selectively controlled forming depth and removed the ITO thin films with thickness 145nm on glass substrates. In particular, we studied the effect of pulse number on the ablation of ITO. Clean removal of the ITO layer was observed when the 6 pulse number at $2.8TW/cm^2$. Furthermore, the morphologies and fabricated depth were characterized using a optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS).