• Title/Summary/Keyword: X-Ray diffraction measurement

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Microstructure and Magnetic Properties of Nanocomposite Sm2Fe15Ga2Cx/α-Fe Permanent Magnets

  • Cheng, Zhao-hua
    • Journal of Magnetics
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    • v.8 no.1
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    • pp.18-23
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    • 2003
  • In our previous work, microstructure and magnetic properties of two-phase exchange-coupled $Sm_2Fe_{15}Ga_2C_{x}$/$\alpha$-Fe nanocomposites have been investigated by means of x-ray diffraction, transmission electron microscopy and magnetization measurement. It was found the exchange coupling between the magnetically hard phase $Sm_2Fe_{15}Ga_2C_{x}$ and the magnetically soft one ${\alpha}$-Fe results in an enhancement of the remanence. The sizes of crystallites of both phases are, however much larger than the Block domain-wall width of the magnetically hard phase. This microstructure gives rise to a concave demagnetization curve and consequently reduces the maximum energy Product. In order to improve their magnetic properties, a few Percent of Zr, which may be effective to refine the microstructure through rapid quenching, was introduced into the nanocomposites. The addition of Zr was found to improve the magnetic properties significantly, Under optimum heat-treatment conditions, the remanence, coercivity and maximum energy Product increase from 0.65 T, 0.48 T and 50 kJ/$m^{3}$ for the Zr-free sample to 0.72 T, 0.77 T and 71.6 kJ/$m^{3}$ for the 1 at.% Zr-containing one, respectively, The improvements of magnetic properties are due to the refinement of microstructure by the addition of Zr.

The effect of thermal anneal on luminescence and photovoltaic characteristics of B doped silicon-rich silicon-nitride thin films on n-type Si substrate

  • Seo, Se-Young;Kim, In-Yong;Hong, Seung-Hui;Kim, Kyung-Joong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.141-141
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    • 2010
  • The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

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Sol-Gel Synthesis, Crystal Structure, Magnetic and Optical Properties in ZnCo2O3 Oxide

  • Das, Bidhu Bhusan;Barman, Bittesh
    • Journal of the Korean Chemical Society
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    • v.63 no.6
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    • pp.453-458
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    • 2019
  • Synthesis of ZnCo2O3 oxide is performed by sol-gel method via nitrate-citrate route. Powder X-ray diffraction (XRD) study shows monoclinic unit cell having lattice parameters: a = 5.721(1) Å, b = 8.073(2) Å, c = 5.670(1) Å, β = 93.221(8)°, space group P2/m and Z = 4. Average crystallite sizes determined by Scherrer equation are the range ~14-32 nm, whereas SEM micrographs show nano-micro meter size particles formed in ZnCo2O3. Endothermic peak at ~798 K in the Differential scanning calorimetric (DSC) trace without weight loss could be due to structural transformation and the endothermic peak ~1143 K with weight loss is due to reversible loss of O2 in air atmosphere. Energy Dispersive X-ray (EDX) analysis profile shows the presence of elements Zn, Co and O which indicates the purity of the sample. Magnetic measurements in the range of +12 kOe to -12 kOe at 10 K, 77 K, 120 K and at 300 K by PPMS-II Physical Property Measurement System (PPMS) shows hysteresis loops having very low values of the coercivity and retentivity which indicates the weakly ferromagnetic nature of the oxide. Observed X-band EPR isotropic lineshapes at 300 K and 77 K show positive g-shift at giso ~2.230 and giso ~2.217, respectively which is in agreement with the presence of paramagnetic site Co2+(3d7) in the oxide. DC conductivity value of 2.875 ×10-8 S/cm indicates very weakly semiconducting nature of ZnCo2O3 at 300 K. DRS absorption bands ~357 nm, ~572 nm, ~619 nm and ~654 nm are due to the d-d transitions 4T1g(4F)→2Eg(2G), 4T1g(4F)→4T1g(4P), 4T1g(4F)→4A2g(4F), 4T1g(4F)→4T2g(4F), respectively in octahedral ligand field around Co2+ ions. Direct band gap energy, Eg~ 1.5 eV in the oxide is obtained by extrapolating the linear part of the Tauc plot to the energy axis indicates fairly strong semiconducting nature of ZnCo2O3.

Development and application of the magnetic field device for single crystal growth (자기장 단결정 성장장치의 개발과 적용)

  • Kim, Shin Ae;Cho, Sang-Jin;Magay, Elena;Ryu, Sun-Young
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.1
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    • pp.1-7
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    • 2013
  • The three-dimensional structure of the proteins, including the location of the hydrogen atoms can be analyzed by using neutron diffraction. In order to grow single crystals for neutron diffraction experiments, we developed a simple magnetic field device with the commercial magnets and succeeded in growing hen egg-white lysozyme single crystals of more than 1 $mm^3$ in volume using this device. The crystals grown with a magnetic field were larger and had perfect transparency, whereas the crystals grown without a magnetic field had micro-cracks. The result of the X-ray measurement showed a good resolution and small mosaicity for the crystals grown in the presence of a magnetic field.

Optical properties of Al doped ZnO Nanofibers Prepared by electrospinning (전기방사를 이용한 Al이 첨가된 ZnO 나노섬유의 제조 및 광학 특성평가)

  • Song, Chan-Geun;Yoon, Jong-Won
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.5
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    • pp.205-209
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    • 2011
  • Zinc oxide has semi-conductivity and super conductivity characteristics. It can be used optically and is applied on many areas such as gas sensor, solar cell and optical waveguide. In this paper, to improve optical characteristics of ZnO, aluminum was added on zinc oxide. Zinc oxide and aluminum zinc oxide was fabricated as nano fiber form. ZnO solution was created by mixing poly vinyl pyrrolidone, ethyl alcohol, and zinc acetate. An Al doped ZnO was created by adding aluminum solution to ZnO sol. By applying these sols on electro spinning method, nano fibers were fabricated. These fibers are heat treated at 300, 500, and $700^{\circ}C$ degrees and were analyzed with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) to examine the nano structures. TGA and DSC measurement was also used to measure the change of mass and calorie upon temperature change. The absorbance of ZnO and Al-doped ZnO was carried out by UV-vis measurement.

MIT characteristic of VO2 thin film deposited by ALD using vanadium oxytriisopropoxide precursor and H2O reactant

  • Shin, Changhee;Lee, Namgue;Choi, Hyeongsu;Park, Hyunwoo;Jung, Chanwon;Song, Seokhwi;Yuk, Hyunwoo;Kim, Youngjoon;Kim, Jong-Woo;Kim, Keunsik;Choi, Youngtae;Seo, Hyungtak;Jeon, Hyeongtag
    • Journal of Ceramic Processing Research
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    • v.20 no.5
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    • pp.484-489
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    • 2019
  • VO2 is an attractive candidate as a transition metal oxide switching material as a selection device for reduction of sneak-path current. We demonstrate deposition of nanoscale VO2 thin films via thermal atomic layer deposition (ALD) with H2O reactant. Using this method, we demonstrate VO2 thin films with high-quality characteristics, including crystallinity, reproducibility using X-ray diffraction, and X-ray photoelectron spectroscopy measurement. We also present a method that can increase uniformity and thin film quality by splitting the pulse cycle into two using scanning electron microscope measurement. We demonstrate an ON / OFF ratio of about 40, which is caused by metal insulator transition (MIT) of VO2 thin film. ALD-deposited VO2 films with high film uniformity can be applied to next-generation nonvolatile memory devices with high density due to their metal-insulator transition characteristic with high current density, fast switching speed, and high ON / OFF ratio.

Fabrication of Magnesium Diboride Thin Films by Aerosol Deposition (에어로졸 증착법에 의한 $MgB_2$ 박막 제조)

  • Sinha, B.B.;Chung, K.C.;Jang, S.H.;Hahn, B.D.;Park, D.S.;Wang, X.L.;Dou, S.X.
    • Progress in Superconductivity
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    • v.13 no.2
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    • pp.122-126
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    • 2011
  • Superconducting $MgB_2$ thin films were fabricated by using a novel aerosol deposition technique wherein the pre-reacted powder is directly transformed into respective thin film. The formed thin films were characterized by X-ray diffraction technique and FE-SEM to understand its structure and morphology and the superconducting behavior has been characterized with the four probe resistivity measurement. The as-deposited thin films were formed into the frustrated amorphous structure, which were relaxed on the further heat treatment at $900^{\circ}C$ for 3 hrs. The relaxed amorphous $MgB_2$ thin films showed a comparatively high superconducting onset at about 38 K.

Ga doped ZnO Thin Films for Gas Sensor Application (Ga이 첨가된 ZnO 박막의 가스센서로의 응용 연구)

  • Hwang, Hyun-Suk;Yeo, Dong-Hun;Kim, Jong-Hee;Song, Joon-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.6
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    • pp.499-502
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    • 2008
  • In this work, Ga-doped ZnO (GZO) thin films for gas sensor application were deposited on low temperature co-fired ceramics (LTCC) substrates, by RF magnetron sputtering method. The LTCC substrate is one of promising materials for this application since it has many advantages (e.g., low cost production, high manufacturing yields and easy realizing 3D structure etc.). The LTCC substrates with thickness of $400\;{\mu}m$ were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The structural properties of the fabricated GZO thin film with thickness of 50 nm is analyzed by X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM). The film shows good adhesion to the substrate. The GZO gas sensors are tested by gas measurement system and show fast response and recovery characteristics to $NO_x$ gas that is 27.2 and 27.9 sec, recpectively.

Preparation of YBa$_2Cu_#O_x$ films by MOCVD using single liquid solution source (단일액상원료를 사용하는 MOCVD법에 의한 YBa$_2Cu_3O_x$ 박막 제조에 관한 연구)

  • Kim, Bo-Ryoun;Lee, Hee-Gyoun;Hong, Gye-Won;Jee, Young-A;Shin, Hyung-Shik
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.129-132
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    • 1999
  • A new single solution source MOCVD technique for the deposition of YBCO film has been developed, using a ultrasonic atomizer to feed the precursors into an evaporation zone. This method being investigated as a basis for future long wire fabrication, for example the electric power use, the magnatic applications, etc.. YBCO films were prepared on MgO(100) substrate, using mixture of Y, Ba, and Cu ${\beta}$ -diketonate chelate was dissolve in tetrahydrofuran as a solution sources. X-ray diffraction measurement indicated that the thin film grew epitaxially with the c-axis orientation perpandicular to the surface of the surface.

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Manufacture of Yellow Ocher Polystyrene-Based Hybrid Nanoparticles for High-Performance PET Applications (고성능 페트 생산용 폴리스티렌 기반 하이브리드형 나노구조체 생산)

  • Choi, Jae Bong;Kim, Sanghee
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.38 no.8
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    • pp.701-707
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    • 2014
  • The ecofriendly yellow ocher is used in the manufacturing of cosmetics, construction, and food packaging. The polyethylene terephthalate (PET) used for manufacturing food containers has a microporous structure that causes aeration. Hydrophilic yellow ocher may be applied to hydrophobic PET by surface modification to overcome this issue. The aim of this study is to fabricate a yellow ocher polystyrene hybrid structure in the form of nanoparticles using an optimizing molar ratio of styrene, divinylbenzene, and potassium peroxodisulfate for use in emulsion polymerization. The polymerization was conducted in a yellow ocher suspension that was prepared by dispersing mechanically ground yellow ocher in DI water. The prepared hybrid structure was measured using scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction. The measurement revealed the spherical morphology and Si component that resulted from the yellow ocher in the polystyrene particles. We expect that this hybrid structure would be used as platform material to minimize aeration in PET.