• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1603-1605
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• 1997

$LiNiO_2$ is prepared by heating LiOH $H_2O$ and $Ni(OH)_2$ (mole ratio 1:1). In this study, we investigated X-ray diffraction, and charge/discharge property heat treatment condition and conductive agent sort and volume of $LiNiO_2$ prepared at various temperature and time. All $LiNiO_2$ prepared at this study showed hexagonal structure. In charge/discharge capacities, heated at $O_2$ than air and $750^{\circ}C$ than $700^{\circ}C$, specific capacity is higher. Therefore, when preliminary heat at $650^{\circ}C$ $O_2$ and heat at $750^{\circ}C$ carried out, charge/discharge property is best.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.219-223
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• 2003

Zirconia gels dispersed with fine Au particles have been prepared by the sol-gel method. Starting solution with (OC$Zr_4$$H_{ 9}$)$_4$, $C_4$ $H_{9}$ OH, $H_2$O,$ HNO_3$, $HAuC1_4$ was used to prepare gels in several molar ratio. After hydrolysis, viscosity of solutions as 4∼5 cP and gelling time of sols were spent about 9 days. As the heat-treatment temperature was increased,$ ZrO_2$ had the phase transition from tetragonal to monoclinic at $750^{\circ}C$. Heat-treatments of the gel have performed at 500, 700, 750, 800, 1000 and $1100^{\circ}C$ for 3 hrs, respectively. We have investigated TG-DTA, X-ray diffraction patterns, SEM and EDS. The size of Au fine particles dispersed in the heat-treatmented gel was about 0.15∼0.23 $\mu\textrm{m}$ and the shape was most sphericity.

• Carbon letters
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• v.7 no.4
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• pp.259-265
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• 2006

Carbon-coated $TiO_2$ was prepared by $CCl_4$ solvent mixing method with the different heat treated temperatures (HTTs). Since the carbon layers derived from pitch on the $TiO_2$ particles were porous, the carbon-coated $TiO_2$ sample series showed a good adsorptivity. The values of BET surface areas measured were shown independently on the HTTs. The surface states by SEM present to the characterization of porous texture on the carbon-coated $TiO_2$ sample and carbon distributions on the surfaces. From XRD data, PT700 and PT750 were shown the X-ray diffraction patterns of the anatase $TiO_2$, but PT800 and PT850 were kept anatase-type structure even after heating at $800^{\circ}C$, though small amount of the rutile-type structure appears. The results of EDX microanalyses were observed for each sample show the spectra corresponding to almost all samples similar to C, O and Ti elements with an increase of HTTs. Finally, the excellent photoactivity of carbon-coated $TiO_2$ (especially, PT700 and PT750) could be attributed to the homogeneous coated carbon on the external surface and the structural anatase phase.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.4
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• pp.446-451
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• 2009

In this paper, we described the design and test results of a high output power amplifier MMIC developed by using 0.5um power pHEMT processes on a 6-inch GaAs wafer for the X-band T/R module application. In the MMIC design, we have used a simple on-chip gate active bias technology to compensate the threshold-voltage variation of pHEMT during the fabrication process and 16-to-1 power combining method to achieve the output power over 10watt. The fabricated chip has an output power over 12watts and maximum PAE of 32% over the frequency range of fo +/-750MHz.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.811-815
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• 1995

회토류계 영구자석은 종래의 Ferrite계나 Alnico계와 비교해서 대단히 강하여, 전기전자부품의 소형화에 크게 기여하고 있다. 최근에는, 전자기기산업 이외의 분야에 있어서도 그의 응용이 확대되어가고 있는 추세로 자성재료의 생산액은 매년 증가하고 있다. 회토류계 영구자석재료의 연구는 1960년대에 시작되어 Sm $Co_{5}$, Sm$_{2}$ $Co_{17}$ 화합물의 등장을 거쳐 현재는 1982년데 Sagawa 및 Croat가 독자적으로 발견한 Nd$_{2}$ Fe$_{14}$B 자석이 주류로 되고 있다. 그렇지만 이 화합물에는 다른 영구자석에 비하여 큐리온도가 낮은 결점이 있어서, 아직도 새로운 화합물의 탐색이 계속되고 있다. 그 중에서도, 1990년대에 Coey에 의해서 최초로 학회지에 보고되어진 Sm$_{2}$Fe$_{17}$N$_{x}$는, Nd$_{2}$Fe$_{14}$B와 같은 정도의 이론 최대에너지급, Sm $Co_{5}$에 대등한 거대한 이방성자장, 750K에 달하는 큐리온도등의 우수한 성질을 갖고 있어 Nd$_{2}$Fe$_{14}$B를 극복하는 자성재료로서 큰 기대가 되어진다. 되어진다.진다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

• Nuclear Engineering and Technology
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• v.51 no.3
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• pp.792-799
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• 2019

The present study aims to investigate the fluorination of thorium oxide ($ThO_2$) by ammonium hydrogen difluoride ($NH_4HF_2$). Fluorination was performed at room temperature by mixing $ThO_2$ and $NH_4HF_2$ at different molar ratios, which was then left to react for 20 days. Next, the mixtures were analyzed using X-ray diffraction (XRD) at the intervals of 5, 10, 15, and 20 days, followed by the heating of the mixtures at $450-750^{\circ}C$ with argon gas flow. The characterization of $ThF_4$ was established using X-ray diffraction (XRD) and scanning electron microscopy-dispersion X-ray spectroscopy (SEM-EDX). In this study, ammonium thorium fluoride was synthesized through the fluorination of $ThO_2$ at room temperature. The optimum molar ratio in synthesizing ammonium thorium fluoride was 1.0:5.5 ($ThO_2:NH_4HF_2$) with 5 days reaction time. In addition, the heating of ammonium thorium fluoride at $450^{\circ}C$ was sufficient to produce $ThF_4$. Overall, this study proved that $NH_4HF_2$ is one of the fluorination agents that is capable of synthesizing $ThF_4$.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.168-174
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• 1991

Ti-silicide was deposited by sputtering the composite target($TiSi_{2.6}$) on single-Si wafers and oxide on them. The heat treatment temperatures by rapid thermal annealing(RTA) have been varied in the range of $600-850^{\circ}C$ for 20seconds. It was not until RTA temperature was $800^{\circ}C$ that a stable $TiSi_2$ was formed, and the value of resistivity of that phase was $27~29{\mu}{\Omega}-cm$, which seems a little higher than that formed by the reactive method. The result of x-ray diffraction peals showed that till $750^{\circ}C$, C49 $TiSi_2$ phase was dominant, but at $800^{\circ}C$, at last, the phase was transformed into a stable C54 $TiSi_2$ phase. And, the result of x-ray photoeletron spectroscopy(XPS) measurements showed that the composition ratio of Ti and Si was 2 1 in the case of specimens treated at $800^{\circ}C$, The surface roughness of $TiSi_2$, which was condidered a weak point, was improved to a superior value of $17{\pm}1nm$, therefore increasing the possibility of applying $TiSi_2$ to semiconductor devices.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.31-36
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• 2003

In this study, nano-sized NiCuZn-ferrites for the multi-layered chip inductor application were prepared by a coprecipitation method and its electromagnetic properties were analyzed. Also, the property of low temperature sintering were studied with the initial heat treatment of powder.$(Ni_{0.4-x}Cu_xZn_{0.60})_{1+w}(Fe_2O_4)_{1-w}$ (x=0.2, w=0.03) were calcined at $300^{circ}C~750^{circ}C.$ The sintered NiCuZn-ferrites at $900^{\circ}C$ showed good apparent density $4.90g/cm^3,$ and magnetic properties of initial permeability 164 and quality factor 72. As the calcination temperature increase, the grain size of NiCuZn-ferrite increased with irregular grain distribution and its magnetic properties were deteriorated.

• Nuclear Engineering and Technology
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• v.55 no.12
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• pp.4642-4646
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• 2023

The Tb³⁺ or Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor were fabricated by funace at 1500 ℃ for 12 h using a solid state reaction. The XRD (X-ray diffraction_Panalytical X'Pert Pro) and FE-SEM (field emission scanning electron microscope) are measured to confirm the crystalline structure and surface morphology of the phosphor. The Tb³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor emits the lights in 470~650 nm wavelength range due to transitions from ⁵D₄ to ⁷F_j. Therefore, it shows the green region in the CIE chromaticity diagram under both UV and X-rays excitations. The Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor emits the lights in 550~750 nm wavelength range because of ⁵D_i to ⁷F_j. The emission is confirmed to be in the red region using the CIE chromaticity diagram. The Tb³⁺ or Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor shows the characteristic f-f transition with a long decay time, which is about several milliseconds. They have the high efficiency of light emission for X-ray because of their high effective Z number (Z_eff = 58.5) and density. Therefore, they are very much promising phosphors for X-ray imaging application in medical fields.