• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.189-197
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of Korean Ophthalmic Optics Society
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• v.15 no.4
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• pp.313-317
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• 2010

Purpose: The purpose of this study was to investigate the surface characteristics of plasma electrolytic oxidation (PEO) surface treatment on AZ31 magnesium alloy eyeglass frames. Methods: The plasma electrolytic oxidation (PEO) surface was created by varying the DC voltage. The oxidation layer of coating was measured using phase analysis by X-ray diffraction. The microstructural morphology was observed using a scanning electron microscopy. Coating layer and the concentration of elements were investigated using the energy dispersive X-ray spectra. Results: The MgO XRD peak was increased as the voltage increased, and the density of the surface oxide film was also increased. The changes in the composition of the EDS also showed a good agreement. Conclusions: The compound oxide crystallization of PEO oxide film layer was done by increasing formation of MgO as the voltage increased. The treatment at 65V and 60 sec showed the best results at surface state, contact angles and salt spray test.

• Journal of radiological science and technology
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• v.40 no.1
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• pp.93-99
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• 2017

Dose enhancement effects at megavoltage (MV) X and ${\gamma}-ray$ energies, and the effects of different energy levels on incident energy, dose enhancement agents, and concentrations were analyzed using Monte Carlo simulations. Gold, gadolinium, Iodine, and iron oxide ($Fe_2O_3$) were compared as dose enhancement agents. For incident energy, 4, 6, 10 and 15 MV X-ray spectra produced by a linear accelerator and a Co-60 ${\gamma}-ray$ were used. The dose enhancement factor (DEF) was calculated using an ICRU Slab phantom for concentrations of 7, 18, and 30 mg/g. The DEF was higher at higher concentrations of dose enhancement agents and at lower incident energies. The calculated DEF ranged from 1.035 to 1.079, and dose enhancement effects were highest for iron oxide, followed by iodine, gadolinium, and gold. Thus, this study contributes to improving the therapeutic ratio by delivering larger doses of radiation to tumor volume, and provides data to support further in vivo and in vitro studies.

• Progress in Medical Physics
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• v.27 no.1
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• pp.31-36
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• 2016

The paper discusses radiation dose of dual energy CT on which copper modulation layer, is mounted in order to improve diagnostic performance of the dual energy CT. The radiation dose is estimated using MCNPX and its results are compared with that of the conventional dual energy CT system. CT X-ray spectra of 80 and 120 kVp, which are usually used for thorax, abdominal, head, and neck CT scans, were generated by the SPEC78 code and were used for the source specification 'SDEF' card for MCNPX dose modeling. The copper modulation layer was located 20 cm away from a source covering half of the X-ray window. The radiation dose was measured as changing its thickness from 0.5 to 2.0 mm at intervals of 0.5 mm. Since the MCNPX tally provides only normalized values to a single particle, the dose conversion coefficients of F6 tally for the modulation layer-based dual energy CBCT should be calculated for matching the modeling results into the actual dose. The dose conversion coefficient is $7.2*10^4cGy/output$ that is obtained from dose calibration curve between F6 tally and experimental results in which GAFCHORMIC EBT3 films were exposed by an already known source. Consequently, the dose of the modulation layer-based dual energy cone beam CT is 33~40% less than that of the single energy CT system. On the basis of the results, it is considered that scattered dose produced by the copper modulation layer is very small. It shows that the modulation layer-based dual energy CBCT system can effectively reduce radiation dose, which is the major disadvantage of established dual energy CT.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.442-442
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• 2013

ZnO의 나노 구조는 화학적으로 안정하고 큰 결합에너지를 가지는 성질 때문에 청색 영역에서 작동하는 광전소자의 제작에 대단히 유용하다. 전기 화학 증착법으로 성장된 ZnO의 나노구조는 가격이 저렴하고 낮은 온도에서 성장이 가능하며 대면적화를 할 수 있는 장점이 있다. 전기 화학 증착법으로 ZnO을 성장할 때 ITO 기판을 음극으로 백금 전극을 양극으로 사용하였고 기준 전극은 Ag/AgCl을 사용하였다. Potassium chloride의 몰 농도를 변화하면서 ZnO 나노구조를 성장하였다. 성장한 ZnO 나노구조를 $400^{\circ}C$에서 2분 정도 열처리를 하였다. 성장된 ZnO을 X-선 회절 결과는 (0002) 피크가 $34.35^{\circ}$에서 나타났다. 주사 전자 현미경상은 Potassium chloride의 몰 농도가 낮을 때 성장한 ZnO 나노구조체가 고르게 성장되는 것을 알 수 있었다. Potassium chloride의 농도가 변화하면 ZnO 나노구조체의 형태가 변화하는 것을 알 수 있었다. 300 K에서 광루미네선스 스펙트럼은 형성된 나노구조가 엑시톤과 관련된 피크가 potassium chloride 농도에 따라 변화하게 되는 것을 알 수 있었다. 이 실험결과는 ZnO 나노구조의미세구조와 광학적 성질이 potassium chloride의 농도에 영향을 많이 받는 것을 알 수 있었다.

• New Physics: Sae Mulli
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• v.68 no.12
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• pp.1281-1287
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• 2018

In this study, $Al_xGa_{1-x}N$ films were grown on (0001) sapphire substrates by using metal-organic chemical vapor deposition (MOCVD). The crystallinity of the grown films was examined with X-ray diffraction (XRD) patterns. The surfaces and the chemical properties of the $Al_xGa_{1-x}N$ films were investigated using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The optical properties of the $Al_xGa_{1-x}N$ film were studied in a wide photon energy range between 2.0 ~ 8.7 eV by using spectroscopic ellipsometry (SE) at room temperature. The data obtained by using SE were analyzed to find the critical points of the pseudodielectric function spectra, $<{\varepsilon}(E)>=<{\varepsilon}_1(E)>+i<{\varepsilon}_2(E)>$. In addition, the second derivative spectra, $d^2<{\varepsilon}(E)>/dE^2$, of the pseudodielectric function for the $Al_xGa_{1-x}N$ films were numerically calculated to determine the critical points (CPs), such as the $E_0$, $E_1$, and $E_2$ structure. For the four samples (x = 0.18, 0.21, 0.25, 0.29) between a composition of x = 0.18 and x = 0.29, changes in the critical points (blue-shifts) with increasing Al composition at 300 K for the $Al_xGa_{1-x}N$ film were observed via ellipsometric measurements for the first time.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.156-161
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• 2015

The electronic structures of the potential candidate semiconductor nanoparticles for dye-sensitized solar cell (DSSC), such as $ZnSnO_3$ and $Zn_2SnO_4$, have been investigated by employing X-ray photoemission spectroscopy (XPS). The measured X-ray diffraction patterns show that $ZnSnO_3$ and $Zn_2SnO_4$ samples have the single-phase ilmenite-type structure and the inverse spinel structure, respectively. The measured Zn 2p and Sn 3d core-level XPS spectra reveal that the valence states of Zn and Sn ions are divalent (Zn 2+) and tetravalent (Sn 4+), respectively, in both $ZnSnO_3$ and $Zn_2SnO_4$. On the other hand, the shallow core-level measurements show that the binding energies of Sn 4d and Zn 3d core levels in $ZnSnO_3$ are lower than those in $Zn_2SnO_4$. This work provides the information on the valence states of Zn and Sn ions and their chemical bonding in $ZnSnO_3$ and $Zn_2SnO_4$.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.103-109
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• 2006

A target for a high-brightness microfocus x-ray tube, which is based on carbon nanotubes (CNT) as electron source, is designed. The x-ray tube has the following specifications: brightness of $1\times10^{11}phs/s.mm^2. mrad^2$, spot size $\~5{\mu}m$, and average x-ray energy of $20\~40 keV$. In order to meet the specifications, the design parameters of the target, such as configuration, material, thickness of the target as well as the required beam current, were optimized using computer code MCNPX. The design parameters were determined from the calculation of both x-ray spectrum and intensity distribution for a transmission type configuration. For the thin transmission type target to withstand vacuum pressure and localized thermal loading, the structural stability and temperature distribution were also considered. The material of the target was selected as molybdenum(Mo) and the optimized thickness was $7.2{\mu}m$ to be backed by $150{\mu}m$ beryllium (Be). In addition, the calculations revealed that the maximum temperature of the transmission target can be maintained within the limits of stable operation.

• Journal of radiological science and technology
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• v.39 no.4
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• pp.571-575
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• 2016

Monte Carlo simulations are widely used as the most accurate technique for dose calculation in radiation therapy. In this paper, the GATE6(Geant4 Application for Tomographic Emission ver.6) code was employed to calculate the dosimetric performance of the photon beams from a linear accelerator(LINAC). The treatment head of a Varian 21EX Clinac was modeled including the major geometric structures within the beam path such as a target, a primary collimator, a flattening filter, a ion chamber, and jaws. The 6 MV photon spectra were characterized in a standard $10{\times}10cm^2$ field at 100 cm source-to-surface distance(SSD) and subsequent dose estimations were made in a water phantom. The measurements of percentage depth dose and dose profiles were performed with 3D water phantom and the simulated data was compared to measured reference data. The simulated results agreed very well with the measured data. It has been found that the GATE6 code is an effective tool for dose optimization in radiotherapy applications.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.