• Korean Journal of Materials Research
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• 제9권10호
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• pp.1006-1011
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• 1999

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4$, $CH_4$ and $B_2H_6$. Microstructures and chemical properties of a-SiC:H films grown with varing the volume ratio of $CH_4$ to $SiH_4$ were characterized with various analysis methods including scanning electron microscopy(SEM), X-ray diffractometry(XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy. X-ray photoelectron spectroscopy(XPS), UV absorption spectroscopy and photoconductivity measurements. While Si:H films grown without $CH_4$ showed amorphous state, the addition of $CH_4$ during deposition enhanced the development of a microcrystalline phase. By introducing C atoms into the film, Si-Si and Si--$\textrm{H}_{n}$ bonds of a -Si:H films were gradually replaced by Si-C, C-C, and Si--$\textrm{C}_{n}\textrm{H}_{m}$ bonds. Consequently, the electrical resistivity and optical bandgap of a-SiC:H films were increased with the C concentration in the film.

• Journal of IKEEE
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• 제24권1호
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• pp.347-353
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• 2020

In this paper, the durability of an electromagnetic metamaterial absorber is verified in a temperature varying condition mimicking a maritime environment for the purpose of applying it to reduce the radar cross section of an integrated mast of the next-generation destroyer. To validate the durability, the reflectance of the electromagnetic metamaterial absorber was measured after storing it in a chamber that can control the temperature according to Procedure I of Method 501.7 included in MIL-STD-810H. Before and after the environmental test, both of the measured reflectances were retained less than -10 dB over the X band, that can guarantee the stealth functionality.

• Journal of the Korean earth science society
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• 제27권3호
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• pp.313-327
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• 2006

This study investigated the geochernical characteristics of Mn scale formed in groundwater wells at the Damyang area. The composition of Mn scale consists mainly of MnO and $SiO_2$. The content of Mn ranges from56.61wt.% to 68.69wt.%, and $SiO_2$ content ranges from 1.56wt.% to 10.45wt.%. The contents of Mo and Ba in Mn scale increased with increased depth; whereas, the content of Zn and Pb decreased with increased depth. Birnessite, quartz and feldspars were identified in Mn scales using x-ray powder diffraction studies. The IR absorption bands for Mn scales show major absorption band due to OH stretching, adsorbed molecular water, and birnessite stretching, respectively. In the SEM and EDS analysis, the Mn scale consists of botryoidal, spherical, spherulite, and empty straw structure. Those structure may be precipitated simply due to oversaturation with concentrated Mn content or may be formed through biogenic precipitation by Lepthothrix discophora. Under microanalysis using EDS on those structure surface of Mn scales, the Mn atomic percent range from 28 to 44, and such elements revealed the presence of Si, K, Na, Ca, Cl, Cu, Zn, and Ba.

• Clean Technology
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• 제27권4호
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• pp.291-296
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• 2021

Recently, there has been increasing demand for advancing photocatalytic techniques that are capable of the efficient removal of organic pollutants in water. TiO₂, a representative photocatalytic material, has been commonly used as an effective photocatalyst, but it is rather expensive and an alternative is required that will fulfill the requirements of both high performing photocatalytic activities and cost-effectiveness. In this work, ZnO, which is more cost effective than TiO₂, was synthesized by using a microreactor-assisted nanomaterials (MAN) process. The process enabled a continuous production of ZnO nanoparticles (NPs) with a flower-like structure with high uniformity. In order to resolve the limited light absorption of ZnO arising from its large band gap, Ag NPs were uniformly decorated on the flower-like ZnO surface by using the MAN process. The plasmonic effect of Ag NPs led to a broadening of the absorption range toward visible wavelengths. Ag NPs also helped inhibit the electron-hole recombination by drawing electrons generated from the light absorption of the flower-like ZnO NPs. As a result, the Ag-ZnO nanocomposites showed improved photocatalytic activities compared with the flower-like ZnO NPs. The photocatalytic activities were evaluated through the degradation of methylene blue (MB) solution. Scanning electron microscopy (SEM), x-ray diffraction (XRD), and energy-dispersive x-ray spectroscopy (EDS) confirmed the successful synthesis of Ag-ZnO nanocomposites with high uniformity. Ag-ZnO nanocomposites synthesized via the MAN process offer the potential for cost-effective and scalable production of next-generation photocatalytic materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제34권4호
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• pp.251-255
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• 2021

a-Si is commonly considered as a primary candidate for the formation of passivation layer in heterojunction (HIT) solar cells. However, there are some problems when using this material such as significant losses due to recombination and parasitic absorption. To reduce these problems, a wide bandgap material is needed. A wide bandgap has a positive influence on effective transmittance, reduction of the parasitic absorption, and prevention of unnecessary epitaxial growth. In this paper, the adoption of a-SiO_x:H as the intrinsic layer was discussed. To increase lifetime and conductivity, oxygen concentration control is crucial because it is correlated with the thickness, bonding defect, interface density (D_it), and band offset. A thick oxygen-rich layer causes the lifetime and the implied open-circuit voltage to drop. Furthermore the thicker the layer gets, the more free hydrogen atoms are etched in thin films, which worsens the passivation quality and the efficiency of solar cells. Previous studies revealed that the lifetime and the implied voltage decreased when the a-SiOx thickness went beyond around 9 nm. In addition to this, oxygen acted as a defect in the intrinsic layer. The D_it increased up to an oxygen rate on the order of 8%. Beyond 8%, the D_it was constant. By controlling the oxygen concentration properly and achieving a thin layer, high-efficiency HIT solar cells can be fabricated.

• Journal of the Mineralogical Society of Korea
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• 제22권3호
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• pp.241-248
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• 2009

Kaolinite was synthesized from amorphous $SiO_2$ and $Al(OH)_3{\cdot}xH_{2}O$ as starting materials by hydrothermal reaction conducted at $250^{\circ}C$ and $30\;kg/cm^2$. The acidity of the solution was adjusted at pH 2. The synthesized kaolinite was characterized by XRD, IR, NMR, FE-SEM, TEM and EDS to clarify the formational process according to the reaction time from 2 to 36 hours. X-ray diffraction patterns showed after 2 h of reaction time, the starting material amorphous $Al(OH)_3{\cdot}xH_{2}O$ transformed to boehmite (AlOOH) and after the reaction time 5 h, the peaks of boehmite were observed to be absent thereby indicating the crystal structure is partially destructed. Kaolinite formation was identified in the product obtained after 10 h of reaction and the peak intensity of kaolinite increased further with reaction time. The results of TGA and DTA revealed that the principal feature of kaolinite trace are well resolved. TGA results showed 13 wt% amount of weight loss and DTA analysis showed that exothermic peak of boehmite observed at $258^{\circ}C$ was decreased gradually and after 10 h of reaction time, it was disappeared. After 5 h of the reaction time, the exothermicpeak of transformation to spinel phase was observed and the peak intensiy increased with reaction time. The results of FT-IR suggested a highly ordered kaolinite was obtained after 36 hours of reaction. It was identified by the characteristic hydroxide group bands positioned at 3,696, 3670, 3653 and $3620\;cm^{-1}$. The development of the hydroxyl stretching between 3696 and $3620\;cm^{-1}$, depends on the degree of order and crystalline perfection. TEM results showed that after 15 h reaction time, curved platy kaolinite was observed as growing of (001) plane and after 36 h, the morphology of synthetic kaolinite exhibited platy crystal with partial polygonal outlines.

• Journal of Animal Science and Technology
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• 제45권6호
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• pp.901-910
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• 2003

Using the G-, C-, and NOR-banding techniques, a karyotyping for Korean Native Pig was performed. Blood samples were collected from 50 male Korean Native Pigs that had been bred at the National Livestock Research Institute and then blood cells were prepared from in vitro cultures followed by karyotyping; G-, C-, and NOR-banding patterns of metaphase chromosomes were analyzed. The karyotype of Korean Native Pig is 38, XX or XY which consists of 5 pairs of submetacentric chromosomes(Group I), 2 pairs of acrocentric chromosomes with short p-arm(Group II), 5 pairs of medium metacentric chromosomes(Group III), 6 pairs of acrocentric chromosomes(Group IV) and metacentric X and Y sex chromosomes. On GTG-banding, the Korean Native Pig exhibited a typical and identical banding pattern in each homologous chromosomes. Overall chromosomal morphology and positions of typical landmarks of the Korean Native Pig were virtually identical to those of Committee for the Standardized Karyotype of the Domestic Pig(CSKDP). However, numbers of G-bands of the Korean Native Pig chromosomes were more than those of CSKDP. In chromosomes 1, 3, 5, 6, 7, 8, 13, 14, 15, 16, 17, 18 and X, the Korean Native Pig exhibited more separated bands as compared with CSKDP. In C-banding patterns, although the quantity of heterochromatin was variable in each chromosome, most of the Korean Native Pig chromosomes had heterochromatic C-bands on centromeres. However, the heterochromatic C-band was constantly observed on the whole Y chromosome. In AgNOR staining, the NORs were located at centromeres on the chromosomes 8 and 10. The number of NORs per metaphase ranged from 2 to 4 giving a mean value of 2.13. The number of NORs were distributed on all chromosome pair 10 but not on chromosome 8. The sizes of NORs were also differed between homologous chromosomes 8. Numbers of NORs of Korean Native Pig were significantly higher than those of Yorkshire. The pattern of pig NORs was polymorphic in breeds, individuals and cells, especially on chromosome 8.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.425-426
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• 2013

IIIN계 물질 기반의 광 반도체는 직접 천이형 넓은 밴드갭 구조를 갖고 있기 때문에 적외선부터 가시광선 및 자외선까지를 포함한 폭 넓은 발광파장 조절이 가능하여 조명 및 디스플레이 관련 차세대 광원으로 많은 관심을 받고 있다. 일반적인 청색 및 녹색 발광영역의 활성층으로는 InGaN/GaN 다중양자우물구조를 사용하고 있으나, 장파장의 녹색 발광을 얻기 위해서는 인듐의 함유량이 증가하여야 한다. 하지만, 인듐의 함유량이 증가함에 따라서 InGaN/GaN 다중양자우물 구조내에서 인듐의 편석현상의 발생이 용이하게 되어 계면 특성을 저하할 뿐 아니라, 비발광 센터를 증가하여 발광 효율을 급격히 감소시키는 원인이 되고 있다. 또한, InGaN과 GaN의 큰 성장온도의 차이에 따라 800도 부근의 저온 영역에서 성장된 InGaN층이 1,000도 이상의 고온 영역에서 GaN층이 성장시 InGaN층의 열화 현상이 급격히 발생되고 있다. 이를 억제하기 위해서 금속유기화학증착법의 성장 변수 최적화, 응력제어, 도핑 등의 편석 억제기술 및 보호층이 사용되고 있다. 본 연구에서는 인듐함유량이 증가된 녹색 InGaN/GaN 다중양자우물구조에서 InGaN 우물층 상하부에 도입된 GaN 보호층에 따라 발생되는 양자우물구조의 광학 및 결정학적 특성 분석을 통해 GaN 보호층의 역할을 분석하고자 한다. 본 연구에서는 금속유기화학증착장치를 이용하여 사파이어 기판위에 GaN 템플릿을 성장하고, n-형 GaN, InGaN/GaN 다중양자우물구조 및 p-형 층을 성장하였다. 앞선 언급하였듯이, InGaN/GaN 다중양자우물구조내에 GaN 보호층의 역할을 규명하기 위하여 샘플 A의 경우는 보호층이 전혀 없는 구조이고, 샘플 B의 경우는 InGaN 우물층의 상단부에만, 샘플 C의 경우에는 우물층 상부 및 하단부 모두에 약 2.0 nm 두께의 GaN 보호층을 형성하였다. 이 보호층의 유무에 따른 다중양자우물구조의 계면 특성을 확인하기 위한 X-선 회절을 이용하였고, 광학적 특성을 확인하고 상온 포토루미네선스법을 이용하여 녹색 발광 파장의 변화 및 발광세기를 관찰하였다. 우선적으로, 상온 포토루미네선스법을 이용하여 각 샘플의 발광특성을 확인한 바 상하부 모두에 GaN 보호층이 존재하는 샘플 C의 경우 약 510 nm 부근에서 발광이 관찰되었지만, 상단부에 GaN 보호층이 존재하는 샘플 B는 약 495 nm영역에 발광이 확인되었다. 특히, 전혀 보호층이 존재하지 않는 샘플 A의 경우 약 440 nm에서 발광하는 현상을 관찰하였다. 이는 우물층 상단부 및 하단부에 존재하는 GaN 보호층이 In의 확산을 억제하는 것으로 판단된다. 또한, 발광파장 및 세기를 확인한 바, 보호층의 존재하지 않을수록 단파장화가 발생함에도 불구하고 발광세기는 급격히 약해지는 것으로 보아 계면특성이 저하되어 비발광센터가 증가되는 것으로 판단된다. 이를 구조적으로 확인하기 위하여 X-선 회절법을 통한 ${\omega}$/$2{\Theta}$ 스캔의 결과는 In의 0차 피크가 GaN 보호층이 없을 경우 GaN의 피크 방향으로 이동하는 것으로 보아 GaN 보호층은 우물층 성장 후 GaN 장벽층을 성장하기 위해 온도를 증가시키는 과정에서 In의 확산되는 것으로 판단된다. 또한, 하부 GaN 보호층의 경우 GaN 장벽층 성장 후 온도를 감소시키는 과정에서 성장되므로, 우물층으로부터 In의 탈착현상이 아닌 장벽층과의 상호 확산으로 판단된다. 또한, 계면특성을 확인하기 위해 InGaN의 X-선 위성 피크를 확인한 바 샘플 A의 경우 매우 넓고 약한 피크가 관찰된 반면, 보호층이 존재하는 샘플 B와 C의 경우 강하고 얇은 피크가 확인되었다. 이는 GaN 보호층의 도입으로 인해 계면특성이 향상되는 것으로 판단된다. 따라서, 우리는 InGaN/GaN 다중양자우물구조에서 GaN 보호층은 상부의 열화 억제 뿐아니라, 하부의 장벽층 및 우물층 사이의 상호확산을 억제하는 GaN 보호층의 도입을 통하여 우수한 계면 특성 및 비발광센터의 억제를 얻을 수 있을 것으로 생각되며, 이는 향후 GaN계 발광다이오드의 전계 발광특성을 증가하여 우수한 발광소자를 개발할 수 있을 것으로 기대된다.

• Water for future
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• 제5권1호
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• pp.27-36
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• 1972

This thesis is the study of the rainfall probability depth in the major areas of Korea, such as Seoul, Pusan and Taegu. The purpose of the paper is to analyze the rainfall in connection with the safe planning of the hydraulic structures and with the project life. The methodology used in this paper is the statistical treatment of the rainfall data in the above three areas. The scheme of the paper is the following. 1. The complementation of the rainfall data We tried to select the maximm values among the values gained by the three methods: Fourier Series Method, Trend Diagram Method and Mean Value Method. By the selection of the maximum values we tried to complement the rainfall data lacking in order to prevent calamities. 2. The statistical treatment of the data The data are ordered by the small numbers, transformed into log, $\sqrt{}, \sqrt[3]{}, \sqrt[4], and$\sqrt[5], and calculated their statistical values through the electronic computer. 3. The examination of the distribution types and the determination of the optimum distibution types By the $x^2-Test$ the distribution types of rainfall data are examined, and rejected some part of the data in order to seek the normal rainfall distribution types. In this way, the optimum distribution types are determined. 4. The computation of rainfall probability depth in the safety project life We tried to study the interrelation between the return period and the safety project life, and to present the rainfall probability depth of the safety project life. In conclusion we set up the optimum distribution types of the rainfall depths, formulated the optimum distributions, and presented the chart of the rainfall probability depth about the factor of safety and the project life.ct life.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제15권1호
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.