• Journal of the Korean Electrochemical Society
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• v.14 no.4
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• pp.225-230
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• 2011

CIGS solar cells are kind of thin film solar cells, which are studied several years. CdS buffer layer that makes heterojunction between window layer and absorbing layer was one of issue in the CIGS solar cell study. New types of buffer layer consisted of indium sulfide are being studied these days owing to high price and environmental harmful of CdS. In this study, we demonstrated electrochemical synthesis of indium sulfide film as a buffer layer, which is cheaper and faster than other methods. A uniform indium sulfide film was obtained by applying two different alternating potentials. The band gap of the film was optimized by controlling temperature during the electrochemical synthesis. Using x-ray photoelectron spectroscopy and diffraction method we confirmed that ${\beta}$-indium sulfide was formed on ITO electrode surface.

• Proceedings of the KIEE Conference
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• 2003.11b
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• pp.211-214
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• 2003

Current VOD embodiment way is embodied using PC base. However, achieved research that embody this by Embedded System that PC base is not. OS of this system used WindowsCE.net and x86core used having built-ined SC1200(National company's Geode's familys) by CPU and memory used 128MByte SDRAM. Used Mpeg Decoder for processing of video data, and used Enthernet Controller for Internet. Composite, component, S-Video of video output section of this system is and select one of these and connect on TV and did so that get into action. Actuality implementation manufactured necessary BIOS, WinodwsCE.NET Porting, DeviceDriver in system development and necessary simple Application in action confirmation, and Video Player used Window Media Player had included to WindowsCE.net. Therefore, treatise that see to supplement shortcomings of VOD service been embodying in current PC in Embedded System's form embody that there is sense do can.

• Journal of the Korean Institute of Intelligent Systems
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• v.15 no.1
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• pp.42-47
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• 2005

In this papcr, we address the 3D reconstruction of the indoor circumstance using what the data is extracted by a pall of image from Stereo Camera. Generally sucaking, there arc three methods to extract 3-Dimensional data using IR sensor, Laser sensor and Stereo camera sensor. The best is stereo camera sensor which can show a high performance at a reasonable price. We used 'Window Correlation Matching Method' to extract 3-Dimensional data in stereo image. We proposed new Method to reduce error data, said 'Histogram Weighted Hough Transform'. Owing to this mettled, we reduced error data in each stereo image. So reconstruction is well done. 3-Dimensional Reconstruction is accomplished by using the DirectX that is well known as 3D-Game development tool. We show that the stereo camera can be not only used to extract 3-dimensional data but also applied to reconstruct the 3-Dimensional circumstance. And we try to reduce the error data using various method.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.10
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• pp.2317-2328
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• 1997

The objective of this paper is to develop an algorithm for a real-time automatic fingerprint recognition system. The algorithm employs the wavelet transform(WT) and the dominat local orientation that derived from the gradient Gaussian(GoG) and coherence in determining the directions of ridges in fingerprint images. By using the WT, the algorithm does not require conventional preprocessing procedures such as smothing, binarization, thining and restoration. For recognition, two fingerprint images are compared in three different ST domains;one that represents the original image compressed to quarter(LL), another that shows vertical directional characteristic(LH), and third as the block that contains horizontal direction(HL) in WT domain. Each block has dominat local orientation that derived from the GoG and coherence. The proposed algorithm is imprlemented on a SunSparc-2 workstation under X-window environment. Our simulation results, in real-time have shown that while the rate of Type II error-Incorrect recognition of two identical fingerprints as the identical fingerprints-is held at 0%, the rate of Type I error-Incorrect recognitionof two identical fingerprints as the different ones-is 2.5%.

• Journal of the Korean Electrochemical Society
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• v.9 no.2
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• pp.59-63
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• 2006

The study is coated tin(IV) oxide coated on the titanium substrate electrodes by electrodepositon and dip-coating method and studied about that physical and electrochemical characterization by coating methods. After titanium substrate is etched in HCl, electrodespotion is coated $SnCl_2{\cdot}2H_2O$ in nitrate solution by pulse technique, dip-coating method is also used $SnCl_2{\cdot}2H_2O$ in 1;1V% HCl and coated by dipping and annealing process. tin(IV) oxide coated on titanium substrate electrodes by two coating methods are studied x-ray diffraction (XRD), scanning electron microscopy (SEM) to compare physical characterization of electrode and potential window by cyclic voltammetry (CV) to observe electrochemical characterization.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.458-458
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• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.19 no.4
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• pp.3-19
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• 2009

This paper proposes efficient scalar multiplication algorithms based on Montgomery ladder method. The proposed algorithm represents the scalar as ternary or quaternary and applies new composite formulas utilizing only x coordinate on affine coordinate system in order to improve performance. Furthermore, side-channel atomicity mechanism is applied on the proposed composite formulas to prevent simple power analysis. The proposed methods saves at least 26% of running time with the reduced number of storage compared with existing algorithms such as window-based methods and comb-based methods.

• Journal of Radiation Protection and Research
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• v.10 no.1
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• pp.14-28
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• 1985

The development of mono energetic photon sources using $K_{\alpha}$ fluorescence X-ray of pure material was carried out in the energy range below 100 keV. The monoenergetic photons are very useful in the calibration of the radiation measuring instruments and can be produced as the $K_{\alpha}$ fluorescence X-ray by irradiating the bremsstrahlung to the thin pure metal foils called ‘radiators’. In this experiment, several radiators such as $_{47}Ag,\;_{50}Sn,\;_{68}Er,\;_{70}Yb,\;and\;_{82}Pb$ provide the wide monoenergetic photon energy ranging from 20 keV to 80 keV. By the spectrometry with HpGe LEPS, spectral purity factors which measure the monochrometicity for the $K_{\alpha}$ fluorescence X-ray, were determined as $0.64{\sim}0.94$. Dosimetry for the purpose of the determination of the exposure rate with a 600cc thin window ionization chamber, which was calibrated by the standard free-air ionization chamber, was performed. Exposure rates ranging $8.3{\sim}232.5mR/h$ was obtained according to the $K_{\alpha}$ fluorescence X-ray energy for each radiator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.304-308
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• 2013

For the application to the window layer of $Cu(In,Ga)Se_2$(CIGS) solar cell, zinc oxide(ZnO) thin film was deposited at various temperatures by in-line pulsed DC sputtering. From the structural, optical, and electrical investigation and analysis, it was possible to obtain the lower thickness, the lower resistivity, and the higher transmittance at a higher process temperature. The energy band gap of ZnO was calculated using the transmittance data and was analyzed in terms of the dependency on temperature. From the X-ray diffraction(XRD) results, it was possible to conclude that a dominant peak was found about $34.2{\sim}34.6^{\circ}$(111) and crystallinity was obtained at a temperature above $150^{\circ}C$.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.741-744
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• 2005

Atomic layer deposition (ALD) is a very promising deposition technique for ZnO thin films. However, there have been very few reports on ZnO grown by ALD. Effects of substrate temperature in both ALD and post annealing on the microstructure and PL properties of ZnO thin films were investigated using X-ray diffraction, photoluminescence, and scanning electron microscopy. The temperature window of ALD is found to be between $130-180^{\circ}C$. The growth rate of ZnO thin film increases as the substrate temperature increases in the temperature range except the temperature window. The crystal quality depends most strongly on the substrate temperature among all the growth parameters of ALD. The crystallinity of the film is improved by increasing the growth thine per ALD cycle or doing post-annealing treatment. The grain size of the film tends to increase and the grain shape tends to change from a worm-like longish shape to a round one as the annealing temperature increases from $600^{\circ}C\;to\;1,000^{\circ}C$.