• Journal of the Korean Society of Radiology
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• v.4 no.1
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• pp.5-9
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• 2010

In recent, a digital x-ray detector attracted worldwide attention and there are many studies to commercialize. There are two methods in digital x-ray detector. This method is an Indirect method and Direct method. This study is to see the differences between the digital x-ray detector based on a-Se used in the existing indirect conversion method and an x-ray conversion material that has better SNR(Signal-to-noise ratio) and property than the a-Se. To solve the problem that is difficult to make a large area film using Screen-Print method, we used a Screen-Print method. In this study, we used a polyclystal $HgI_2$ as x-ray conversion material and a sample thickness is $150{\mu}m$ and an area is $3cm{\times}3cm$. ITO(Indium-Tin-Oxide) electrode was used as top electrode using a Magnetron Sputtering System and each area is $3cm{\times}3cm$, $2cm{\times}2cm$ and $1cm{\times}1cm$ and then we evaluated darkcurrent, sensitivity and SNR of the $HgI_2$ film are measured, then we evaluated the electrical properties. And we used a current integration mode when I-V test. This experiment shows that the sensitivity increases in accordance with the area of the electrode but the SNR is decreased because of the high darkcurrent. Through fabricating of various thicknesses and optimal electrodes, we will optimize SNR in the future work.

• Journal of the Korean Society of Radiology
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• v.4 no.4
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• pp.25-28
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• 2010

In this paper, the fabrication and feasibility study of clinical application with euripium doped gadollium oxide ($Gd_2O_3$:Eu) nano phosphor derived by low-temperature solution combustion method. From the fabricated phosphor, the photoluminescent characteristic and linearity as a function of phosphor film thickness were investigated to evaluate x-ray converstion properties. From the experimental results, the luminescent intensity was $2945pC/cm^2$-mR at $270{\mu}m$ $Gd_2O_3$:Eu film and this value is higher 1.2 time the conventional bulk phosphor, which is possible to imaging acquisition. And good linearity was shown at x-ray exposure range for clinical diagnostic application.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.111-118
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• 2023

MXene, a two-dimensional transition metal carbide or nitride, has recently attracted much attention as a lightweight and flexible electromagnetic shielding material due to its high electrical conductivity, good mechanical strength and thermal stability. In particular, the Ti-based MXene, Ti₃C₂T_x and Ti₂CT_x are reported to have the best electrical conductivity and electromagnetic shielding properties in the vast MXene family. Therefore, in this study, Ti₃C₂T_x and Ti₂CT_x films were prepared by vacuum filtration using Ti₃C₂T_x and Ti₂CT_x dispersions synthesized by interlayer metal etching and centrifugation of Ti₃AlC₂ and Ti₂AlC. The electrical conductivity and electromagnetic shielding efficiency of the films were measured after heat treatment at high temperature. Then, X-ray diffraction and photoelectron spectroscopy were performed to analyze the structural changes of Ti₃C₂T_x and Ti₂CT_x films after heat treatment and their effects on electromagnetic shielding. Based on the results of this study, we propose an optimal structure for an ultra-thin, lightweight, and high performance MXene-based electromagnetic shielding film for future applications in small and wearable electronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.494-497
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• 2004

본 연구는 방사선 영상센서 적용을 위한 $HgI_2$ 필름의 특성 평가에 관한 것으로서 X-선 조사조건별 인가전압에 따른 검출신호 특성을 조사하였다. 기존의 $HgI_2$ 검출기의 경우 신호량이 크다는 장점이 있으나 노이즈의 양이 크다. 이에 대한 해결책으로 보호층을 삽입하나 이 경우 X-선 조사에 따른 시간 응답 특성이 있어서 전하트랩현상(tailing effect)에 의한 영향이 크게 존재하였다. 따라서 본 논문에서는 이러한 문제점을 해결하고자 보호층으로써 a-Se 을 삽입하여 기존의 $HgI_2$ 검출기에서 사용되어지는 parlyene이 삽입된 검출기와 전기적 특성을 측정, 비교해보고자 한다. 제작방식으로는 대면적 제작이 용이한 스크린 프린팅 방식을 이용하여 두께 $140\;{\mu}m$와 $3\;cm\;{\times}\;2\;cm$ 면적으로 제조하였다. 측정결과, a-Se을 보호층으로 사용한 $HgI_2$ 필름이 민감도는 거의 비슷하나 누설전류가 안정화 되는데 걸리는 감소시간(decay time)이 parlyene을 사용한 구조에 비해 훨씬 낮았다. 또한 X선에 대한 민감도는 기존의 a-Se에 비해 월등히 높아 적은 방사선 조사량(radiation dose)에서도 신호검출이 가능하여 저선량이 요구되는 방사선 투시촬영(digital fluoroscopy) 적용에 유용할 것으로 기대된다.

• Journal of radiological science and technology
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• v.32 no.1
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• pp.53-60
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• 2009

This study examined the change in the attenuation of X-rays with the ROI (Region of Interest) in DR (Digital Radiography) according to the stomach contents by manufacturing a tissue equivalent material phantom to simulate real stomach tissue based on the assumption that there is some attenuation of X-rays and a difference in imaging quality according to the stomach contents. The transit dosage by the attenuation of X-rays decreased with increasing protein thickness, which altered the average ROI values in the film and DR images. A comparison of the change in average ROI values of the film and DR image showed that the image in film caused larger density changes with varying thickness of protein than the image by DR. The results indicate that NPO (nothing by mouth) is more important in film system than in DR system.

• Journal of the Korea Institute of Military Science and Technology
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• v.17 no.5
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• pp.577-584
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• 2014

In this study, the behavior of a shaped charge projectile's metal jet was analyzed using flash radiography. The projectile was installed horizontally to observe the behavior of jet for enough time. While the X-ray tube heads are fixed at one point, the behavior range of the jet is wide in this experimental set up, therefore the angle between the X-ray tube heads and the jet tip is changed continuously as jet moves forward. Jet particle's locations calculated from the X-ray films become different from their real positions under this situation because of the film to object distance(FTOD) and correction for error by FTOD is required. In this study, a method was devised to correct the error by FTOD and this was applied for the investigation of jet behavior of a 70 mm caliber's shaped charge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.79-82
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• 2003

a-Se film is known as promising medical X-ray detector material but a-Se as dopanted Tellurium is not available in X-ray detectors. a-Se thick film was grown by vacuum thermal evaporator to $3{\mu}m$ thickness. The characteristics of thick films were analyzed by XRD, U-V Meter, and SEM measurements. Te composition is 0.1, 0.3, 0.5, 0.7g. This paper is fundmental data for phosphor layer's essential parameter that selenium have absorption wavelength along to various Te concentration rate.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.591-596
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• 2006

Topology and molecular ordering of NPD(4,4'-bis-[N-(1-naphthyl)-N-phenyl-amino]biphenyl) thin films deposited under magnetic field with post-deposition annealing were investigated. NPD was deposited onto ITO glass substrates via thermal evaporation process in vacuum. It is of great importance for highly oriented organic/metal films to have improved device performances such as higher current density and luminance efficiency. AFM (Atomic Force Microscope) and XRD (X-Ray Diffraction) analyses were used to characterize the topology and structure of oriented NPD films. The multi-source meter was used to observe the current-voltage characteristics of the ITO (Indium-Tin Oxide) / NPD (4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl) / Al (Aluminum) device. While NPD thin films deposited under magnetic field were not molecularly well aligned according to the XRD results, the films after post-deposition annealing at $130^{\circ}C$ were well-oriented. AFM images show that NPD thin films deposited under magnetic field had a smoother surface than those deposited without magnetic field. The current-voltage performance of NPD thin films was improved due to the enhanced electron mobility in the well-aligned NPD films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.321-322
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• 2012

의료용 방사선 장비는 초기의 아날로그 방식의 필름 및 카세트에서 진보되어 현재는 디지털 방식의 DR (Digital Radiography)이 널리 사용되며 그에 관한 연구개발이 활발히 진행되고 있다. DR은 크게 간접방식과 직접방식의 두 분류로 나눌 수 있는데, 간접방식은 X선을 흡수하면 가시광선으로 전환하는 형광체(Scintillator)를 사용하여 X선을 가시광선으로 전환하고, 이를 Photodiode와 같은 광소자로 전기적 신호로 변환하여 방사선을 검출하는 방식을 말하며, 직접 방식은 X선을 흡수하면 전기적 신호를 발생 시키는 광도전체(Photoconductor)를 사용하여 광도전체 양단 전극에 고전압을 인가한 형태를 취하고 있는 가운데, X선이 조사되면 일차적으로 광도전체 내부에서 전자-전공쌍(Electron-hole pair)이 생성된다. 이들은 광도전체 양단의 인가되어 있는 전기장에 의해 전자는 +극으로, 전공은 -극으로 이동하여 아래에 위치한 Active matrix array을 통해 방사선을 검출하는 방식이다. 본 연구에서는 직접방식 X-ray 검출기에서 활용되는 a-Se을 ITO (Indium Thin oxide) glass 상단에 Thermal evaporation증착을 이용하여 두께 $50{\mu}m$, 33 넓이로 증착 시킨 다음, a-Se상단에 Sputtering증착을 이용하여 ITO를 11 cm, 22 cm, $2.7{\times}2.7cm$ 넓이로 증착시켜 상하부의 ITO를 Electrode로 이용하여 직접방식의 X-ray검출기 샘플을 제작하였다. 제작 과정 중 a-Se의 Thermal evaporation증착 시, 저진공 $310^{-3}_{Torr}$, 고진공 $2.210^{-5}_{Torr}$에서 보트의 가열 온도를 두 번의 스텝으로 나누어 증착 시켰다. 첫 번째 스텝 $250^{\circ}C$, 두 번째 스텝은 $260^{\circ}C$의 조건으로 증착하여 보트 내의 a-Se을 남기지 않고 전량을 소모할 수 있었으며, 스텝간의 온도차를 $10^{\circ}C$로 제어하여 균일한 박막을 형성 할 수 있었다. Sputtering증착 시, 저진공 $2.510^{-3}$, 고진공 $310^{-5}$에서 Ar, $O_2$를 사용하여 100 Sec간 플라즈마를 생성시켜 ITO를 증착하였다. 제작된 방사선 각각의 검출기 샘플 양단의 ITO에 500V의 전압을 인가하고, 진단 방사선 범위의 70 kVp, 100 mA, 0.03 sec 조건으로 X-ray를 조사시켜 ITO넓이에 따른 민감도(Sensitivity)와 암전류(Dark current)를 측정하였다. 측정결과 민감도(Sensitivity)는 X-ray샘플의 두께에 따른 $1V/{\mu}m$ 기준 시, 증착된 ITO의 넓이가 11 cm부터 22 cm, $2.7{\times}2.7cm$까지 각각 $7.610nC/cm^2$, $8.169nC/cm^2$, $6.769nC/cm^2$로 22 cm 넓이의 샘플이 가장 높은 민감도를 나타내었으나, 암전류(Dark current)는 $1.68nA/cm^2$, $3.132nA/cm^2$, $5.117nA/cm^2$로 11 cm 넓이의 샘플이 가장 낮은 값을 나타내었다. 이러한 데이터를 SNR (Signal to Noise Ratio)로 합산 하였을 시 104.359 ($1{\times}1$), 60.376($2{\times}2$), 30.621 ($2.7{\times}2.7$)로 11 cm 샘플이 신호 대 별 가장 우수한 효율을 나타냄을 알 수 있었다. 따라서 ITO박막의 면적이 클수록 민감도는 우수하나 그에 따른 암전류의 증가로 효율이 떨어짐을 검증 할 수 있었으며, 이는 ITO면적이 넓어짐에 따른 저항의 증가로 암전류에 영향을 끼침을 할 수 있었다. 본 연구를 통해 a-Se의 ITO 박막 면적에 따른 전기적 특성을 검증할 수 있었다.

• Journal of the Korean Society of Radiology
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• v.4 no.4
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• pp.37-40
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• 2010

In this paper, transport properties of charge carrier which is produced by x-ray exposure were investigated.. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. We measured transit time and drift mobility of charge carriers of a-Se photoconductor using time-of-flight method. We made a testing glass with a-Se of $100{\mu}m$ thickness on corning glass using thermal evaporation method. As a result of this experiment, electron and hole transit time was each $229.17{\mu}s$ and $8.73{\mu}s$ at $10V/{\mu}m$ electric field and drift mobility was each $0.00174cm^2/V{\cdot}s$, $0.04584cm^2/V{\cdot}s$. But the results shows us different measurement value of electron and charge drift mobility and it was investigated about charge transport properties and trap mechanism.