• The KIPS Transactions:PartC
• /
• v.15C no.4
• /
• pp.281-288
• /
• 2008

Recently, the advance of multimedia hardware has fostered the development of wireless multimedia sensor network which is able to ubiquitously obtain multimedia content such as image or audio from the environment. The multimedia data which has several characteristics such as large size and correlation between the data requires reliability in transmission. However, the existing solution which take the focus on the efficiency of network mainly, is not appropriate to transmit the multimedia data. In the paper, we proposes a reliable asynchronous image transfer protocol, RAIT. RAIT applies double sliding window method in node-to-node image tansfer to prevent the packet loss caused by network congestion. The double sliding window consists of one sliding window for the receiving queue, which is used for prevention of packet loss caused by communication failure between nodes and the other sliding window for the sending queue which prevents the packet loss caused by network congestion. the routing node prevents the packet loss and guarantees the fairness between the nodes by scheduling the packets based on the image non-preemptively. The RAIT implements the double sliding window method by cross layer design between RAIT layer, routing layer, and queue layer. The experiment shows that RAIT guarantees the reliability of image transmission compared with the existing protocol.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.6
• /
• pp.445-449
• /
• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• Current Photovoltaic Research
• /
• v.5 no.1
• /
• pp.28-32
• /
• 2017

In this paper, (Ga,Al):ZnO layers were deposited by sputtering to evaluate the device performance according to the thickness of the layer. As the thickness increased, low transmittance was observed, but the electrical resistance was improved. On the other hand, the highest efficiency was recorded at 400 nm device than a 500 nm of it. Therefore, since the critical thickness exists, it is necessary to set an adequate TCO layer thickness in consideration of the characteristics of the underlying film and the device.

• Journal of Institute of Control, Robotics and Systems
• /
• v.18 no.8
• /
• pp.774-779
• /
• 2012

We design and implement a RTT (Round Trip Time) based TCP (Transmission Control Protocol) for USN (Ubiquitous Sensor Network). We adopt a basic update algorithm for window size from FAST TCP that uses the queuing delay at link as the congestion measure. The designed TCP estimates the queuing delay at link from the measured RTT in the network layer, and updates the window size based on the estimated queuing delay. The designed TCP allows to utilize the full capacity of USN links and avoids the waste of the given link capacity that is common without the flow control in the transport layer. The experiment results show that the window size of the sender converges within a small range of variations without any packet loss, and verify the stability and performance of the designed TCP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.5
• /
• pp.439-444
• /
• 2005

We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

• Journal of the Korean Ceramic Society
• /
• v.47 no.5
• /
• pp.461-466
• /
• 2010

In this study, $Al_2O_3/TaAlO_4/SiO_2$ (A/TAlO/S) structures with tantalum aluminate charge trap layer were fabricated for Nand flash memory device. We evaluated the memory window and retention characteristic as the thickness of the tunnel oxide was varied among 3 nm, 4 nm, and 5 nm. All tunnel oxide thicknesses were measured by ellipsometer and TEM (Transmission Electron Microscope). The A/TAlO/S multi-layer film consisted of 5 nm tunnel oxide showed the best result of memory window of 1.57 V and retention characteristics. After annealing the 5 nm tunnel oxide A/TAlO/S multi-layer film at $900^{\circ}C$. The memory window decreased to 1.32 V. Moreover, the TEM images confirmed that the thickness of multi-layer structure decreased 14.3% after annealing and the program conditions of A/TAlO/S multi-layer film decreased from 13 V to 11 V for 100 ms. Retention properties of both as-deposited and annealed films stably maintained until to $10^4$ cycles.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.41 no.1
• /
• pp.58-65
• /
• 2016

Satellite communication is a wide area network (WAN) which provides communication service worldwide. However, the performance of TCP can be seriously degraded in the satellite networks due to limited bandwidth, long round-trip time (RTT) and high bit error rate (BER) over satellite links. In order to improve the performance of TCP, this paper proposes cross-layer Performance Enhancing Proxy (PEP) in digital video broadcasting-return channel via satellite (DVB-RCS) networks. The proposed protocol sets TCP Congestion Window (CWND) size by using satellite resource allocation information exchanged between TCP and the link-layer. we implement PEP testbed based on Linux to evaluate the performance of the proposed protocol. The simulation results show that the proposed protocol performs better than standard TCP both in single and multiple sessions in variant BER, because the proposed protocol sets TCP CWND size by using satellite resource allocation.

• Journal of the Korean Society for Precision Engineering
• /
• v.30 no.9
• /
• pp.1001-1006
• /
• 2013

Projection-based stereolithography is divided into constrained-surface and free-surface type according to controlling liquid layer. The constrained-surface type has a uniform layer thickness due to the use of a projection window, which covers the pattern generator such as liquid crystal display. However, the adhered resin on the projection window causes trouble and requires great separation force when the cured layer is separated from the window. To minimize the separation force, we developed a system to measure the separation force. The influence of material covering the pattern generator and the resin temperature is investigated in the system. Several structures according to the resin temperature and the velocity of z-axis elevation are compared. As a result, the fabrication condition to minimize the separation force reduces the process time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.186-189
• /
• 2002

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X-ray diffraction was used to determine the phase of the BLT thin films and the quality of the $CeO_2$ layer. The morphology of films and the interface structures of the BLT and the $CeO_2$ layers were investigated by scanning electron microscopy. The width of the memory window in the C-V curves for the MFIS structure is 4.78 V. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• Journal of Ocean Engineering and Technology
• /
• v.35 no.5
• /
• pp.336-346
• /
• 2021

The prediction of wave conditions is crucial in the field of marine and ocean engineering. Hence, this study aims to predict the significant wave height through machine learning (ML), a soft computing method. The adopted metocean data, collected from 2012 to 2020, were obtained from the Korea Institute of Ocean Science and Technology. We adopted the feedforward neural network (FNN) and long-short term memory (LSTM) models to predict significant wave height. Input parameters for the input layer were selected by Pearson correlation coefficients. To obtain the optimized hyperparameter, we conducted a sensitivity study on the window size, node, layer, and activation function. Finally, the significant wave height was predicted using the FNN and LSTM models, by varying the three input parameters and three window sizes. Accordingly, FNN (W48) (i.e., FNN with window size 48) and LSTM (W48) (i.e., LSTM with window size 48) were superior outcomes. The most suitable model for predicting the significant wave height was FNN(W48) owing to its accuracy and calculation time. If the metocean data were further accumulated, the accuracy of the ML model would have improved, and it will be beneficial to predict added resistance by waves when conducting a sea trial test.