• Journal of electromagnetic engineering and science
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• 제9권3호
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• pp.152-158
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• 2009

We have developed a novel digital feedback predistortion(DFBPD) linearization based on RF feedback PD for the wide bandwidth modulated signals. The wideband PD operation is carried out by combining the DFBPD and memory lookup table(LUT). To experimentally demonstrate the linearization performance of the proposed PD technique for wideband signal, a class-AB amplifier using an LDMOSFET MRF6S23140 with 140-W peak envelope power is employed at 2.345 GHz. For a forward-link 2FA wideband code-division multiple-access signal with 10 MHz carrier spacing, the proposed DFBPD with memory LUT delivers the adjacent channel leakage ratio at an 10 MHz offset of -56.8 dBc, while those of the amplifier with and without DFBPD are -43.2 dBc and -41.9 dBc, respectively, at an average output power of 40 dBm. The experimental result shows that the new DFBPD with memory LUT provides a good linearization performance for the signal with wide bandwidth.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.833-836
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• 1999

In this paper, a wideband MMIC LNA was designed using low Q matching network. Gains of 9.8~12.2 ㏈, and noise figures of 1.7~2.1 ㏈ were obtained from the fabricated wideband MMIC LNA in the frequency ranges of 1.5~2.5㎓. And maximum output power of 10.83 ㏈m were obtained at the center frequency of 2 ㎓. The chip size of the fabricated wideband MMIC low noise amplifier is 1.4 mm$\times$1.4 mm.

• Journal of electromagnetic engineering and science
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• 제9권1호
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• pp.7-11
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• 2009

An Ultra-WideBand(UWB) Low-Noise Amplifier(LNA) is proposed and is implemented in a $0.18-{\mu}m$ CMOS technology. The proposed UWB LNA provides excellent wideband characteristics by combining a High-Pass Filter (HPF) with a conventional resistive-loaded LNA topology. In the proposed UWB LNA, the bell-shaped gain curve of the overall amplifier is much less dependent on the frequency response of the HPF embedded in the input stage. In addition, the adoption of fewer on-chip inductors in the input matching network permits a lower noise figure and a smaller chip area. Measurement results show a power gain of + 10 dB and an input return loss of more than - 9 dB over 2.7 to 6.2 GHz, a noise figure of 3.1 dB at 3.6 GHz and 7.8 dB at 6.2 GHz, an input PldB of - 12 dBm, and an IIP3 of - 0.2 dBm, while dissipating only 4.6 mA from a 1.8-V supply.

• ETRI Journal
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• 제36권6호
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• pp.924-930
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• 2014

This paper presents a $0.13{\mu}m$ CMOS 3-level envelope delta-sigma modulation (EDSM) RF signal generator, which synthesizes a 2.6 GHz-centered fully symmetrical 3-level EDSM signal for high-efficiency power amplifier architectures. It consists of an I-Q phase modulator, a Class B wideband buffer, an up-conversion mixer, a D2S, and a Class AB wideband drive amplifier. To preserve fast phase transition in the 3-state envelope level, the wideband buffer has an RLC load and the driver amplifier uses a second-order BPF as its load to provide enough bandwidth. To achieve an accurate 3-state envelope level in the up-mixer output, the LO bias level is optimized. The I-Q phase modulator adopts a modified quadrature passive mixer topology and mitigates the I-Q crosstalk problem using a 50% duty cycle in LO clocks. The fabricated chip provides an average output power of -1.5 dBm and an error vector magnitude (EVM) of 3.89% for 3GPP LTE 64 QAM input signals with a channel bandwidth of 10/20 MHz, as well as consuming 60 mW for both channels from a 1.2 V/2.5 V supply voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권2호
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• pp.125-131
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• 2002

This paper presents MMIC drive and power amplifiers covering 6-18 ㎓. For simple wideband impedance matching and less sensitivity to fabrication variation, modified distributed topologies are employed in the both amplifiers. Cascade amplifiers with a self-biasing circuit through feedback resistors are used as unit gain blocks in the drive amplifier, resulting in high gain, high stability, and compact chip size. Self impedance matching and high-pass, low-pass impedance matching networks are used in the power amplifier. In measured results, the drive amplifier showed good return losses ($S_11,{\;}S_{22}{\;}<{\;}-10.5{\;}dB$), gain flatness ($S_{21}={\;}16{\;}{\pm}0.6{\;}dB$), and $P_{1dB}{\;}>{\;}22{\;}dBm$ over 6-18 GHz. The power amplifier showed $P_{1dB}{\;}>{\;}28.8{\;}dBm$ and $P_{sat}{\;}{\approx}{\;}30.0{\;}dBm$ with good small signal characteristics ($S_{11}<-10{\;}dB,{\;}S_{22}{\;}<{\;}-6{\;}dB,{\;}and{\;}S_{21}={\;}18.5{\;}{\pm}{\;}1.25{\;}dB$) over 6-18 GHz.

• ETRI Journal
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• 제30권1호
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• pp.158-160
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• 2008

A highly linear and efficient GaN HEMT Doherty amplifier for wideband code division multiple access (WCDMA) repeaters is presented. For better performance, the adaptive gate bias control of the peaking amplifier using the power tracking circuit and the shunt capacitors is employed. The measured one-carrier WCDMA results show an adjacent channel leakage ratio of -43.2 dBc at ${\pm}2.5$-MHz offset with a power added efficiency of 40.1% at an average output power of 37 dBm, which is a 7.5 dB back-off power from the saturated output power.

• 한국전자파학회지:전자파기술
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• 제3권1호
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• pp.11-19
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• 1992

본 연구에서는 초광대역증폭기를 설계하고자 GaAs MESFET 소신호 동가회로에 인덕터 피킹소자를 첨가하여 캐패시턴스의 영향을 감소시키는 주파수 피킹현상에 대하여 분석하였다. GaAs MESFET의 소신호 둥가회로의 전달함수로 부터 인턱터 피킹소자의 최적값을 유도하였으며, 매 우 균일이득을 갖는 귀환증폭모듈을 실현하였다. 실 주파수법에 의하여 입력과 출력단의 엄피던스정합회로를 설계하여 초광대역 마이크로파증폭기를 구현하였으며 컴퓨터 시률레이션에 의하여 셜계된 증폭기의 이득의 오차는 O.lGHz-12GHz에서 O.56dB의 매우 균일한 이득을 얻을 수 있었다.

• 한국전자파학회논문지
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• 제18권11호
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• pp.1262-1270
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• 2007

본 논문에서는 feedforward와 post-distortion 기법을 이용하여 평형 증폭기 내에서 발생하는 혼변조 왜곡 성분을 제거할 수 있는 새로운 왜곡 상쇄 메커니즘인 cross post-distortion 선형화 기법을 제안한다. 출력 동적 영역과 대역폭 측면에서 제안하는 선형화 방식은 기존의 feedforward 방식에 뒤지지 않는 성능을 가지고 있으면서 상대적으로 높은 효율을 제공한다. 이론적 뒷받침을 위해 제안하는 시스템과 feedforward 방식의 전력 증폭기와 오차증폭기의 전력 용량을 비교 분석하였고, IMT-2000 대역에서 실제 구현을 통하여 이를 실험적으로 뒷받침하였다. 최대 출력 전력 240 W의 기지국용 상용 대전력 증폭기에 적용했을 때, wideband code division multiple access (WCDMA) 4FA 신호에 대하여 평균 출력 전력 40 dBm에서 약 18.6 dB의 개선 효과를 얻었다. 제작된 전력 증폭기는 WCDMA 신호 기준으로 feedforward 방식에 비해 약 2 % 개선된 효율을 보였다.

• Journal of electromagnetic engineering and science
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• 제2권2호
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• pp.112-116
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• 2002

In this paper, the active integrated antenna(AIA) using a wideband printed dipole antenna and a balanced amplifier is designed and fabricated. The proposed active printed dipole antenna has characteristics of easy matching, wide bandwidth and higher output power To feed balanced signal to printed dipole, a Wilkinson power divider and delay lines are used. The measured result shows that, at 6 GHz center frequency, the impedance bandwidth is 22 % (VSWR < 2), 3 dB gain bandwidth is 28 %, the maximum gain is 14.77 dBi, and output power at P1 dB point is 23 dBm.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.265-268
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• 1999

In this paper, a wideband MMIC distributed amplifier was designed using the fabricated PHEMT with the unit gate width of 80 ${\mu}{\textrm}{m}$ and 4 gate fingers at our Lab. S$_{21}$ gains are 7.1 ~ 10.0 ㏈. Input and output reflection coefficients obtained from the distributed amplifier in the frequency range of DC~25 ㎓ are lower then -8 ㏈. A chip size of the designed wideband MMIC distributed amplifier is 1.9 mm $\times$ 1.1 mm.