• 제목/요약/키워드: Wide-gap materials

검색결과 144건 처리시간 0.028초

Fabrication of Schottky Device Using Lead Sulfide Colloidal Quantum Dot

  • Kim, Jun-Kwan;Song, Jung-Hoon;An, Hye-Jin;Choi, Hye-Kyoung;Jeong, So-Hee
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.189-189
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    • 2012
  • Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

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초크랄스키 방법으로 성장한 CaF2 단결정 분석 (Analysis of calcium fluoride single crystal grown by the czochralski method)

  • 이하린;나준혁;박미선;장연숙;정해균;김두근;이원재
    • 한국결정성장학회지
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    • 제32권6호
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    • pp.219-224
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    • 2022
  • 광학 윈도우, 프리즘, 렌즈 등에 사용되는 CaF2 단결정은 3개의 부격자를 가진 face-centered cubic(FCC) 구조를 가지고 있으며 밴드갭(12 eV)이 크고 넓은 파장영역에서 투과율이 우수하고 굴절률이 낮다는 특징이 있다. CaF2 단결정 성장은 대표적으로 높은 생산효율과 큰 결정을 만들 수 있는 초크랄스키(Czochralski) 방법으로 생산되고 있다. 이 연구에서는 초크랄스키 방법으로 성장한 일본의 Nikon 사와 미국의 M TI 사 (100)면, (111)면의 CaF2 단결정 상용화 웨이퍼의 결정성과 결함밀도를 분석하기 위해 X선 회절(XRD), XRC(X-ray rocking curve) 측정 및 Chemical Etching을 수행하였고 푸리에 변환 적외선 분광법(FT-IR)과 UV-VIS-NIS을 이용하여 CaF2 결정의 광학적 특성을 분석하였다. 다양한 분석 결과를 통해 CaF2 단결정의 다양한 분야에서의 응용가능성을 체계적으로 살펴보았다.

(100) 및 (111) 배향을 갖는 CaF2 단결정 기판의 결함 분석 (Defect analysis of calcium fluoride single crystal substrates with (100) and (111) orientation)

  • 최예진;강민규;이기욱;박미선;정광희;정해균;김두근;이원재
    • 한국결정성장학회지
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    • 제34권1호
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    • pp.8-15
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    • 2024
  • 다양한 광학 재료에 사용되는 CaF2 단결정은 밴드갭(12 eV)이 크고, 넓은 파장영역에서 투과율이 뛰어나며 낮은 굴절률과 분산을 가지는 특징이 있다. 이런 우수한 특성을 바탕으로 최근 리소그래피(Lithography) 공정에서 짧은 파장의 광원에서도 사용가능한 렌즈의 재료로 CaF2 단결정이 주목받고 있다. 다만 CaF2의 경우 157 nm에서 재료 고유의 복굴절이 존재하며, 이로 발생한 수차는 (100)면과 (111)면의 결합을 통해 보상할 수 있기 때문에 면 방향에 따른 특성을 조사하는 것이 필요하다. 이 연구에서는 초크랄스키(Czochralski) 방법으로 성장하여 상용화 된 CaF2 단결정 웨이퍼를 이용하여 면 방향에 따른 결정성, 광학적 특성을 분석하였다. 특히 chemical etching을 통해 etch pit의 형태가 면 방향에 따라 다르게 나타나는 것을 확인하였고, 결함 분석을 통해 결정 내 전위의 배열과 결함의 존재가 etch pit 형상에 영향을 주는 것을 확인하였다.

다중 슬릿 구조를 이용한 EFG 법으로 성장시킨 β-Ga2O3 단결정의 다양한 결정면에 따른 특성 분석 (Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure)

  • 장희연;최수민;박미선;정광희;강진기;이태경;김형재;이원재
    • 한국결정성장학회지
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    • 제34권1호
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    • pp.1-7
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    • 2024
  • β-Ga2O3는 ~4.8 eV의 넓은 밴드 갭과 8 MV/cm의 높은 항복 전압을 가지는 물질로 전력소자의 응용 분야에서 많은 주목을 받고 있다. 또한, 대표적인 WBG 반도체 소재인 SiC, GaN, 다이아몬드 등과 비교했을 때, 높은 성장률과 낮은 제조 비용으로 단결정 성장이 가능하다는 장점을 가진다[1-4]. 본 연구에서는 다중 슬릿 구조를 이용한 EFG(Edge-defined Film-fed Growth) 법을 통해 SnO2 0.3 mol% 도핑된 10 mm 두께의 β-Ga2O3 단결정을 성장시키는 데에 성공했다. 성장 방향과 성장 면은 각각 [010]/(001)로 설정하였으며 성장 속도는 약 12 mm/h이다. 성장시킨 β-Ga2O3 단결정은 다양한 결정면(010, 001, 100, ${\bar{2}}01$)으로 절단하여 표면 가공을 진행하였다. 가공이 완료된 샘플은 XRD, UV/VIS/NIR Spec., Mercury Probe, AFM, Etching 등의 분석을 통해 결정면에 따른 특성을 비교하였다. 본 연구는 고전압 및 고온 응용 분야에서 전력반도체 기술의 발전에 기여할 것으로 기대되며 더 나은 특성의 기판을 선택하는 것은 소자의 성능과 신뢰성을 향상시키는데에 중요한 역할을 할 것이다.

고효율 파워 반도체 소자를 위한 Mg-doped AlN 에피층의 HVPE 성장 (HVPE growth of Mg-doped AlN epilayers for high-performance power-semiconductor devices)

  • 배숭근;전인준;양민;이삼녕;안형수;전헌수;김경화;김석환
    • 한국결정성장학회지
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    • 제27권6호
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    • pp.275-281
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    • 2017
  • AlN는 넓은 밴드 갭 및 높은 열전도율로 인해 넓은 밴드 갭 및 고주파 전자 소자로 유망한 재료이다. AlN은 전력 반도체의 재료로서 더 큰 항복전압과 고전압에서의 더 작은 특성저항의 장점을 가지고 있다. 높은 전도도를 갖는 p형 AlN 에피층의 성장은 AlN 기반 응용 제품 제조에 중요하다. 본 논문에서는 Mg이 도핑된 AlN 에피층을 혼합 소스 HVPE에 의해 성장하였다. Al 및 Mg 혼합 금속은 Mg-doped AlN 에피 층의 성장을 위한 소스 물질로 사용하였다. AlN 내의 Mg 농도는 혼합 소스에서 Mg 첨가 질량의 양을 조절함으로써 제어되었다. 다양한 Mg 농도를 갖는 AlN 에피 층의 표면 형태 및 결정 구조는 FE-SEM 및 HR-XRD에 의해 조사하였다. Mg-doped AlN 에피 층의 XPS 스펙트럼으로 부터 혼합 소스 HVPE에 의해 Mg을 AlN 에피 층에 도핑할 수 있음을 증명하였다.

$Cl_2/BCl_3$/Ar 유도 결합 플라즈마에서 온도에 따른 $ZrO_2$ 박막의 식각 (Temperature Dependence on Dry Etching of $ZrO_2$ Thin Films in $Cl_2/BCl_3$/Ar Inductively Coupled Plasma)

  • 양설;김동표;이철인;엄두승;김창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.145-145
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    • 2008
  • High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

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RF 마그네트론 스퍼터링을 이용한 p 타입 투명전도 산화물 SrCu2O2 박막의 제조 (Fabrication of P-type Transparent Oxide Semiconductor SrCu2O2 Thin Films by RF Magnetron Sputtering)

  • 석혜원;김세기;이현석;임태영;황종희;최덕균
    • 한국재료학회지
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    • 제20권12호
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    • pp.676-680
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    • 2010
  • Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

Nearly single crystal, few-layered hexagonal boron nitride films with centimeter size using reusable Ni(111)

  • Oh, Hongseok;Jo, Janghyun;Yoon, Hosang;Tchoe, Youngbin;Kim, Sung-Soo;Kim, Miyoung;Sohn, Byeong-Hyeok;Yi, Gyu-Chul
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.286-286
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    • 2016
  • Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

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The quality investigation of 6H-SiC crystals grown by conventional PVT method with various SiC powders

  • Yeo, Im-Gyu;Lee, Won-Jae;Shin, Byoung-Chul
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.113-114
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    • 2009
  • Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

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시아노아조벤젠을 함유한 히드록시프로필 셀룰로오스 및 그 광가교 필름들의 열방성 액정 거동 (Thermotropic Liquid Crystalline Behavoir of Hydroxypropyl Celluloses Containing Cyanoazobenzene and Their Photocrosslinked Films)

  • 김효갑;정승용;양시열;마영대
    • 폴리머
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    • 제36권1호
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    • pp.76-87
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    • 2012
  • 세 종류의 히드록시프로필 셀룰로오스(HPC) 유도체들, 즉 에테르화도(DET)가 0.4에서 3의 범위에 있는 [6-{4'-(4-시아노페닐아조)펜옥시}]헥실옥시프로필 셀룰로오스들(CAHPCs), 완전치환 HPC의 아크릴산 에스터 (HPCA)와 CAHPC의 아크릴산 에스터들(CAHPCAs)을 합성하였다. 또한 HPCA와 CAHPCAs가 형성하는 열방성 액정 상에 UV 광을 조사시킴에 의해 가교된 HPCA(HPCAG)와 CAHPCAs(CAHPCAGs)를 제조하였다. HPC 그리고 HPCA와 동일하게 DET ${\leq}$ 1.2인 CAHPCs와 CAHPCAs는 광학피치들(${\lambda}_m$'s)이 온도상승에 의해 증가하는 양방성 콜레스테릭 상을 형성하는 반면 DET ${\geq}$ 1.4인 CAHPCs와 CAHPCAs는 단방성 네마틱 상을 형성하였다. DET ${\leq}$ 1.2인 CAHPCAs와 동일하게 DET ${\leq}$ 1.2인 CAHPCAGs는 넓은 온도범위에서 반사색깔을 나타냈다. 한편, DET ${\geq}$ 1.4인 CAHPCAs와 동일하게 DET ${\geq}$ 1.4인 CAHPCAGs는 네마틱 상의 전형적인 Schlieren 조직을 형성하였다. 이러한 사실은 액정 조직이 광가교에 의해 거의 그대로 고정됨을 시사한다. CAHPCAs와 CAHPCAGs의 액정 상에서 액체 상으로의 전이온도들($T_i$'s)은 DET가 증가함에 따라 낮아졌다. 그러나 DET가 동일할 경우, CAHPCAG가 CAHPCA에 비해 $T_i$는 높았다. 또한 CAHPCAGs가 CAHPCAs에 비해 ${\lambda}_m$의 온도의존성은 대단히 약하였다.