• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.314-322
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• 1997

The thin film processing and the applicability as a IMD material of SiO2 aerogels providing ultralow dielec-tric properties were studied. The SiO2 aerogel films with 0.5g/㎤ density (78% porosity) and 4000~21000$\AA$ thickness could be prepared at 25$0^{\circ}C$ and 1160 psig by supercritical drying of wet-gel films, which were spin-coated at the spin rate of 1000~7000 rpm on p-Si(111) wafer under the isopropanol atmosphere. The optimum viscosity of polymeric SiO2 sols for spin coating was in the range of 10~14 cP. The main fac-tors being able to control the film thickness and microstructures were found to be sol concentration, spin rpm, and aging time of wet-gel films. The dielectric constant of the SiO2 aerogel thin film was around 2.0 low enough to be applied to the next generation semiconductor device beyond the giga level.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.29-32
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• 2001

In this paper, the thermal oxidation behaviors and the electrical characteristics of the thermal oxide grown on SiC are discussed. For these studies the oxide layers with various thickness were on SiC in wet $O_2$ or dry $O_2$ at l15$0^{\circ}C$ and the MOS capacitors using the 350$\AA$ gate oxide grown in wet $O_2$ were fabricated and electrically characterized. It was found from the experimental results that the oxidation rate of SiC with the Si-face and with the carbon-face were about 10% and 50% of oxidation rate of Si. The C-V measurement results of the SiC oxide showed abnormal hysterisis properties which had ever been not observed for the Si oxide. And the hysterisis behavior was seen more significant when initial bias voltage was more negative or more positive. The hysterisis property of the SiC oxide was believed to be due the substantial amount of the deep level traps to exist at the interface between the oxide and the SiC substrate. The leakage of the SiC oxide was found to be one order larger than the Si oxide, but the breakdown strength was almost equal to that of the Si oxide.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.41-46
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• 2006

Wet etching process in recent semiconductor manufacturing is devided into batch and single wafer type. Batch type wet etching process provides more throughput with poor etching uniformity compared to single wafer type process. Single wafer process achieves better etching uniformity by boom-swing injected chemical on rotating wafer. In this study, etching characteristics of $SiO_2$ layer at room and elevated temperature is evaluated and compared. The difference in etching rate and uniformity of each condition is identified, and the temperature profile of injected chemical is theoretically calculated and compared to that of experimental result. Better etching uniformity is observed with single wafer tool with boom-swing injection compared to single wafer process without boom-swing or batch type tool.

• Korean Journal of Metals and Materials
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• v.47 no.11
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• pp.748-753
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• 2009

The surface morphology and the surface roughness of n-type SiC induced by wet-treatment using 45% KOH and buffered oxide etchant (BOE-1HF : $6H_2O$) were investigated by atomic force microscopy (AFM). While Si-face of SiC could be etched by alkali solutions such as KOH, acidic solutions such as BOE were hardly able to etch SiC. When the rough SiC samples were used, the surface roughness of etched sample was decreased after wet-treatment regardless of etchant, due to the planarization the of surface by widening of scratches formed by mechanical polishing. It was observed that the initial etching was affected by the energetically unstable sites, such as dangling bond and steps. However, when a relatively smooth sample was used, the surface roughness was rapidly increased after treatment at $180^{\circ}C$ for 1 hr and at room temperature for 4 hr by using KOH solution, resulting from the nano-sized structures such as pores and bumps. This indicates that porous SiC surface can be achieved by using purely chemical treatment.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.71-76
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• 1995

The thermal oxidation of Ge$_{0.2}$Si$_{0.8}$ in wet ambient has been investigated by Rutherford Backscattering Spectrometry(RBS). A uniform Ge$_{0.2}$Si$_{0.8}$O$_{2}$ oxide is formed at temperatures below 650.deg. C for polycrystalline and below 700.deg. C for single crystalline substrates. At higher temperatures Ge becomes depleted from the oxide and finally SiO$_{2}$ oxide is formed with Ge piled-ub behind it. The transition between the different oxide types depends also on the crystallinity of Ge$_{0.2}$Si$_{0.8}$. When a uniform Ge$_{0.2}$Si$_{0}$8/O$_{2}$ oxide grows, its thickness is proportional to the square root of the oxidation time, which suggests that the rate noting process is the diffusive transport of oxidant across the oxide. It is believed the oxidation is controlled by the competition between the diffusion of Ge or Si in Ge$_{0.2}$Si$_{0.8}$ and the movement of oxidation front.t.oxidation front.t.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.41-47
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• 1992

In SFB Process, after 110$0^{\circ}C$ annealing in wet OS12T(95$^{\circ}C$ HS12TO bubbling) atmosphere, the existence of the interfacial oxide film in micro-gap at Si-Si bonding interface was identified. The angle lapping/staining and SEM morphologies of bonding interface showed that the growing behavior of interfacial oxide made a contribution to eliminate the micro-gaps having a width of 200-300$\AA$. In case of the diodes composed of p-n wafer pairs made by SFB processes, the annealed one in wet OS12T atmosphere exhibited a dielectric breakdown phenomena of interfacial oxide at 37-40 volts d.c.

• Journal of the Korean Ceramic Society
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• v.22 no.4
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• pp.61-65
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• 1985

$BaTiO_3$ powders doped with $BaTiO_3$ and $Nb_2O_5$ at 9$0^{\circ}C$ for 1hr. were synthesized by Direct Wet Process. These powders were very homogeneous and fine particle size. To obtain the highe PTCR effect AST($1/3Al_2O_3$.$3/4SiO_2$.$1/4TiO_2$) and $MnO_2$ were added in the semiconduc-ting $BaTiO_3$. In this case $Bi_2O_3$ and $MnO_2$ were used in the form of $Bi(NO)_3$ and $MnCl_2$.$4H_2O$ solution for Direct Wet Process. $BaTiO_3$ doped Nb2O5 and $MnO_2$ demostrated greater PTCR effect than $BaTiO_3$ doped $Nn_2O_5$ only.

• Journal of the Korean Ceramic Society
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• v.45 no.10
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• pp.644-650
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• 2008

It has been proposed that the Cao-$SiO_2$ binary system can be good basic composition of bioactive glasses and glass-ceramics. In the present study, various kinds of Cao-$SiO_2$ gels were prepared by sol-gel method in order to control the microstructure which are related to their dissolution rate, induction period of apatite formation in body environment. Characterization of the gels were done by wet chemical analysis, SEM observation, FT-IR spectroscopy and XRD. The gelation time decreased with CaO content. However, the volume of all the dried gel decreased to 50% of the wet gels irrespective of increasement of CaO content. All the Cao-$SiO_2$ gels were amorphous and contained a large amount of silanol groups on their surfaces after heat treatment up to $800^{\circ}C$. The interconnected structure of the gel changed to agglomerated spherical powders when Ca content exceed to 20 mol%. Most of the Cao-$SiO_2$ gel showed amorphous when heat-treated up to $900^{\circ}C$. However, quartz and cristobalite was produced when heat-treated at $1000^{\circ}C$ and resultant microstructure of the gel contained microporous structure.

• The Journal of Engineering Research
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• v.3 no.1
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• pp.215-222
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• 1998

The effect of La and Si addition of the thermal stabilization of $\gamma-alumina$ powers have been studied. Reagent grade $La(NO_3)_3{\cdot}6H_2O$ and $Si(OC_2H_5)_4$ were used as starting materials. These additives were introduced by wet impregnation method. Both La and Si additives suppressed the sintering of alumina and were found to be good thermal stabilizers of $\gamma-alumina$. Especially, Si drastically suppressed the phase transition of alumina at high temperatures. The major mechanisms for the thermal stabilization of alumina were seemed to be new phase formation and retardation of surface diffusion by addition of La or Si into alumina matrix.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.190-190
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• 2010

Zinc oxide is the most attractive material due to the large direct band gap (3.37 eV), excellent chemical and thermal stability, and large exciton binding energy (60 meV). Recently, ZnO nanorods were used as the high efficient antireflection coating layer of solar cells based on silicon (Si). In this reports, we studied the effects of rapid thermal annealing (RTA) treatment on optical properties of ZnO nanorods. For fabrication of ZnO nanorods, there are many methods such as hydrothermal method, sol-gel method, and metal organic chemical vapor deposition method. Among of them, we used the conventional wet chemical method which is simple and low temperature growth. In order to synthesize the ZnO nanorods, the ZnO films were deposited on Si substrate by RF magnetron sputtering at room temperature and the samples were dipped to aqua solution containing the zinc nitrate and hexamethylentetramines (HMT). The synthesis process was achieved in keeping with temperature of $90-95^{\circ}C$ and under constant stirring. The morphology of ZnO nanorods on glass and Si was characterized by scanning electron microscopy. For the analysis of antireflection performance, the reflectance and transmittance were measured by spectrophotometer. And for analyzing the effects of RTA treatment on ZnO nanorods, crystalline properties were investigated by X-ray diffraction measurements and optical properties was estimated by photoluminescence spectra.