• Korean Journal of Optics and Photonics
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• v.8 no.2
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• pp.169-173
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• 1997

Most conventional lithography systems have been oriented to fabricate electronic devices. Therefore, it is not so easy to fabricate large aspect ratios of waveguide patterns with those systems. When considering costs and efficiencies, a laser lithography system provides number of benefit in realizing waveguide patterns. However, because the conventional laser lithography system could make only positive tone masks, it is inconvenient in determining the direction of the waveguide. A simple and reliable technique to produce negative tone masks was developed by using the laser beam writing. This technique was not sensitive to environmental situations such as dust, vibration, intensity variation. Making use of the technique a variety of device patterns such as Y-branch, directional coupler, and highly smooth S-shape bend could be successfully fabricated with a good contrast.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.61-70
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• 1999

An optical switch composed of three-identical, equally-spaced $Ti:LinbO_3$ waveguides and overlaid Al electrodes of CPW structure was designed and fabricated. Patterned Ti was diffused into z-cut $LinbO_3$ substrates at $1025^{\circ}C$ for 6 hours to make a three-waveguide directional coupler. $SiO_2$ buffer layer of $1.2{\mu}m$ was grown by the PECVD to reduce the propagation loss of TM mode, and Al electrodes were built on the layer for switching the guided beam. For an incident beam of ${\lambda}=1.3{\mu}m$, almost perfect optical coupling between two outer waveguides was observed. When an electric field was applied to detune the three waveguides anti-symmetrically, the optical switching phenomenon was successfully confirmed.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1778-1780
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• 2004

Microwave heating system of KSTAR consists of ECH and LHCD. ECH and LHCD offer the reliability of operation in the beginning of plasma formation and non-inductive current drive for long time steady state operation with maintaining MHD stability, respectively. LHCD demands 5 GHz of frequency and consists of c-band waveguide, 4-port circuitor, dry dummy load, dual directional coupler, E-bend, arc detector. Our system is a lineup type pulse modulator that has 45 kV of output pulse voltage, 90 A of pulse current, 4 us of pulse width. 1:4 step-up pulse transformer, 7 stages of PFN and thyratron tube (E2V, CX1191D) are used in this modulator. The purpose of this paper is to show the modulator design and experimental result.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1275-1277
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• 1995

We designed and constructed an extremly high power s-band traveling wave resonator for the test of high power microwave components using 80MW pulsed klystron with $4{\mu}s$ pulse width. The 10dB directional coupler for the input power coupling was used, and the ring consists of phase shifter, tuner, H-band, and other microwave components. The designed total electrical length of the system is 10 times of the waveguide wavelength, ${\lambda}_g$=15.3cm, and the measured total insertion loss is 0.15dB. The low power test measurment showed the power multiplication of 14.69. The design goal is to achieve the peak power of 300MW, pulse width $4{\mu}s$ with 30 pulse repetition rate. In this article we discuss the treveling wave resonant ring constructed at the PAL laboratory together with the test results.

• Korean Journal of Optics and Photonics
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• v.11 no.6
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• pp.423-428
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• 2000

We have demonstrated a -8 dB additional reduction in the intensity sidelobe of an apodized-interaction-strength guide-wave acousto-optic filter with a center passband of 1551.6 nm. Acoustic-intensity weighting was achieved by launching a surface acoustic wave (SAW) beam in a straight acoustic waveguide, and gradually transferring this SAW intensity to the active device, and back out, by evanescent-wave coupling across a 50 !lm barrier over a 19 rom interaction length. The intensity sidelobe was -4.27 dB for an unapodized filter with abmpt onset and cutoff of the interaction, but sidelobes were reduced to at most -12.68 dB for a SAW intensity with raised-cosine weighting. The RF driving power was 17.78 mW. A linear tuning rate of 8.86 nmIMHz and a spectral width of -1.7 nm were demonstrated. rated.

• Korean Journal of Optics and Photonics
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• v.10 no.1
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• pp.40-46
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• 1999

We present a new modified effective index method which can be used to analyze lightwave circuit devices in 3-dimensional structure fast and accruatly using 2-dimensional BPM (beam propagating method). This method can analyze the devices with the cross-section of rectangular, ridge, or similar shapes accurately but more quickly than the 3-dimensional BPM, which is impractical to use on account of long calculating time. As an example, we showed that the calculation error of coupling length in a directional coupler by this method is significantly less than the 2-dimensional BPM using the effective index method.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.545-554
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• 2003

Design of the optical modulator composed of a three-waveguide coupler and CPW traveling-wave electrodes was carried out. Switching phenomena of three-waveguide couplers were analyzed by using the coupled mode theory, and the coupling-lengths of the devices were calculated by means of the FDM. CPW traveling-wave electrodes were analysed by the CMM and SOR simulation technique in order to find the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electrolyte technique. The fabricated modulator chip was end-polished, pig-tailed and packaged in a brass mount with K-connector. The insertion loss and the switching voltage of the optical modulator were about 4㏈ and 19V, respectively. Network analyzer was used to obtain the S parameter and the corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted to be Z$_{c}$= 45 Ω, N$_{eff}$=2.20, and $\alpha$$_{0}$=0.055/cm√GHZ. The measured optical response R($\omega$) was compared with the theoretically estimated one, showing both responses agree well. The measurement results revealed that 3㏈ bandwidth turned out to be about 13 GHz.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.375-384
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• 2004

Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.1
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• pp.29-35
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• 2016

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensors utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator which uses a 3-dB directional coupler at the output and dipole patch antenna. The operation and design were proved by the BPM simulation. A dc switching voltage of ~16.6 V and an extinction ratio of ~14.7 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf power, the minimum detectable electric-fields are ~1.12 V/m and ~3.3 V/m corresponding to a dynamic range of about ~22 dB and ~18 dB at frequencies 10 MHz and 50 MHz, respectively. The sensors exhibit almost linear response for the applied electric-field intensity from 0.29 V/m to 29.8 V/m.