• Current Applied Physics
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• v.18 no.11
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• pp.1436-1440
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• 2018

SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.705-710
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• 2005

NIL (nanoimprint lithography) technique has demonstrated a high potential for wafer size definition of nanometer as well as micrometer size patterns. During the replication process by NIL, the stiction between the stamp and the polymer is one of major problems. This stiction problem is moi·e important in small sized patterns. An antistiction layer prevents this stiction ana insures a clean demolding process. In this paper, we were using a TCP (transfer coupled plasma) equipment and $C_4F_8$ as a precursor to make a Teflon-like antistiction layer. This antistiction layer was deposited on a 6 inch silicon wafer to have nanometer scale thicknesses. The thickness of deposited antistiction layer was measured by ellipsometry. To optimize the process factor such as table height (TH), substrate temperature (ST), working pressure (WP) and plasma power (PP), we were using a design of experimental (DOE) method. The table of full factorial arrays was set by the 4 factors and 2 levels. Using this table, experiments were organized to achieve 2 responses such as deposition rate and non-uniformity. It was investigated that the main effects and interaction effects between parameters. Deposition rate was in proportion to table height, working pressure and plasma power. Non-uniformity was in proportion to substrate temperature and working pressure. Using a response optimization, we were able to get the optimized deposition condition at desired deposition rate and an experimental deposition rate showed similar results.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1283-1288
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• 2003

The friction heat generated by the CMP process hasinfluence on removal rate and WIWNU(Within Wafer Non-Uniformity). Therefore, the object of this study is to find the distribution of temperature on pad surface during CMP process. To do this, the authors analyse the kinematics of CMP equipment to verify the sources of friction heat and compare the analysis result with the experimental results. Through the analysis and experiment conducted in this paper, we can predict the distribution of polishing temperature across the pad surface. Furthermore the result could help to predict the process conditions which could enhance the polishing results, such as WIWNU and removal rate of thin film to achieve more efficient process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.555-556
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• 2007

Through the single head kinematics, sliding distance is a movement of a pad within wafer. The sliding distance is very important to frictional heat, material removal, and so on. A Temperature distribution is similar to sliding distance. But is not same. Because of complex process factor in CMP. A platen velocity is a dominant factor in a temperature and material removal. WIWNU is low in head faster condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.192-193
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• 2006

A 16Mb ITIC FeRAM device was fabricated with BLT capacitors. The average value of the switchable 2 polarization obtained m the 32k-array (unit capacitor size: 068 ${mu}m^2$) capacitors was about 16 ${\mu}C/cm^2$ at 3V and the uniformity within an 8-inch wafer was about 2.8%. But a lot of cells were failed randomly during the measuring the bit-line signal of each cell. It was revealed that the Grain size and orientation of the BLT thin film were severely non-uniform. Therefore, the uniformity of the grain size and orientation was improved by changing the process conditions of post heat treatment. The temperature of nucleation step was the very effective on varying the microstructure of the BLT thin film. The optimized temperature of the nucleation step was $560^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.42-44
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• 2003

The paper presents the method and apparatus for conformal photoresist spray coating on the 3D structured substrate. The system consists of a high-temperature-rotational chuck, ultrasonic spray nozzle module, angle control module and nozzle moving module. The coating uniformity is acquired by controlling the moving speed of the ultrasonic spray nozzle across the substrate which is rotated constantly. To coat the photoresist conformally the spray angle of the nozzle and the temperature of the substrate are controlled during spray coating. The rotational chuck can be heated up by hot air or $N_2$. The photoresist (AZ1512) has been coated on the 3D structured wafer by spray coating system and the characteristics have been evaluated.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.84-91
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• 1994

A compact electron cyclotron resonance(ECR) plasma system composed of a microwave generator and a magnet coil was fabricated. A Langmuir single probe was used to investigate the plasma characteristics of the system through I-V measurements. The performance of the compact ECR plasma system was tested for the case of silicon etching reaction with $CF_{4}/O_{2}$(30%) mixed gas. Electron density and etch rate increased to maximum values and then decreased with increasing argon gas pressure, but electron temperature changed in the opposite way. The electron density and the electron temperature of argon gas plasma were 0.85${\times}~5.5{\times}10^{10}cm^{-3}$ and 4.5~6.0 eV, respectively, in the pressure range from $3{\times}10^{4}$ to 0.05Torr. The etch rate reached a maximum value at the position of 2.5cm from the bottom of plasma cavity. Etch rate uniformity was $\pm$6% across 6cm wafer. Anisotropic index was 0.75 at 1.5${\times}10^{-4}$Torr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.250-251
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• 2005

Tin dioxide (SnO$_2$) thin films have been prepared on Si wafer (100) by Plasma Enhanced Chemical Vapor Deposition (PECVD). SnO$_2$ thin films were prepared from mixtures of dibutyltin diacetate as a precursor, oxygen as an oxidant at 275, 325, 375, 425$^{\circ}C$, respectively. The microstructure of deposited films was characterized by X-ray diffraction and field emission scanning electron microscopy. Structural characteristics of prepared SnO$_2$ thin films were investigated with different substrate temperature. The deposition rate was linearly increased with substrate temperature. Surface morphology and uniformity of prepared thin film was excellent at 375$^{\circ}C$ and grain size was averagely 25nm.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.2
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• pp.132-136
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• 2004

A flat type $NO_2$ micro gas sensor was fabricated by MEMS technology. In order to heat up gas sensing material such as $WO_3$ to a target temperature, a micro hotplate was built on the gas sensor. The temperature distribution of micro gas sensor was analyzed by a CFD program, FLUENT. The results showed that the temperature of silicon wafer base was almost similar to that of the room temperature, which indicates that the heat generated at the micro hotplate heated up effectively the sensing material and its thermal isolation was kept. The uniformity of temperature on the sensing material can be improved by modifying the shape of micro hotplate.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.8 s.173
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• pp.27-33
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• 2005

Polishing pads play an important role in chemical mechanical polishing(CMP) which has recently been recognized at the most effective method to achieve global planarization. In this paper, we have investigated CMP characteristics as a change of groove density of polishing pads. The parameter $(K_n)$ is proposed to estimate groove density of pad. The $K_n$ is defined as groove area divided by pitch area. As the groove density value increased, removal rate increased to some point and then gradually saturated in case of increasing the groove density excessively. In addition Within wafer non-uniformity(WIWNU) worse as groove density increased excessively, although WIWNU improved as groove density increased. Also the uniformity of temperature of pad surface decreased as the groove density increased. It was because that the cooling effect increased as groove density increased. In other words, increasing the groove density which means the apparent contact area of pad has influence on amount of discharge of slurry during polishing process.