Current Applied Physics

  • 제18권11호
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  • Pages.1436-1440
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  • 2018
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  • 1567-1739(pISSN)
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  • 1567-1739(eISSN)
한국물리학회 (Korean Physical Society)
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DOI QR코드

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Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature

  • Song, Hohyun (Department of Physics, Korea Advanced Institute of Science and Technology) ;
  • Seo, Sanghun (R&D Center, Wintel Corp) ;
  • Chang, Hongyoung (Department of Physics, Korea Advanced Institute of Science and Technology)
  • 투고 : 2018.04.27
  • 심사 : 2018.08.24
  • 발행 : 2018.11.30
⟨ 이전 논문 다음 논문 ⟩

초록

SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).

키워드

과제정보

연구 과제 주관 기관 : MOTIE(Ministry of Trade, Industry & Energy)

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피인용 문헌

  1. Power characteristics of multiple inductively coupled RF discharges inside a metallic chamber vol.24, pp.1, 2022, https://doi.org/10.1088/2058-6272/ac363f