• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2002년도 추계학술대회 논문집
• /
• pp.1033-1036
• /
• 2002

Wafer bonding methods such as fusion and anodic bonding suffer from high temperature treatment, long processing time, and possible damage to the micro-scale sensor or actuators. In the localized bonding process, beating was conducted locally while the whole wafer is maintained at a relatively low temperature. But previous research of localized heating has some problems, such as non-uniform soldering due to non-uniform heating and micro crack formation on the glass capsule by thermal stress effect. To address this non-uniformity problem, a new heater configuration is being proposed. By keeping several points on the heater strip at calculated and constant potential, more uniform heating, hence more reliable wafer bonding could be achieved. The proposed scheme has been successfully demonstrated, and the result shows that it will be very useful in hermetic packaging. Less than 0.2 ㎫ contact Pressure were used for bonding with 150 ㎃ current input for 50${\mu}{\textrm}{m}$ width, 2${\mu}{\textrm}{m}$ height and 8mm $\times$ 8mm, 5mm$\times$5mm, 3mm $\times$ 3mm sized phosphorus-doped poly-silicon micro heater. The temperature can be raised at the bonding region to 80$0^{\circ}C$, and it was enough to achieve a strong and reliable bonding in 3minutes. The IR camera test results show improved uniformity in heat distribution compared with conventional micro heaters. For gross leak check, IPA (Isopropanol Alcohol) was used. Since IPA has better wetability than water, it can easily penetrate small openings, and is more suitable for gross leak check. The pass ratio of bonded dies was 70%, for conventional localized heating, and 85% for newly developed FP scheme. The bonding strength was more than 30㎫ for FP scheme packaging, which shows that FP scheme can be a good candidate for micro scale hermetic packaging.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
• /
• pp.254-257
• /
• 1996

A Rapid Thermal Processing (RTP) system operated below $500^{\circ}C$ has been designed and constructed. It uses an optical pyrometer for measuring wafer temperature, the sensing range of pyrometer is from $2.0{\mu}m$ to $2.4{\mu}m$. To remove the interference effect by IR emitted from lamps an IR filter is adapted which uses water. The best condition for Al alloy using the RTP system is $425^{\circ}C$ for ten seconds. The RTP system uses many lamps for supplying enough power in processing wafer because the absorption wavelength range of IF filter is from $1.3{\mu}m$ to $4.0{\mu}m$. However, reproducibility and uniformity is reduced due to the difference of lamp characteristics. Therefore, for improving the reproducibility and uniformity new RTP system using one lamp is designed. The new RTP system uses a focusing mirror and it focuses the light of lamp. The curverture of the focusing mirror is controlled to supply uniform power in processing wafer. The result of computer simulation shows the possibility of new RTP system using one lamp.

• 한국정밀공학회지
• /
• 제19권10호
• /
• pp.156-162
• /
• 2002

There are many factors affecting the results of CMP (Chemical Mechanical Polishing). Among them, the temperature is related to the removal rate and WIWNU (Within Wafer Non-Uniformity). In other words, the removal rate is proportional to the temperature and the variation of temperature distribution on a pad affects the non-uniformity within a wafer. In the former case, the active chemistry improves the rate of chemical reaction and the removal rate becomes better. But, there are not many advanced studies. In the latter case, a kinematical analysis between work-piece and pad can be obtained. And such result analysed from the mechanical aspect can be directly related to the temperature distribution on a pad affecting WIWNU. Meanwhile, the temperature change affects the quantities of both slurry and pad. The change of a pH value of the slurry chemistry due to a temperature variation affects the surface state of an abrasive particle and hence the agglomeration of abrasives happens above the certain temperature. And the pH alteration also affects the zeta potential of a pad surface and therefore the electrical force between pad and abrasive changes. Such results could affect the removal rate and etc. Moreover, the temperature changes the 1st and 2nd elastic moduli of a pad which are closely related to the removal rate and the WIWNU.

• 한국세라믹학회지
• /
• 제47권3호
• /
• pp.262-267
• /
• 2010

a-SiC has been thought as an ideal candidate for conventional silicon at many applications. However, the uniformity problem of deposition has been a obstacle for conventional use of a-SiC:H films. a-SiC:H films were deposited on (100) silicon wafer by RPECVD system in various temperature. HMDS and $H_2$ gas were used as a precursor and a carrier gas, respectively. The flow rate of HMDS source and $C_2H_2$ dilution gas was fixed in order to study the carbon effect on the film stoichiometric and bonding properties. The plasma power varied from 200 to 400W. We used three types of source delivery line to control the uniformity and film properties of deposited film. We showed that the change of source delivery line has effect on the film uniformity of deposited film and this change of line did not affect on film properties. Also, the change of deposition conditions has effect on the film uniformity.

• 대한기계학회논문집B
• /
• 제24권1호
• /
• pp.9-20
• /
• 2000

An analysis of heat and mass transfer has been carried out for multi-wafer Low Pressure Chemical Vapor Deposition (LPCVD). Surface radiation analysis considering specular radiation among wafers, heaters, quartz tube and side plates of the reactor has been done to determine temperature distributions of 150 wafers in two dimensions. Velocity, temperature and concentration fields of chemical gases flowing in a reactor with multi-wafers have been then determined, which determines Si deposition growth rate and uniformity on wafers using two different surface reaction models. The calculation results of temperatures and Si deposition have been compared and found to be in a reasonable agreement with the previous experiments.

• 반도체디스플레이기술학회지
• /
• 제15권4호
• /
• pp.33-35
• /
• 2016

In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.47-48
• /
• 2007

A CMP Process has many factors that affect result of a polished wafer. Dominant factors are velocity, pressure and temperature in process. A pad profile is also considered as affecting factor of CMP. Accoding to variation of a pad profile, the each pan of a wafer is differently pressured. It appears to affect the uniformity of a wafer. A pad profile varies as a swing arm conditioner which have been ordinarily used in industry. A swing arm conditioner has several sectors in its swing path. This study aims that a wafer get a good uniformity as swing arm conditioner's path on pad is analyzed and simulated. Through the simulation, tendency of pad profile after conditioning will be predicted and the result of simulation compared with the result of experiment. The optimized pad profile would be made by to vary swing arm's velocity on each sector. In order to maintain the optimized profile, conditioner design or swing arm's velocity should be changed and designed.

• 반도체디스플레이기술학회지
• /
• 제20권2호
• /
• pp.92-97
• /
• 2021

The importance of processes in cryogenic environments is increasing in a way to address problems such as critical dimension (CD) narrow and bottlenecks in micro-processing. Accordingly, in this paper, we proceed with the design and analysis of Electrostatic Chuck(ESC) and Coolant in cryogenic environments, and present optimal model conditions to provide the temperature distribution analysis of ESC in these environments and the appropriate optimal design. The wafer temperature uniformity was selected as the reference model that the operating conditions of the refrigerant of the liquid nitrogen in the doubled aluminum path were excellent. Design of simulation (DOS) was carried out based on the wheel settings within the selected reference model and the classification of three mass flow and diameter case, respectively. The comparison between factors with p-value less than 0.05 indicates that the optimal design point is when five turns of coolant have a flow rate of 0.3 kg/s and a diameter of 12 mm. ANOVA determines the interactions between the above factor, indicating that mass flow is the most significant among the parameters of interests. In variable selection procedure, Case 2 was also determined to be superior through the two-Sample T-Test of the mean and variance values by dividing five coolant wheels into two (Case 1 : 2+3, Case 2: 3+2). Finally, heat transfer analysis processes such as final difference method (FDM) and heat transfer were also performed to demonstrate the feasibility and adequacy of the analysis process.

• 반도체디스플레이기술학회지
• /
• 제1권1호
• /
• pp.9-13
• /
• 2002

A polyimide-type electrostatic chuck (ESC) was fabricated for the application of holding 8-inch silicon wafers in the oxide etching equipment. For the fabrication of the unipolar ESC, core technologies such as coating of polyimide films and anodizing treatment of aluminum surface were developed. The polyimide films were prepared on top of thin coated copper substrates for the good electrical contacts, and the helium gas cooling technique was used for the temperature uniformity of the silicon wafers. The ESC was essentially working with an unipolar operation, which was easier to fabricate and operate compared to a bipolar operation. The chucking force of the ESC has been measured to be about 580 gf when the applied voltage was 1.5 kV, which was considered to be enough force to hold wafers during the dry etching processing. The employment of the ESC in etcher system could make 8% enhancement of the wafer processing yield.

• 한국전기전자재료학회논문지
• /
• 제19권6호
• /
• pp.512-518
• /
• 2006

In this paper, we investigated the deposition of pentacene thin film on a large area substrate by Organic Vapor Phase Deposition(OVPD) and applied it to fabrication of Organic Thin Film Transistor(OTFT). We extracted the optimum deposition conditions such as evaporation temperature of $260^{\circ}C$, carrier gas flow rate of 10 sccm and chamber vacuum pressure of 0.1 torr. We fabricated 72 OTFTs on the 4 inch size Si Wafer, Which produced the average mobility of $0.1{\pm}0.021cm^2/V{\cdot}s$, average subthreshold slope of 1.04 dec/V, average threshold voltage of -6.55 V, and off-state current is $0.973pA/{\mu}m$. The overall performance of pentacene TFTs over 4 ' wafer exhibited the uniformity with the variation less than 20 %. This proves that OVPD is a suitable methode for the deposition of organic thin film over a large area substrate.