• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 금형가공,미세가공,플라스틱가공 공동 심포지엄
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• pp.193-197
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• 2005

This paper presents a method by which multiple holes of ultra small size can be punched simultaneously. Silicon wafers were used to fabricate punching die. Workpiece used in the present investigation were the rolled pure copper of $3{\mu}m$ in thickness and CP titanium of $1.5{\mu}m$ in thickness. The metal foils were punched with the dies and arrays of circular and rectangular holes were made. The diameter of holes ranges from $2-10{\mu}m$. The process set-up is similar to that of the flexible rubber pad forming or Guerin process. Arrays of holes were punched successfully in one step forming. The punched holes were examined in terms of their dimensions, surface qualities, and potential defect. The effects of the die hole dimension on ultra small size hole formation of the thin foil were discussed. The optimum process condition such as proper die shape and diameter-thickness ratio (d/t) were also discussed. The results in this paper show that the present method can be successfully applied to the fabrication of ultra small size hole array in a one step operation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.274.2-274.2
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• 2013

We described a simple and efficient fabrication method for generating microfluidic channels with a circular-cross sectional geometry by exploiting the reflow phenomenon of a thick positive photoresist. Initial rectangular shaped positive photoresist micropatterns on a silicon wafer, which were fabricated by a conventional photolithography process, were converted into a half-circular shape by tuning the temperature to around $105^{\circ}C$. Through optimization of the reflow conditions, we could obtain a perfect circular micropattern of the positive photoresist, and control the diameter in a range from 100 to 400 ${\mu}m$. The resultant convex half-circular photoresist was used as a template for fabricating a concave polydimethylsiloxane (PDMS) through a replica molding process, and a circular PDMS microchannel was produced by bonding two half-circular PDMS layers. A variety of channel dimensions and patterns can be easily prepared, including straight, S-curve, X-, Y-, and T-shapes to mimic an in vivo vascular network. To inform an endothelial cell layer, we cultured primary human umbilical vein endothelial cells (HUVECs) inside circular PDMS microchannels, and demonstrated successful cell adhesion, proliferation, and alignment along the channel.

• 한국표면공학회지
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• 제32권3호
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• pp.389-392
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• 1999

We employed cobalt-disilicide for high-speed logic devices. We prepared stable and low resistant $CoSi_2$ through typical fabrication process including wet cleaning and rapid thermal process (RTP). We sputtered 15nm thick cobalt on the wafer and performed RTP annealing 2 times to obtain 60nm thick $CoSi_2$. We observed spherical shape voids with diameter of 40nm in the surface and inside $CoSi_2$ layers. The voids resulted in taking over abnormal junction leakage current and contact resistance values. We report that the voids in $CoSi_2$ layers are resulted from surface pits during the ion implantation previous to deposit cobalt layer. Silicide reaction rate around pits was enhanced due to Gibbs-Thompson effects and the volume expansion of the silicidation of the flat active regime trapped dimples. We confirmed that keeping the buffer oxide layer during ion implantation and annealing the silicon surface after ion implantation were required to prevent void defects in CoSi$_2$ layers.

• Tribology and Lubricants
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• 제38권4호
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• pp.152-161
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• 2022

Chemical mechanical planarization (CMP) is a technology that planarizes the surfaces of semiconductor devices using chemical reaction and mechanical material removal, and it is an essential process in manufacturing highly integrated semiconductors. In the CMP process, a conditioning process using a diamond conditioner is applied to remove by-products generated during processing and ensure the surface roughness of the CMP pad. In previous studies, prediction of pad wear by CMP conditioning has depended on numerical analysis studies based on mathematical simulation. In this study, using an artificial neural network, the ratio of conditioner coverage to the distance between centers in the conditioning system is input, and the average conditioning density, standard deviation, nonuniformity (NU), and conditioning density distribution are trained as targets. The result of training seems to predict the target data well, although the average conditioning density, standard deviation, and NU in the contact area of wafer and pad and all areas of the pad have some errors. In addition, in the case of NU, the prediction calculated from the training results of the average conditioning density and standard deviation can reduce the error of training compared with the results predicted through training. The results of training on the conditioning density profile generally follow the target data well, confirming that the shape of the conditioning density profile can be predicted.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.194-194
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• 2003

As a result of the recent miniaturization an enhancement in the performance of thin film inductors and thin film transformers, there are increased demands for the thin films with high magnetic permeability in the high frequency range, high saturation magnetization, in high electrical resistivity, and low coercive force. In order to improve high frequency properties, we will investigate anisotropy field by shape and size of pattern. The Fe-Al-O thin films of 16mm and 1 $\mu\textrm{m}$ thickness were deposited on Si wafer, using RF magnetron reactive sputtering technique with the mixture of argon and oxygen gases. The fabricating conditions are obtained in the working partial pressure of 2mTorr, O$_2$ partial pressure of 5%, input power of 400W, and Al pellets on an Fe disk with purity of 99,9%. Magnetic properties of the continuous films as followed: the 4$\pi$M$\_$s/ of 19.4kG, H$\_$c/ of 0.6Oe, H$\_$k/ of 6.0Oe and effective permeability of 2500 up to 100㎒ were obtained. In this work, we expect to enhance effect of magnetic anisotropy on patterned of Fe-Al-O thin films.

• 폴리머
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• 제27권3호
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• pp.217-225
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• 2003

약물의 방출 경향을 제어할 목적으로 폴리비닐피롤리돈 (PVP) 또는 염화나트륨을 함유한 항암제 1,3-bis(2-chloroethyl)-1-nitrosourea (BCNU, carmustine)/poly(L-lactide-co-glycolide) (PLGA) 웨이퍼를 직접 압축성형 방법에 의해 직경 3 mm와 두께 1 mm의 조건으로 제조하였다. 생체외 방출실험에서 BCNLT/PLGA 웨이퍼로부터 약물 방출거동은 웨이퍼에 함유된 첨가제에 의해 조절할 수 있었다. BCNU의 초기 방출량과 방출속도 및 기간은 염화나트륨 또는 PVP의 첨가에 외해 변화하였다. 9L gliosarcoma세포를 이용한 생체 외 항암 활성 실험에서 첨가제가 함유된 웨이퍼로부터 방출된 BCNU를 처리한 세포의 생존율을 분석하여 평가했고, 그 결과 지속적으로 9L gliosarcoma세포의 성장을 억제함을 확인하였다. 9L gliosarcoma세포에 대한 첨가제 함유 BCNU/PLGA 웨이퍼로부터 방출된 BCNU 약효 검색을 통하여 웨이퍼로부터 BCNU가 지속적으로 방출되어 9L gliosarcoma세포의 생존과 증식을 효과적으로 억제함을 확인하였다. 특히, 첨가제 함유 BCNU/PLGA 웨이퍼의 지속적인 성장 억제는 첨가제를 함유하지 않은 웨이퍼의 것보다 더욱 효과적이었다. 또한 염화나트륨 함유 BCNU/PLGA 웨이퍼가 PVP 함유 BCNU/PLCA 웨이퍼보다 세포 증식 억제 효과가 뛰어남을 보였다.

• 한국표면공학회지
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• 제46권4호
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• pp.145-152
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• 2013

The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.

• 보존과학회지
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• 제37권6호
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• pp.791-800
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• 2021

보물로 지정되어 있는 남명천화상송증도가(南明泉和尙頌證道歌)의 삼성본(三省本: 보물 제 758-1호)과 공인본(空印本: 보물 제758-2호)의 사진 이미지를 비교 분석하여 두 판본 간의 차이점을 조사하였다. 공인본의 보물지정 당시인 2012년의 보고서에 따르면 두 개의 판본은 모두 같은 판에서 인출된 것이며 공인본이 삼성본보다 후쇄본으로 추정된다고 한다. 두 개의 판본은 구성, 광곽의 형태, 글자체에 이르기까지 매우 유사하여 육안에 의한 확인만으로는 그 차이를 구별하기 쉽지 않아 전문가들의 주관적의 의견을 수렴하여 결론을 도출한 것으로 추정된다. 본 연구에서는 이미지 분석을 통하여 각각의 판본상에 나타난 인쇄특징을 바탕으로 인출시기의 전후관계 및 동일한 판에서 인쇄된 것인지 아니면 서로 다른 판에서 인쇄된 것인지 판단할 수 있는 근거자료를 수집하여 정리하였다. 면밀한 이미지 비교와 분석의 결과, 삼성본과 공인본은 서로 다른 판에서 인출된 것이며 인출시기도 공인본이 삼성본에 비해서 후쇄본이라는 보고서의 내용도 수긍하기 어렵다는 결론에 도달하였다. 또한 삼성본에서 볼 수 있는 목판인쇄의 특징과는 사뭇 다른 특징들이 관찰되어 공인본의 인출에 사용된 인쇄기술 및 인출시기에 관한 추가조사 및 후속연구가 필요할 것으로 보인다.

• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.31-36
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• 2015

전자소자의 다기능, 고밀도, 고성능, 그리고 소형화는 전자 패키지 기술에 초미세 피치 플립 칩, 3D 패키지, 유연 패키지, 등 새로운 기술 패러다임 전환을 가져왔으며, 이로 인해 패키지 된 칩의 열 관리는 소자의 성능을 좌우하는 중요한 요소로 대두되고 있다. Heat sink, heat spreader, TIM, 열전 냉각기, 등 많은 소자 냉각 방법들 중 본 연구에서는 냉매를 이용한 on-chip 액체 냉각 모듈을 Si 웨이퍼에 제작하고, 마이크로 채널 디자인에 따른 냉각 효과를 분석하였다. 마이크로 채널은 딥 반응성 이온 에칭을 이용하여 형성하였고, 3 종류 디자인(straight MC, serpentine MC, zigzag MC)으로 제작하여 마이크로 채널 디자인이 냉각 효율에 미치는 영향을 관찰하였다. 가열온도 $200^{\circ}C$, 냉매 유동속도 150 ml/min의 경우에서 straight MC가 약 $44^{\circ}C$의 높은 냉각 전후의 온도 차를 보였다. 냉매의 흐름과 상 변화는 형광현미경으로 관찰하였으며, 냉각 전후의 온도 차는 적외선현미경을 이용하여 분석하였다.

• 대한전자공학회논문지TC
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• 제38권3호
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• pp.28-34
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• 2001

여파기의 스커트 특성을 향상시키기 위해서 동일한 주파수 특성을 지닌 독립적인 고온초전도 헤어핀 콤여파기를 효과적으로 cascade하는 방법을 제시하였다. Cascade 여파기는 공진기들을 마름모 형태로 배열한 구조로서 공진기 사이의 교차 결합을 최소화 할 수 있고 한정된 원형의 웨이퍼에 좋은 스커트 특성을 얻고자 할 때 효과적으로 쓰일 수 있다. 시뮬레이션 결과에 의하면 18 폴 cascade 여파기의 스커트 특성은 통과 대역 아래쪽과 위쪽에서 40dB/MHz 이상 감소하였다.