• 반도체디스플레이기술학회지
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• 제9권2호
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• pp.21-25
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• 2010

In response to the industrial needs for automated handling of very thin solar cell wafers, this paper presents the design concept for the individual wafer separation from the stacked wafers by utilizing continuous water jet. The experimental apparatus for automated wafer separation was constructed and it includes the water jet system and the microprocessor controlled wafer stack advancing system. Through a series of tests, the performance of the proposed design is quantified into the success rate of single wafer separation and the rapidity of processing wafer stack. Also, the inclination angle of wafer equipped cartridge and the water jet flowrate are found to be important parameters to be considered for process optimization. The proposed design shows the concept for fast and efficient processing of wafer separation and can be implemented in the automated manufacturing of silicon based solar cell wafers.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2006년도 ISMP 2006
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• pp.125-134
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• 2006

Process & mechanism $\blacklozenge$ The process consists from two steps which are laser processing step and separation steop. $\blacklozenge$ The wavelength of laser beam is transmissible wavelength for the wafer. However, inside of Si wafer is processed due to temperature dependence of optical absorption coefficient Advantage & Application $\blacklozenge$ Advantages are high speed dicing, no debris contaminants, completely dry process, etc. $\blacklozenge$ The cutting edges were fine, The lifetime and endurances did not degrade the device characteristics $\blacklozenge$ A separation of a wafer with DAF was introduced as an application for SiP

• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.301-306
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• 2017

Wire electrical discharge machining (WEDM) process was evaluated to slice Silicon (Si) for various applications. Specifically, various Si workpieces with various resistances, such as single and multi crystalline Si bricks and wafers were used. As conventional slicing processes, such as slurry-on or diamond-on wire slicing, are based on mechanical abrasions between Si and abrasive, there is a limitation to decrease the wafer thickness as well as kerf-loss. Especially, when the wafer thickness is less than $150{\mu}m$, wafer breakage increases dramatically during the slicing process. Single crystalline P-type Si bricks and wafers were successively sliced with considerable slicing speed regardless of its growth direction. Also, typical defects, such as microcracks, craters, microholes, and debris, were introduced when Si was sliced by electrical discharge. Also, it was found that defect type is also dependent on resistance of Si. Consequently, this study confirmed the feasibility of slicing single crystalline Si by WEDM.

• 한국재료학회지
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• 제29권11호
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• pp.697-702
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• 2019

In this study, using a wet chemical process, we evaluate the effectiveness of different solution concentrations in removing layers from a solar cell, which is necessary for recovery of high-purity silicon. A 4-step wet etching process is applied to a 6-inch back surface field(BSF) solar cell. The metal electrode is removed in the first and second steps of the process, and the anti-reflection coating(ARC) is removed in the third step. In the fourth step, high purity silicon is recovered by simultaneously removing the emitter and the BSF layer from the solar cell. It is confirmed by inductively coupled plasma mass spectroscopy(ICP-MS) and secondary ion mass spectroscopy(SIMS) analyses that the effectiveness of layer removal increases with increasing chemical concentrations. The purity of silicon recovered through the process, using the optimal concentration for each process, is analyzed using inductively coupled plasma atomic emission spectroscopy(ICP-AES). In addition, the silicon wafer is recovered through optimum etching conditions for silicon recovery, and the solar cell is remanufactured using this recovered silicon wafer. The efficiency of the remanufactured solar cell is very similar to that of a commercial wafer-based solar cell, and sufficient for use in the PV industry.

• 한국생산제조학회지
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• 제21권3호
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• pp.401-407
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• 2012

The recent manufacturing process in the thin wafers and flat panel necessitate new approaches to reduce handling fragile and surface-sensitive damage of components. This paper presents a new pneumatic levitation for non-contact handling of parts and substrates. This levitation can achieve non-contact handling by blowing air into an air pressure pick-up head with radial passages to generate a negative pressure region. Negative pressure is caused by the radial air flow by nozzle throat and through holes connecting to the bottom region. The numerical analysis deals with the levitational motion with different design factors. The dynamic motion is examined in terms of force balance(dynamic equilibrium) occurring to the flow field between two objects. The stable equilibrium position and the safe separation distance are determined by analyzing the local pressure distribution in the fluid motion. They make considerable design factors consisting the air pressure pick-up head. As a result, in case that the safe separation distance is beyond 0.7mm, the proposed pick-up head can levitate stably at the equilibrium position. Furthermore, it can provide little effect of torque, and obtain more wide picking region according to the head size.

• 반도체디스플레이기술학회지
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• 제16권3호
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• pp.41-46
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• 2017

This study aims to select suitable co-solvents and to obtain optimal process conditions in order to improve process efficiency and productivity through experimental results obtained under various experimental conditions for the etching and rinsing process using liquid carbon dioxide and supercritical carbon dioxide. Acetone was confirmed to be effective through basic experiments and used as the etching solution for MEMS-wafer etching in this study. In the case of using liquid carbon dioxide as the solvent and acetone as the etching solution, these two components were not mixed well and showed a phase separation. Liquid carbon dioxide in the lower layer interfered with contact between acetone and Mems-wafer during etching, and the results after rinsing and drying were not good. Based on the results obtained under various experimental conditions, the optimum process for treating MEMS-wafer using supercritical CO2 as the solvent, acetone as the etching solution, and methanol as the rinsing solution was set up, and MEMS-wafer without stiction can be obtained by continuous etching, rinsing and drying process. In addition, the amount of the etching solution (acetone) and the cleaning liquid (methanol) compared to the initial experimental values can be greatly reduced through optimization of process conditions.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.40-44
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• 2008

The interfacial adhesion energy between resist and a substrate is very important due to resist pull-off problems during separation of mold from a substrate in nanoimprint process. And effect of substrate surface roughness on interfacial adhesion energy is very important. In this paper, we have treated glass wafer surface using $CF_4$ gas for increase surface roughness and it has tested interfacial adhesion properties of UV resin/glass substrate interfaces by 4 point bending test. The interfacial adhesion energies by bare, 30, 60 and 90 sec surface treatments are 0.62, 1.4, 1.36 and 2 $J/m^2$, respectively. The test results showed quantitative comparisons of interfacial fracture energy (G) effect of glass wafer surface roughness.

• 자원리싸이클링
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• 제12권3호
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• pp.25-30
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• 2003

본 연구의 목적은 실리콘웨이퍼의 절단공정에서 발생한 폐슬러리와 폐망간전지에서 발생하는 흑연봉을 각각 규소 및 탄소의 출발물질로 사용하여 가스터빈 부품, 열교환기 등에 사용되는 탄화규소(SiC)를 합성하는 연구를 수행하였다. 실리콘웨이퍼의 절단공정에서 발생하는 폐슬러리로부터 비중차이에 의한 선별과 자력선별 등에 의해 정제된 규소와 탄화규소를 얻을 수 있었으며, 폐망간전지를 해체하여 얻은 탄소봉으로부터 수세와 분쇄를 통하여 탄소분말을 얻을 수 있었다. 탄화규소의 합성은 규소와 당량비의 탄소분발을 혼합하여 1$600^{\circ}C$이상의 온도에서 아르곤 분위기와 진공분위기 하에서 2시간 유지시켰을 때 이루어졌으며, 이때 합성된 탄화규소의 순도는 99% 이상이었다.

• 자원리싸이클링
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• 제16권1호
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• pp.59-67
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• 2007

실리콘 웨이퍼 제조공정 중 발생되는 초산, 질산 및 불산을 함유한 3성분계 폐혼산으로부터 개별산으로 분리하여 재활용할 목적으로 용매추출법을 적용하였다. 각 산의 분리를 위해 사용한 추출제로는 초산의 경우는 EHA(2-Ethylhexlalcohol)를 사용하였고, 질산과 불산의 경우에는 TBP(Tri-butylphosphate)를 사용하여 각 산의 분리과정에 대한 공정설계를 위한 기초 data를 얻고자 하였다. 3성분계 폐혼산에서 초산을 추출 분리하고 이후 추출여액 중 질산 및 불산을 순차적으로 추출 분리 할 수 있는 연속공정개발을 위하여 기초 실험 자료와 McCabe-Thiele해석을 통해 최적 투입유량비(O/A), 소요단수(Stage) 등을 결정하였다. 분석 결과 혼산으로부터 초산의 회수율은 90%이상 이었으며 초산 추출여액에서 질산의 회수율은 90%, 최종 추출잔류액에서 불산의 회수율은 67%이상 이었다.

• 마이크로전자및패키징학회지
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• 제16권4호
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• pp.1-4
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• 2009

본 연구에서는 실리콘 웨이퍼에 2중 다이싱 공정의 적용이 리드-온-칩 패키지로 조립되는 반도체 디바이스의 T.C. ($-65^{\circ}C$에서 $150^{\circ}C$까지의 온도변화에 지배되는 신뢰성 실험) 신뢰성에 어떠한 영향을 미치는 지를 보여준다. 기존 싱글 다이싱 공정은 웨이퍼에서 분리된 디바이스의 테두리 부위가 다이싱으로 인해 기계적으로 손상되는 결과를 보였으나, 2중 다이싱 공정은 분리된 디바이스의 테두리 부위가 거의 손상되지 않고 보존되는 것을 확인할 수 있었다. 이는 2중 다이싱의 경우 다이싱 동안 웨이퍼의 전면에 도입된 노치부위가 선택적으로 파손되면서 분리된 디바이스의 테두리 부위를 보호하기 때문으로 해석된다. 온도변화 실험을 통해 2중 다이싱 공정의 도입이 단일 다이싱 공정에 비해 T.C. 신뢰성에서도 대단히 좋은 결과를 보인다는 것을 확인할 수 있었다.