• Polymer(Korea)
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• v.31 no.3
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• pp.201-205
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• 2007

Biodegradable polymers such as polylactide, polyglycolide and poly (lactide- co-glycolide) (PLGA) have been extensively investigated because of easily controlled drug release rate, completely degradable materials without the toxic by-product, and good biocompatibility. But, according to the bulk erosion property of PLGA in vitro test, it had the disadvantage that first-order release reduced releasing amount slowly after excessive initial burst. In this study we used PLGA powder obtained through recrystallization to revise bulk erosion property of PLGA. The PLGA used in this study was prepared by vacuum drying method and to estimate release profiles of BCNU loaded PLGA wafer. We also evaluated the release profile of drug with the water soluble additive. It was found that the drug loaded PLGA recrystallized by vacuum drying method exhibited the initial burst and the constant rate of drug release compared to that prepared by a conventional method.

• Polymer(Korea)
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• v.29 no.5
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• pp.468-474
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• 2005

PLGA and PCL copolymers initiated by carbitol as drug carriers were synthesized by ring-opening polymerization of L-lactide (LA), glycolide (GA), and $\varepsilon-caprolactone(\varepsilon-CL)$. Implantable wafers were simply fabricated by direct compression method after physical mixing of copolymers and bovine serum albumin-fluorescein isothiocyanate (BSA-FITC) as a model protein drug. The release amounts of BSA-FITC from wafers were determined by fluorescence intensity using the fluorescence spectrophotometer. Also, the release behavior of BSA-FITC on wafers was controlled by adding the additives such as collagen, small intestinal submucosa (SIS), poly(vinyl pyrrolidone) (PVP), and poly(thylene glycol) (PEG). The wafer prepared by PLGA and PCL exhibited slow release within $10\%$ for 30 days. But, those prepared by a variety of additives exhibited the controlled BSA release patterns with a dependence on the additive contents. furthermore, the wafers containing natural materials such as collagen and SIS showed more zero-order release profile than that with synthetic materials such as PVP and PEG. It was confirmed that the release of BSA from implantable wafers could be easily controlled by adding natural additives.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.29-38
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• 1998

In this paper, we have induced a model for the growth and dissolution of oxygen precipitates which is generated during arbitrary thermal treatments or VLSI processes in CZ-grown silicon. Based on diffusion-limited growth law and detailed balance equilibrium theory, growth and dissolution rates are induced and inserted into a set of chemical rate equations and a Fokker-Planck equation. Then this is solved by numerical analysis. And because phenomenon at the silicon surface must be considered differently in various annealing conditions, in particular in $O_2$ ambient we have considered the growth model of SiO$_2$ at the surface of silicon wafer and the enhancement of oxygen solubility. By this method, oxygen depth profile and density distribution of oxygen precipitates are calculated more accurately than the other simulation results.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.80-90
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• 1994

The ultra shallow junction was formed by 2-step RTP. Phosphorus solid source(P$_{2}O_{5}$) was transfered on wafer surface during RTG(Rapid Thermal Glass Transfer) of which process condition was 80$0^{\circ}C$ and 60sec. The process temperature and time of the RTD(Rapid Thermal Diffusion) were 950~105$0^{\circ}C$ during 5~15sec respectively sheet resistances were measured as 175~320$\Omega$/m and junction depth and dopth and dopant surface concentration were measured as 0.075~0.18$\mu$m and 5${\times}10^{19}cm^{4}$ respectively. Ti-silicide was formed by 2-step RTA after 300$\AA$ Titanium was deposited. The 1st RTA (2nd RTA) was carried out at the temperature of $600^{\circ}C$(700~80$0^{\circ}C$) for 30 seconds (10~60 seconds) under N$_2$ ambient. Sheet resistances after 2nd RTA were measured as 46~63$\Omega$/D. Si/Ti component ratio was evaulated as 1.6~1.9 from Auger depth profile. Ti-Silicided n-p junction diode (pattern size : 400$\times$400$\mu$m) was fabricated under the RTD(the process was carried out at the temperature of 100$0^{\circ}C$ for 10seconds) and 2nd RTA(theprocess was carried out at the temperature of 750$^{\circ}C$ for 60 seconds). Leakage current was measured 1.8${\times}10^{7}A/mm^{2}$ at 5V reverse voltage. Whent the RTD process condition is at the temperature of 100$0^{\circ}C$ for 10seconds and the 2nd RTA process condition is at the temperature of 75$0^{\circ}C$ for 60 seconds leakage current was 29.15${\times}10^{9}A$(at 5V).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.171-175
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion - usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder tripe conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usual1y scraped. Figure 1 shows the typical shape of scratch damaged from diamond. We suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning, so new designed Flat stripper was introduced.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.10
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• pp.2187-2193
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• 2002

We present a novel method for 3D microfabrication with LIGA process that utilizes a deep X-ray mask in which a micro-actuator is integrated. The integrated micro-actuator oscillates the X-ray absorber, which is formed on the shuttle mass of the micro-actuator, during X-ray exposures to modify the absorbed dose profile in X-ray resist, typically PMMA. 3D PMMA microstructures according to the modulated dose contour are revealed after GG development. An X-ray mask with integrated comb drive actuator is fabricated using deep reactive ion etching, absorber electroplating, and bulk micromachining with silicon-on-insulator (SOI) wafer. 1mm $\times$ 1 mm, 20 $\mu$m thick silicon shuttle mass as a mask blank is supported by four 1 mm long suspension beams and is driven by the comb electrodes. A 10 $\mu$m thick, 50 $\mu$m line and spaced gold absorber pattern is electroplated on the shuttle mass before the release step. The fundamental frequency and amplitude are around 3.6 kHz and 20 $\mu$m, respectively, for a do bias of 100 V and an ac bias of 20 $V_{p-p}$ (peak-peak). Fabricated PMMA microstructure shows 15.4 $\mu$m deep, S-shaped cross section in the case of 1.6 kJ $cm^{-3}$ surface dose and GG development at 35$^{\circ}C$ for 40 minutes.

• Current Photovoltaic Research
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• v.9 no.3
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• pp.75-83
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• 2021

The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si₂O, Si₂O₃) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (V_oc) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900℃ declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiO_x/n⁺-poly-Si/SiN_x:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents J_o of this structure on polished surface is 1.3 fA/cm² and for textured silicon surfaces is 3.7 fA/cm² before printing the silver contacts. After printing the Ag contacts, the J_o of this structure increases to 50.7 fA/cm² on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.