• 한국정밀공학회지
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• 제26권5호
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• pp.150-156
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• 2009

The removal of tiny particles adhered to surfaces is one of the crucial prerequisite for a further increase in IC fabrication, large area displays and for the process in nanotechnology. Various cleaning techniques (wet chemical cleaning, scrubbing, pressurized jets and ultrasonic processes) currently used to clean critical surfaces are limited to removal of micrometer-sized particles. Therefore the removal of sub-micron sized particles from silicon wafers is of great interest. For this purpose various cleaning methods are currently under investigation. In this paper, we report on experiments on the cleaning effect of 100nm sized fluorescence particles on silicon wafer using the plasma shockwave occurred by femtosecond laser. The plasma shockwave is main effect of femtosecond laser cleaning to remove particles. The removal efficiency was dependent on the gap distance between laser focus and surface but in some case surface was damaged by excessive laser intensity. These experiments demonstrate the feasibility of femtosecond laser cleaning using 100nm size fluorescence particles on wafer.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.146-150
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• 2021

Plasma information based virtual metrology (PI-VM) that predicts wafer-to-wafer etch rate variation after wet cleaning of plasma facing parts was developed. As input parameters, plasma information (PI) variables such as electron temperature, fluorine density and hydrogen density were extracted from optical emission spectroscopy (OES) data for etch plasma. The PI-VM model was trained by stepwise variable selection method and multi-linear regression method. The expected etch rate by PI-VM showed high correlation coefficient with measured etch rate from SEM image analysis. The PI-VM model revealed that the root cause of etch rate variation after the wet cleaning was desorption of hydrogen from the cleaned parts as hydrogen combined with fluorine and decreased etchant density and etch rate.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.3168-3172
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• 2007

As the minimum feature size decreases, control of contamination by nanoparticles is getting more attention in semiconductor process. Cleaning technology which removes nanoparticles is essential to increase yield. A reference wafer on which particles with known size and number are deposited is needed to evaluate the cleaning process. We simulated particle trajectories in the chamber by using FLUENT and designed a particle deposition system which consists of scanning mobility particle sizer (SMPS) and deposition chamber. Charged monodisperse particles are generated using SMPS and deposited on the wafer by electrostatic force. The experimental results agreed with the simulation results well in terms of particle number and deposition area according to particle size, flow rate and deposition voltage.

• 반도체디스플레이기술학회지
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• 제6권4호
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• pp.49-52
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• 2007

As the minimum feature size decrease, control of contamination by nanoparticles is getting more attention in semiconductor process. Cleaning technology which removes nanoparticles is essential to increase yield. A reference wafer on which particles with known size and number are deposited is needed to evaluate the cleaning process. We simulated particle trajectories in the chamber by using FLUENT. Charged monodisperse particles are generated using SMPS (Scanning Mobility Particle Sizer) and deposited on the wafer by electrostatic force. The Experimental results agreed with the simulation results well. We calculate the particles loss in pipe flow theoretically and compare with the experimental results.

• 한국재료학회지
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• 제14권1호
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• pp.9-12
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• 2004

Metallic impurities, such as Fe, Cu, and Au, become generation and recombination centers for minority carriers when combined with oxide precipitates or silicon self-interstitial clusters. As these centers may cause leakage and discharge in silicon devices, their prevention through gettering of the metallic impurities is an important issue. In this article, key aspects of intrinsic gettering, such as oxygen control, wafer cleaning, device area denudation, and bulk oxygen precipitation are discussed, and a practical method of implementing intrinsic gettering is outlined.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1089-1092
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• 2003

This paper has been studied on wafer cleaning and photoresist striping in semiconductor fabrication processes using ozone solved deionized water. In this work, we have developed high concentration ozone generating system and high contact ratio ozone solving system to get high efficiency DIO$_3$. Through this study, we obtained 11% ozone gas concentration, 99.5% of ozone efficiency and 51% of solubility in deionized water.

• 한국멀티미디어학회논문지
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• 제14권5호
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• pp.632-641
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• 2011

본 논문에서는 반도체 생산 공정 중 클리닝 공정 설비에서, 웨이퍼의 장착 위치를 인식하는 영상 인식 시스템을 제안한다. 제안한 시스템은 웨이퍼의 위치 이탈에 따른 위치오차 발생 시 이를 클리닝 설비에 전달하여, 웨이퍼 클리닝 장비의 파손을 방지하여 시스템의 신뢰성과 경제성을 높이기 위한 것이다. 제안한 방법은 기존의 시스템에서 체스보드 형태의 캘리브레이터를 사용시 발생되는 오차를 줄이기 위하여 방사형 캘리브레이터를 디자인 및 제작하고 이의 매핑합수를 구하는데 있다. 제안한 시스템은 고 신뢰성과 고 정밀의 위치인식 알고리즘을 사용하여, 효율적으로 웨이퍼 인라인 공정에 설치함을 목표로 하며 실험결과 기존의 방법에 비해 충분한 허용 기준 내에서 오차를 검출해내는 좋은 성능을 보여준다.

• 한국재료학회지
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• 제24권8호
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• pp.429-433
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• 2014

As the fabrication technology used in FPDs(flat-panel displays) advances, the size of these panels is increasing and the pattern size is decreasing to the um range. Accordingly, a cleaning process during the FPD fabrication process is becoming more important to prevent yield reductions. The purpose of this study is to develop a FPD cleaning system and a cleaning process using a two-phase flow. The FPD cleaning system consists of two parts, one being a cleaning part which includes a two-phase flow nozzle, and the other being a drying part which includes an air-knife and a halogen lamp. To evaluate the particle removal efficiency by means of two-phase flow cleaning, silica particles $1.5{\mu}m$ in size were contaminated onto a six-inch silicon wafer and a four-inch glass wafer. We conducted cleaning processes under various conditions, i.e., DI water and nitrogen gas at different pressures, using a two-phase-flow nozzle with a gap distance between the nozzle and the substrate. The drying efficiency was also tested using the air-knife with a change in the gap distance between the air-knife and the substrate to remove the DI water which remained on the substrate after the two-phase-flow cleaning process. We obtained high efficiency in terms of particle removal as well as good drying efficiency through the optimized conditions of the two-phase-flow cleaning and air-knife processes.

• 반도체디스플레이기술학회지
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• 제4권4호
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• pp.13-17
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• 2005

The behavior of ozone in $NH_4OH$ was investigated to evaluate the solution as a cleaning chemical of the silicon wafer. The solubility of ozone in DI(Deionized) water increased as the oxygen flow-rate decreased and ozone generator power increased. Ozone in DI water showed solubility of 100 ppm or higher at room temperature. Ozone concentration was stabilized at the range of ${\pm}2ppm$ by controlling oxygen flow rate and ozone generator power. On the contrary, the solubility of ozone in $NH_4OH$ was very low and strongly depended on the concentration of $NH_4OH$ and pH. The redox potential of ozone was saturated within 10 minutes in DI water and decreased rapidly with the addition of $NH_4OH$. The behavior of ozone in $NH_4OH$ is well explained by redox potential calculation.

• 한국정보처리학회논문지
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• 제7권1호
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• pp.115-125
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• 2000

본 논문에서는 반도체 웨이퍼 세정 장비를 위한 모니터링 시스템의 기본 요소와 이를 기반으로 모니터링 시스템 모델을 제시한다. 기본 요소는 모니터링 시스템에서 요구되는 필수적인 기능으로써 제어 시스템과의 통신, 사용자 인터페이스, 원격 감시 시스템과의 통신, 감시 데이터 관리, 테스크간 통신으로 구성된다. 기본 요소들의 기능과 기본 요소들 간의 관계를 정의하여 독립된 테스크로 설계한다. 제시한 모델의 타당성을 평가하기 위하여 Windows NT에서 Visual C++를 사용하여 기본 요소들을 구현하여 반도체 웨이퍼 세정 장비의 모니터링 시스템에 적용해 보았다.