Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Solubility Behavior of Ozone for Silicon Wafer Cleaning

실리콘 웨이퍼 세정을 위한 오존의 거동에 관한 연구

  • Lee Gun-Ho (Research and Development Division, Siltron Co., Ltd.) ;
  • Kim In-Jung (Research and Development Division, Siltron Co., Ltd.) ;
  • Bae So-Ik (Research and Development Division, Siltron Co., Ltd.)
  • Published : 2005.12.01
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Abstract

The behavior of ozone in $NH_4OH$ was investigated to evaluate the solution as a cleaning chemical of the silicon wafer. The solubility of ozone in DI(Deionized) water increased as the oxygen flow-rate decreased and ozone generator power increased. Ozone in DI water showed solubility of 100 ppm or higher at room temperature. Ozone concentration was stabilized at the range of ${\pm}2ppm$ by controlling oxygen flow rate and ozone generator power. On the contrary, the solubility of ozone in $NH_4OH$ was very low and strongly depended on the concentration of $NH_4OH$ and pH. The redox potential of ozone was saturated within 10 minutes in DI water and decreased rapidly with the addition of $NH_4OH$. The behavior of ozone in $NH_4OH$ is well explained by redox potential calculation.

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