• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.10
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• pp.1240-1247
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• 2019

In this paper, we designed a four-band antenna that can be applied to WLAN and WiMAX systems by designing a microstrip feeding structure, four branch lines and a slit on the ground plane. The proposed antenna is designed with a size of 16.0 mm (W1) × 48.0 mm (L8) on a dielectric substrate of 18.0 mm (W) × 50.0 mm (L) × 1.0 mm(h). and a slit of 2.9 mm (W7) × 4.0 mm (L7) is inserted into the ground plane of 18.0 mm (W) × 18.7 mm (L6). Based on -10 dB production and measurement results, it obtained 60.8 MHz (8,730~9,338 MHz), 310 MHz (2.33~2.64 GHz) in the 2.4 GHz band, 420MHz (3.39~3.81 GHz) in the 3.4 GHz band, and 2,070 MHz (4.62~6.69 GHz) in the 5.0 GHz. In addition, the gain and radiation pattern characteristics of the quadrant band are measured from the measurement results anechoic chamber.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.3-6
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• 2008

In this paper, we propose the folded PIFA with its made an alteration to a factor of resonance for L-slot PIFA. Proposed antenna maintain diminished size patch and improve each bandwidth of GSM(0.88$\sim$-0.96 GHz) and W-CDMA(1.92$\sim$2,17 GHz) for miniaturized repeater. The non-slot step folded PIFA's structure that design of essence was general L-slot PIFA for dual-band. It has no U-slot, multi band and the another slot. The parameters of proposed antenna were optimized for dual-band and compact size by folded singleness patch. Proposed antenna by using folded singleness patch take satisfaction main point, bandwidth of GSM and W-CDMA, compact patch size($39{\times}21{\times}13mm^3$). The antenna was designed by FDTD simulation tool and it was made from result of simulation. Measured data shown that the proposed non-slot step folded PIFA was strong possibility.

• Journal of IKEEE
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• v.23 no.1
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• pp.181-187
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• 2019

In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial $0.25{\mu}m$ GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of $200{\mu}s$ and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are $3.5mm{\times}2.3mm$, generating the output power density of $2.71W/mm^2$. Its power added efficiency (PAE) is 42.6-50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• The Bulletin of The Korean Astronomical Society
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• v.42 no.2
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• pp.59.2-59.2
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• 2017

The Submillimeter Array (SMA) has provided forefront capabilities for high spatial and spectral resolution observations at submillimeter wavelengths from its excellent site on Mauna Kea, Hawaii since 2004. The SMA has continuously enhanced its capability. It is now equipped with two receivers in the 1.3 mm band (Rx230/Rx240) and two in the 0.85 mm band (Rx345/Rx400). The total bandwidth available is 8+8 GHz (per receiver) in the dual band or polarization mode. To maintain a leading role in the ALMA era, the SMA project is now upgrading its receivers, IF signal transport and correlator system. The new wideband SMA - the wSMA - will provide the instantaneous coverage of 56 GHz. In this presentation, I will introduce the latest status of the SMA, upgrade plan to the w-SMA, the possible science cases with the w-SMA, and the roles of the w-SMA in the ALMA era.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.4
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• pp.129-133
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• 2020

In this paper, a temperature compensation circuit is presented in order to mitigate gain variability due to temperature in the W-band low-noise amplifier (LNA). The proposed cascode temperature compensation bias circuit automatically controls gate bias voltages of the common-source LNA in order to suppress variations of small-signal gain. The designed circuit was realized in a 100-nm GaAs pHEMT process. The simulated voltage gain of W-band LNA including the proposed bias circuit is >20 dB with gain variability less than ±0.8 dB in the range of temperatures between -35 to 71℃. We expect that the proposed circuit contributes to millimeter-wave receivers for stable performances in radar applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.7
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• pp.1249-1255
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• 2008

1530nm band has been studied as pump wavelength for long-wavelength-band erbium-doped fiber amplifier (L-band EDFA). The pump source is built using a tunable light source and cascaded conventional-band (C-band) EDFA. The L-band EDFA uses a forward pumping scheme. Within the 1530nm band, 1545nm pump demonstrates 0.45dB/mW gain coefficient, which is twice better than that of conventional 1480nm pumped EDFA. The noise figure of 1530nm pump is at worst 6.36dB, which is 0.75dB higher than that of 1480nm pumped EDFA. Such high gain coefficient indicates that the L-band EDFA consumes low power.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.11
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• pp.2697-2702
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• 2014

In this paper, we demonstrated a Ku-band 2W MMIC power amplifier for satellite communication applications. The device technology used relies on $0.25{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT) of Wireless Information Networking (WIN) Semiconductor foundry. The 2W MMIC power amplifier has gain of over 29 dB and saturation output power of over 33.4 dBm in the frequency range of 13.75 ~ 14.5 GHz. Power added efficiency (PAE) is a 29 %. To our knowledge, this is the highest power added efficiency reported for any commercial GaAs-based 2W MMIC power amplifier in the Ku-band.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.853-862
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• 2019

In this paper, we designed a 4.5kW X-band SSPA transmitter to replace the TWTA search radar transmitter with low MTBF and high maintenance cost. The transmitter is designed for the performance of over 520W average transmission output and 4.0kW maximum transmission output. In particular, by implementing a graceful degradation, it is designed to maintain better performance than conventional TWTA transmitter up to 40% (13 assembly modules) failure level of 200W power amplifier assembly. Through an experiment on the effective range of X-band, the performance of proposed transmitter verified the values of the maximum transmission output 6.1kW, spurious output 69.16dBc, RF pulse rising time 15.2ns and RF pulse falling time 16.3ns. The experiment confirmed the change of output power according to the graceful degradation due to fault injection.

• Journal of IKEEE
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• v.24 no.4
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• pp.1093-1097
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• 2020

This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking (WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2~23.1 dB and saturated output power of 34.8~35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturated output power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6~37.83% and the chip dimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in a variety of Ku-band satellite communication applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.3
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• pp.368-377
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• 1999

In this paper, the wide-band CDMA transmitter for 2 GHz band is designed and implemented. The CC-OQPSK implemented as ASIC has better spectral and power efficiency than the conventional QPSK system because it has constant envelope characteristics. Good harmonics rejection characteristics and gain of 20 dB are shown on the intermediate frequency stage using double-conversion scheme. The output power of two-stage RF amplifier is +2l.14 dBm in 1.9 GHz band. It is confirmed that the electrical characteristics of the transmitter satisfy with required the specification of the wide-band CDMA transmitter for 2 GHz band.