• 한국표면공학회지
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• 제36권1호
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• pp.9-13
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• 2003

Plasma polymerized organic thin films were deposited on Si(100), glass and metal substrates at $25∼100 ^{\circ}C$ using thiophene and toluene precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30∼100 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency ($P_{k}$), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest $P_{k}$ value of plasma polymerized toluene film (85.27% at 70 W) was higher than that of the plasma polymerized thiophene film (65.17% at 100 W), indicating inhibition of oxygen reduction. The densely packed and tightly interconnected toluene film could act as an efficient barrier layer to the diffusion of molecular oxygen. The result of contact angle measurement showed that the plasma polymerized toluene films have more hydrophobic surface than those of the plasma polymerized thiophene films.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권12호
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• pp.576-580
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• 2006

The $(Sr_{0.85}Ca_{0.15})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode $(Pt/TiN/SiO_2/Si)$ using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film as obtained by annealing at $600^{\circ}C$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권1호
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• pp.13-17
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• 2005

The Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃/(Ba/sub 0.6/Sr/sub 0.4/)TiO₃[PZT/BST] heterolayered thin films were deposited on Pt/Ti/SiO₂/Si substrates by using the RF sputtering method with different RF power. The PZT/BST heterolayered thin films had the tetragonal structure of the PZT phase and BST phase. Increasing the RF power. the intensity of the PZT (100), (110) peaks and BST (111) peaks were decreased and the intensity of the BST (100), (110) peaks were increased. The thickness ratio of the top layered BST thin film and the bottom layered PZT thin film was 2 to1. The atomic concentration of the Ba, Sr, Pb. Zr, Ti atoms were constant in the PZT thin films and BST thin films, respectively. The Pt atom was diffused to the PZT region in the PZT/BST heterolayered thin films deposited at condition of 60[W] RF power. Increasing the frequency, dielectric constant and loss of the PZT/BST heterolayered thin films were decreased. The dielectric constant and loss of the PZT/BST heterolayered thin films deposited with RF power of 90[W] were 406 and 3%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.566-569
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at $600[^{\circ}C]$. The temperature properties of the dielectric loss have a value within 0.02 in temperature ranges of $-80{\sim}+90[^{\circ}C]$. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].

• 한국재료학회지
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• 제4권5호
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• pp.535-540
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• 1994

Thin film magnet was fabricated by radio frequency magnetron sputtering using $Nd_13/(Fe.Co)_{70}B_{17}$ alloy target and magnetic properties were investigated according to sputtering conditions from the metallurgical point of view. we could obtain the best preferred orientation of $Nd_2Fe_{14}B$ phase at substrate temperatures between $450^{\circ}C$ and $460^{\circ}C$ with the input power 150W, and thin films had the anisotropic magnetic properties. But, as the thickness of thin film increased, the c-axis orientation gradually tended to be disordered and magnetic properties also become isotropic. Just like Nd-Fe-B meltspun ribbon, the microstructure of thin film magnet was consisted of very find cell shaped $Nd_2Fe_{14}B$ phase and the second phase along grain boundary. While, domain structure showed maze patterns whose magnetic easy axis was was perpendicular to film plane of thin film. It was concluded from these results that the perpendicualr anisotropy in magnetization was attributed to the perpendicular alignment of very find $Nd_2Fe_{14}B$ grains in thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.998-1001
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• 2004

ZnO, $SnO_2$ 타겟 각각의 RF 파워를 50 W, 38 W로 고정시킨 후 combinatorial RF magnetron sputtering법을 사용하여 기판 위치에 따라서 조성 구배를 주어 여러 가지 조성의 Zn-Sn-O(ZTO) 박막을 제작하였다. 시편의 열처리에 따른 물성 변화를 분석하기 위해 Rapid Thermal Annealer(RTA)을 이용하여 450, $650{^\circ}C$의 온도 및 $10^{-2}$ Ton의 진공 분위기에서 각각 1 시간 동안 열처리하였다. XRD 분석 결과 상온에서 제작된 ZTO 박막은 Sn 18 at%의 조성을 갖는 시편을 제외하고 모두 비정질상으로 나타났다. $450^{\circ}C$에서 열처리 후 구조적인 변화는 보이지 않았으나, 캐리어 농도와 이동도는 증가하였으며 Sn 54 at%의 조성에서 최고 $25.4cm^2/Vsec$의 전자 이동도를 나타내었다. $26{\leq}Sn$ $at%{\leq}65$의 조성 범위를 갖는 박막은 가시광 영역에서 80 % 이상의 투과도를 가졌으며 $650^{\circ}C$에서 결정화가 되면서 투과도가 증가하였다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.63-63
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• 2009

• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.23-27
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• 2004

본 연구에서는 RF-Magnetron Sputtering 장치를 이용하여 $Al_xTa_{1-x} (x=0.0{\~}1.0)$ 합금박막을 성장하였고, XRD, AFM, 4탐침법 등을 사용하여 시료의 결정질과 표면형상, 그리고 전기적 특성을 분석하였다. Al 조성을 변화시켜서 Al-Ta 합금박막을 증착하고, 그에 따라 얻어진 결과를 토대로 하여 박막 두께별 ,박막의 폭 별로 합금박막을 성장하였다. 또한 heat controller를 사용하여 시료의 발열특성을 분석하였다. 본 연구의 결과 Al-Ta 합금박막은 Al 조성 $x=6.63at\%$에서 가장 높은 전기저항이 나타났고, 박막두께가 얇아지거나 패터닝된 박막의 폭이 좁을수록 더욱 높은 전기저항이 나타났다. 발열온도는 전기저항의 변화추이와 동일한 양상을 보였고, Al 조성 $x=6.63\%$, 박막두께 d=500 nm, 박막폭 w=1.5 mm에서 가장 높은 발열온도 ($400^{\circ}C$)와 출력 ($12.6W/cm^2$)을 나타냈다.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.863-867
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• 2008

In this paper, to increase the light current efficiency of photodiode, we fabricated aluminum-doped zinc oxide(AZO) thin films by RF magnetron sputtering. AZO thin films were deposited at low temperature of 100 $^{\circ}C$ and different RF powers of 50, 100, 150 and 200 W due to selective process technology. Then the AZO thin films were annealed at 400 $^{\circ}C$ for 1 hr in vacuum ambient to increase crystalline. The lowest resistivity of 1.35 ${\times}$ $10^{-3}$ ${\Omega}cm$ and a high transmittance over 90 % were obtained under the conditions of 3 mTorr, 100 'c and 150 W. The optimized AZO thin films were deposited as anti-reflection coating on PN junction of silicon photodiode. It was confirmed by the result of $V_r-I_{ph}$ curve that the efficiency of photodiode with AZO thin film was enhanced 17 % more than commercial photodiode.

• 한국재료학회지
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• 제10권1호
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• pp.97-106
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• 2000

본 연구에서는 NaH$_2$PO$_2$$H_2O$ (차아인산이수소나트륨)을 환원제로 사용한 무전해 도금법을 이용하여 corning glass 2948 유리기판 위에 Co-W-P 도금층을 제조할 때, pH 및 온도에 따른 석출속도, 합금조성 및 미세구조와 자기적 특성을 고찰하였다. 무전해 Co-P 도금층은 석출전위에 따라 산성에서 석출되지 않고 알칼리성에서만 환원석출반응에 의해 형성되었으며, 석출속도는 pH와 온도가 증가할수록 상승하여 pH 10, 온도 8$0^{\circ}C$일 때 가장 우수하였다. 자기적 특성은 pH 9, 온도 7$0^{\circ}C$일 때 보자력 870Oe, 각형비 0.78로 가장 우수하였으며, 이때, Co-P 도금층의 인(P)의 함량은 2.54%, 두께는 0.216$\mu\textrm{m}$였다. 결정배향은 $\beta$-Co의 fcc는 발견되지 않았고, $\alpha$-Co의 hcp(1010), (0002), (1011) 방향의 결정배향을 확인할 수 있었으며, (1010), (1011) 방향이 우선 배향한 것으로 보아 수평자기벡터를 형성함을 확인할 수 있었다. 무전해 Co-W-P 도금층의 경우는 자기적 특성에서 보자력은 500Oe, 각형비는 0.6 정도의 경향을 보였지만, 결정배향에 있어서는 $\alpha$-Co (0002) 방향으로 우선 배향하여 수직자화벡터를 형성함을 확인할 수 있었으며, 합금조성에 있어 인(P)의 함량은 0.8$\pm$0.2%로 일정하였고, W의 석출량은 $Na_2$WO$_4$의 농도가 증가할수록 증가하여 0.1mol/L일 때 20%이였다. 수소가스를 이용한 환원분위기에서 10$0^{\circ}C$간격으로 1시간씩 40$0^{\circ}C$까지 열처리에 따른 자기적 특성과 미세구조의 변화를 확인하여 본 결과 Co-W-P는 열처리에 따라 표면의 평활도는 향상되었지만, 자기적 특성과 미세구조에는 아무런 변화가 없었다.