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The Structural and Dielectric Properties of the PZT/BST Heterolayered Thin Films with RF Power  

Lee Sang-Chul (광운대학 전자재료공학과)
Nam Sung-Pil (광운대학 전자재료공학과)
Lee Sung-Gap (서남대학 전기전자공학과)
Lee Young-Hie (광운대학 전자재료공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.54, no.1, 2005 , pp. 13-17 More about this Journal
Abstract
The Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃/(Ba/sub 0.6/Sr/sub 0.4/)TiO₃[PZT/BST] heterolayered thin films were deposited on Pt/Ti/SiO₂/Si substrates by using the RF sputtering method with different RF power. The PZT/BST heterolayered thin films had the tetragonal structure of the PZT phase and BST phase. Increasing the RF power. the intensity of the PZT (100), (110) peaks and BST (111) peaks were decreased and the intensity of the BST (100), (110) peaks were increased. The thickness ratio of the top layered BST thin film and the bottom layered PZT thin film was 2 to1. The atomic concentration of the Ba, Sr, Pb. Zr, Ti atoms were constant in the PZT thin films and BST thin films, respectively. The Pt atom was diffused to the PZT region in the PZT/BST heterolayered thin films deposited at condition of 60[W] RF power. Increasing the frequency, dielectric constant and loss of the PZT/BST heterolayered thin films were decreased. The dielectric constant and loss of the PZT/BST heterolayered thin films deposited with RF power of 90[W] were 406 and 3%, respectively.
Keywords
PZT/BST Heterolayered Thin Films; RF Sputtering Method; RF Power;
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Times Cited By KSCI : 1  (Citation Analysis)
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1 Can Wang, 'Dielectric properties of $Pb(Zr20Ti80)O_3/Pb(Zr80Ti20)O_3$ multilayered thin films prepared by rf magnetron sputtering', Appl. Phys. Lett., Vol. 82 No. 17, pp.2880-2882, 2003   DOI   ScienceOn
2 M. Azuma et al., 'Electrical characteristics of High Dielectric Constant Materials for Integrated Ferro-electrics', Proc. 4th ISIF, pp. 109-117, 1992
3 L. Baginsky and E. G. Kostov, 'Information Writing Mechanism in Thin Films MFIS-Structures, Ferro-electrics', Vol. 143, pp. 239-250, 1993
4 Yoichi Miyasaka, 'High Dielectric $(Ba,Sr)TiO_3$ Thin Films for ULSI DRAM Application', Extended Abstracts of 1995 International Conference on Solid State Device and Materials, Osaka, pp. 506-508, 1995
5 Weiguo Liu, Jong Soo Ko and Weiguang Zhu, 'Preparation and porperties of multilayer $Pb(Zr,Ti)O_3/PbTiO_3$ thin films for pyroelectric application', Thin Solid Films, Vol. 371, Issues 1-2, pp. 254-258, 2000   DOI   ScienceOn
6 I. Kanno, S. Hayashi, R. Takayama, H. Sakakima and T. Hirao, 'Prossing and characterization of ferroelectric thin films by multi-ion-beam sputtering', Nuclear Instruments and Methods in Physics Research Section B, Vol 112, Issues 1-4, pp. 125-128, 1996   DOI   ScienceOn
7 Hedekazu Doi, Tsutomu Atsukil, 'Influence of Buffer Layers and Excess Pb/Zr+Ti Ratios on Fatigue Characteristics of Sol-Gel-Derived $Pb(Zr, Ti)O_3$ Thin Films', Jpn. J. Appl. Phys. Vol.34, pp. 5105-5112, 1995   DOI
8 Katsuhiro Aoki, Yukio Fukuda, Ken Numata and Akitoshi Bishimura, 'Electrode Dependences of Switching Endurance Properties of Lead-Zirconate-Titanate Thin-Film Capacitors', Jpn. j. Appl. Phys. Vol. 35, pp. 2210-2215, 1996   DOI
9 L. Li and X. M. Chen, 'Ferroelectric/antiferroelectric layered ceramics in $PbZrO3-PbTiO_3$ system', Materials Science and Engineering B, Vol. 108, Issue 3, pp. 200-205, 2004   DOI
10 F. Le Marrec, R. Farhi, B. Dkhil, J. Chevreul and M. G. Karkuta, 'Absence of a PbTiO3 phase transition in $PbTiO_3/BaTiO_3$ superlattices', Journal of the European Ceramic society, Vol. 21, Issues 10-11, pp. 1615-1618, 2000   DOI
11 Newnham, R. E., 'Ferroelectric Materials and Their Applications By Ynhuan Xu', J. A. Chem. Soc., Vol. 115 No.23, pp. 11061, 1993